Semiconductor chips and methods of forming the same

Abstract

Provided are a semiconductor chip and a method of manufacturing the same. The semiconductor chip includes a substrate having a first side and a second side facing each other, and a through electrode being disposed in a hole penetrating the substrate, wherein an opening surrounded by the through electrode is disposed in the hole, wherein the opening comprises a first end adjacent to the first side of the substrate and a second end adjacent to the second side of the substrate

1 . A semiconductor chip comprising:
 a substrate having a first side and a second side facing each other; and   a through electrode disposed in a hole penetrating the substrate,   wherein the through electrode surrounds an opening disposed in the hole, wherein the opening comprises a first end adjacent to the first side of the substrate and a second end adjacent to the second side of the substrate, and wherein the first and second ends of the opening are covered by the through electrode.   
     
     
         2 . The semiconductor chip of  claim 1 , wherein the through electrode comprises a first conductive pattern and a second conductive pattern,
 wherein the hole comprises a first end adjacent to the first side of the substrate and a second end adjacent to the second side of the substrate, wherein the first conductive pattern comprises a portion closing the second end of the hole, the second conductive pattern closes the first end of the hole, and wherein the opening is completely surrounded by the first and second conductive patterns.   
     
     
         3 . The semiconductor chip of  claim 2 , wherein a portion of a sidewall of the first conductive pattern adjacent to the first side of the substrate comprises an overhang. 
     
     
         4 . The semiconductor chip of  claim 2 , wherein an inside surface of the first conductive pattern is adjacent to the opening and wherein the second conductive pattern contacts the inside surface of the first conductive pattern. 
     
     
         5 . The semiconductor chip of  claim 2 , wherein the second conductive pattern comprises physical vapor deposition conductive material. 
     
     
         6 . The semiconductor chip of  claim 2 , wherein the first and second conductive patterns comprise the same conductive material. 
     
     
         7 .- 15 . (canceled) 
     
     
         16 . A semiconductor device comprising:
 a substrate;   a through electrode penetrating the substrate; and   an opening in the through electrode, wherein the opening is surrounded on all sides of the opening by the through electrode.   
     
     
         17 . The semiconductor device of  claim 16 , wherein the through electrode comprises a first conductive pattern and a second conductive pattern. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the through electrode is formed in a hole in the substrate, and the first conductive pattern is positioned between the second conductive pattern and side surfaces of the hole. 
     
     
         19 . The semiconductor device of  claim 17 , wherein the second conductive pattern surrounds all sides of the opening, and the first conductive pattern surrounds at least three sides of the second conductive pattern. 
     
     
         20 . The semiconductor device of  claim 17 , wherein the second conductive pattern partially fills the opening. 
     
     
         21 . The semiconductor device of  claim 17 , wherein the first conductive pattern seals a first end of the opening, and the second conductive pattern seals a second end of the opening.