Inventor · disambiguated record
Gilheyun Choi
Also filed as: CHOI GILHEYUN
23 granted patents·10 pending applications·94 citations·filing 2007–2015
94Inventor score
Top patents by PatentIndex Score
33 records- 0190US9070748B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 30, 2015·10 cites·14 claims
- 0288US8927426B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 6, 2015·10 cites·14 claims
- 0387US8941216B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 27, 2015·7 cites·7 claims
- 0485US9076849B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·6 cites·12 claims
- 0583US9171753B2Semiconductor devices having conductive via structures and methods for fabricating the sameLEE HO-JIN·Filed 2013·Granted Oct 27, 2015·7 cites·19 claims
- 0682US9153559B2Semiconductor devices including through silicon via electrodes and methods of fabricating the sameLEE DOSUN·Filed 2012·Granted Oct 6, 2015·8 cites·19 claims
- 0780US9543250B2Semiconductor devices including through-silicon viaSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 10, 2017·3 cites·5 claims
- 0880US9214374B2Semiconductor devices including stress relief structuresLEE DOSUN·Filed 2012·Granted Dec 15, 2015·10 cites·26 claims
- 0980US9171781B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 27, 2015·5 cites·9 claims
- 1078US9153489B2Microelectronic devices having conductive through via electrodes insulated by gap regionsLEE HO-JIN·Filed 2012·Granted Oct 6, 2015·5 cites·20 claims
- 1177US8564139B2Semiconductor devices including protected barrier layersLEE HO-JIN·Filed 2012·Granted Oct 22, 2013·4 cites·18 claims
- 1276US8258058B2Methods of forming metal patterns in openings in semiconductor devicesMATSUDA TSUKASA·Filed 2012·Granted Sep 4, 2012·3 cites·5 claims
- 1371US9543200B2Methods for fabricating semiconductor devices having through electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·15 claims
- 1471US8872351B2Semiconductor devices having through electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 28, 2014·3 cites·6 claims
- 1569US8691692B2Semiconductor chips and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 8, 2014·2 cites·9 claims
- 1669US8551860B2Semiconductor devices having through electrodes and methods of fabricating the sameBANG SUKCHUL·Filed 2012·Granted Oct 8, 2013·3 cites·15 claims
- 1763US8710650B2Semiconductor devices having through electrodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 29, 2014·1 cites·11 claims
- 1862US9053948B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 9, 2015·1 cites·14 claims
- 1962US8319348B2Metal interconnect of semiconductor deviceLEE JONGMYEONG·Filed 2010·Granted Nov 27, 2012·3 cites·18 claims
- 2054US9362172B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 7, 2016·0 cites·16 claims
- 2148US8148261B2Methods of forming metal patterns in openings in semiconductor devicesMATSUDA TSUKASA·Filed 2010·Granted Apr 3, 2012·0 cites·18 claims
- 2246US2009026618A1Semiconductor device including interlayer interconnecting structures and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2346US2008296660A1Low resistivity conductive structures, devices and systems including same, and methods forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2445US9142489B2Semiconductor devices including a non-planar conductive pattern, and methods of forming semiconductor devices including a non-planar conductive patternSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·0 cites·19 claims
- 2544US9583373B2Wafer carrier having cavitySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 28, 2017·0 cites·13 claims
- 2644US2015243637A1Semiconductor devices having through-vias and methods for fabricating the sameKANG PIL-KYU·Filed 2015·Application pending·0 cites
- 2742US2012119376A1Semiconductor chips and methods of forming the sameLIM DONG-CHAN·Filed 2011·Application pending·0 cites
- 2840US2012039564A1Photoelectric Integrated Circuit Devices And Methods Of Forming The SameKANG PIL-KYU·Filed 2011·Application pending·0 cites
- 2939US2013020719A1Microelectronic devices including through silicon via structures having porous layersSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 3038US2013175693A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 3133US2015343495A1Apparatus and methods for treating substratesKIM KYOUNGSEOB·Filed 2015·Application pending·0 cites
- 3229US2016064193A1Semiconductor manufacturing apparatus and method of manufacturing semiconductor device using the sameKIM HOGON·Filed 2015·Application pending·0 cites
- 3329US2011195569A1Semiconductor Device and Method for Forming the SameMOON KWANGJIN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →