Inventor · disambiguated record
Gin-Chen Huang
Also filed as: HUANG GIN-CHEN
29 granted patents·3 pending applications·1,914 citations·filing 2011–2021
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20TAIWAN SEMICONDUCTOR MFG5HUANG GIN-CHEN3LU TSUO-WEN2LIN CHIEN-LIANG1
Top patents by PatentIndex Score
32 records- 0198US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
- 0298US9093530B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·1.3k cites·20 claims
- 0396US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 0492US10269649B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
- 0590US10651091B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·3 cites·20 claims
- 0690US9941367B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 0788US9620628B1Methods of forming contact featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·5 cites·20 claims
- 0888US9105661B2Fin field effect transistor gate oxideHUANG GIN-CHEN·Filed 2011·Granted Aug 11, 2015·12 cites·9 claims
- 0988US8921136B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·7 cites·20 claims
- 1087US9780214B2Semiconductor device including Fin- FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·6 cites·18 claims
- 1185US9870956B2FinFETs with nitride liners and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·4 cites·19 claims
- 1282US11694889B2Chemical mechanical polishing cleaning system with temperature control for defect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 1378US10333001B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·1 cites·20 claims
- 1476US11854898B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 1575US9929272B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·1 cites·20 claims
- 1675US9006802B2Semiconductor device manufacturing methods and methods of forming insulating material layersHUANG GIN-CHEN·Filed 2011·Granted Apr 14, 2015·3 cites·20 claims
- 1774US11362000B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 1872US9443964B2Fin structure of FinFetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·1 cites·20 claims
- 1968US9882029B2Semiconductor device including Fin-FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 2068US9368446B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 14, 2016·1 cites·20 claims
- 2165US8940597B2In-situ metal gate recess process for self-aligned contact applicationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
- 2258US11718812B2Post-CMP cleaning composition for germanium-containing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2357US10269935B2Semiconductor device including Fin-PET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 2457US10115597B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·0 cites·20 claims
- 2556US9559182B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 2652US9607826B2Semiconductor device manufacturing methods and methods of forming insulating material layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·0 cites·20 claims
- 2750US2014374838A1FinFETs with Nitride Liners and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 2841US8853052B2Method of manufacturing a semiconductor deviceHUANG GIN-CHEN·Filed 2011·Granted Oct 7, 2014·0 cites·19 claims
- 2941US8614152B2Gate structure and a method for forming the sameLIN CHIEN-LIANG·Filed 2011·Granted Dec 24, 2013·0 cites·9 claims
- 3040US8501634B2Method for fabricating gate structureWang shao-wei·Filed 2011·Granted Aug 6, 2013·0 cites·17 claims
- 3135US2012264267A1Method for fabricating mos transistorLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 3235US2012309171A1Method for fabricating semiconductor deviceLU TSUO-WEN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →