Inventor · disambiguated record
Guillaume Bouche
Also filed as: BOUCHE GUILLAUME
160 granted patents·41 pending applications·1,512 citations·filing 2002–2024
99Inventor score
Files withGLOBALFOUNDRIES INC102INTEL CORP42ST MICROELECTRONICS SA21MAXIM INTEGRATED PRODUCTS10BOUCHE GUILLAUME4
Top patents by PatentIndex Score
201 records- 0199US10026824B1Air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·53 cites·17 claims
- 0299US10014390B1Inner spacer formation for nanosheet field-effect transistors with tall suspensionsGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·74 cites·16 claims
- 0398US9818641B1Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal linesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·32 cites·16 claims
- 0498US9805988B1Method of forming semiconductor structure including suspended semiconductor layer and resulting structureGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·25 cites·16 claims
- 0598US9362165B12D self-aligned via first process flowGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·49 cites·15 claims
- 0697US10475692B2Self aligned buried power railGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 12, 2019·14 cites·18 claims
- 0797US10002786B1Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cutsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 19, 2018·20 cites·18 claims
- 0897US9852986B1Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuitGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 26, 2017·19 cites·10 claims
- 0997US9818876B1Method for fabricating a finFET metallization architecture using a self-aligned contact etchGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·13 cites·11 claims
- 1097US9818640B1Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal linesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·19 cites·16 claims
- 1197US9455204B110 nm alternative N/P doped fin for SSRW schemeGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·21 cites·20 claims
- 1297US9431512B2Methods of forming nanowire devices with spacers and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·32 cites·19 claims
- 1397US9406775B1Method for creating self-aligned compact contacts in an IC device meeting fabrication spacing constraintsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·22 cites·15 claims
- 1497US9276064B1Fabricating stacked nanowire, field-effect transistorsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 1, 2016·68 cites·20 claims
- 1596US10566248B1Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillarGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 18, 2020·16 cites·6 claims
- 1696US10366930B1Self-aligned gate cut isolationGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 30, 2019·15 cites·20 claims
- 1796US9899268B2Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 20, 2018·14 cites·19 claims
- 1896US9812400B1Contact line having insulating spacer therein and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·19 cites·15 claims
- 1996US9812351B1Interconnection cells having variable width metal lines and fully-self aligned continuity cutsGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·18 cites·20 claims
- 2096US7684109B2Bragg mirror optimized for shear wavesMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Mar 23, 2010·280 cites·20 claims
- 2195US10043703B2Apparatus and method for forming interconnection lines having variable pitch and variable widthsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 7, 2018·10 cites·8 claims
- 2295US9818651B2Methods, apparatus and system for a passthrough-based architectureGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·15 cites·10 claims
- 2395US9425097B1Cut first alternative for 2D self-aligned viaGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·12 cites·10 claims
- 2494US10199271B1Self-aligned metal wire on contact structure and method for forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 5, 2019·10 cites·8 claims
- 2594US9825031B1Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 21, 2017·23 cites·16 claims
- 2694US9786545B1Method of forming ANA regions in an integrated circuitGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·11 cites·20 claims
- 2794US9691775B1Combined SADP fins for semiconductor devices and methods of making the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 27, 2017·25 cites·12 claims
- 2894US9202751B2Transistor contacts self-aligned in two dimensionsGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 1, 2015·13 cites·20 claims
- 2993US12211786B2Stacked vias with bottom portions formed using selective growthINTEL CORP·Filed 2021·Granted Jan 28, 2025·2 cites·20 claims
- 3093US9887127B1Interconnection lines having variable widths and partially self-aligned continuity cutsGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 6, 2018·8 cites·8 claims
- 3193US9263325B1Precut metal linesGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·12 cites·20 claims
- 3293US7768364B2Bulk acoustic resonators with multi-layer electrodesMAXIM INTEGRATED PRODUCTS·Filed 2008·Granted Aug 3, 2010·34 cites·22 claims
- 3392US10770388B2Transistor with recessed cross couple for gate contact over active region integrationIBM·Filed 2018·Granted Sep 8, 2020·8 cites·9 claims
- 3492US9905473B1Self-aligned contact etch for fabricating a FinFETGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·7 cites·19 claims
- 3592US9679805B2Self-aligned back end of line cutGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·7 cites·14 claims
- 3691US10685874B1Self-aligned cuts in an interconnect structureGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 16, 2020·6 cites·17 claims
- 3791US9691626B1Method of forming a pattern for interconnection lines in an integrated circuit wherein the pattern includes gamma and beta block mask portionsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 27, 2017·7 cites·18 claims
- 3891US9679809B1Method of forming self aligned continuity blocks for mandrel and non-mandrel interconnect linesGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·8 cites·15 claims
- 3991US9673316B1Vertical semiconductor device having frontside interconnectionsMAXIM INTEGRATED PRODUCTS·Filed 2013·Granted Jun 6, 2017·9 cites·8 claims
- 4091US9306019B2Integrated circuits with nanowires and methods of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 5, 2016·12 cites·16 claims
- 4191US9236437B2Method for creating self-aligned transistor contactsGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·11 cites·8 claims
- 4291US7612488B1Method to control BAW resonator top electrode edge during patterningMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Nov 3, 2009·19 cites·28 claims
- 4390US11482524B2Gate spacing in integrated circuit structuresINTEL CORP·Filed 2020·Granted Oct 25, 2022·2 cites·20 claims
- 4490US9660075B2Integrated circuits with dual silicide contacts and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2016·Granted May 23, 2017·5 cites·19 claims
- 4590US9508642B2Self-aligned back end of line cutGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 29, 2016·9 cites·17 claims
- 4690US9390979B2Opposite polarity borderless replacement metal contact schemeGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·9 cites·14 claims
- 4790US7966722B2Planarization method in the fabrication of a circuitTRIQUINT SEMICONDUCTOR INC·Filed 2008·Granted Jun 28, 2011·24 cites·8 claims
- 4889US10453750B2Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·5 cites·18 claims
- 4989US10083858B2Interconnection lines having variable widths and partially self-aligned continuity cutsGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·5 cites·11 claims
- 5089US9818623B2Method of forming a pattern for interconnection lines and associated continuity blocks in an integrated circuitGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·6 cites·17 claims
Showing the top 50 of 201 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →