Inventor · disambiguated record

Guan-Lin Chen

Also filed as: CHEN GUAN-LIN

99 granted patents·78 pending applications·213 citations·filing 2012–2025

99Inventor score

Technology areasH10D H10P H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD161 TAIWAN SEMICONDUCTOR MFG5 ADVANCED CONNECTEK INC3 UNITED MICROELECTRONICS CORP2 ATOMIC ENERGY COUNCIL1

Top patents by PatentIndex Score

177 records

0199US11462612B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 4, 2022·6 cites·20 claims
0298US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
0398US11798944B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·4 cites·20 claims
0498US11527534B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
0598US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
0698US11296081B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·4 cites·20 claims
0798US11222948B2Semiconductor structure and method of fabricating the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
0897US12033899B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·2 cites·20 claims
0997US11996410B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
1097US11855079B2Integrated circuit with backside trench for metal gate definitionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
1196US12040371B2Multi-layer channel structures and methods of fabricating the same in field-effect transistors preliminary classTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·2 cites·20 claims
1296US11855078B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
1396US11637042B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
1495US11817504B2Isolation structures and methods of forming the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
1595US11581415B2Multi-layer channel structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
1695US9306069B2Isolation structure of fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 5, 2016·15 cites·20 claims
1795US9281378B2Fin recess last process for FinFET fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 8, 2016·16 cites·20 claims
1895US9196522B2FinFET with buried insulator layer and method for formingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·18 cites·20 claims
1994US12300723B2Transistor including downward extending silicideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·2 cites·20 claims
2094US11710737B2Hybrid semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
2194US9484461B2Integrated circuit structure with substrate isolation and un-doped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 1, 2016·13 cites·20 claims
2294US9443962B2Recessing STI to increase fin height in fin-first processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·14 cites·20 claims
2393US12132115B2Semiconductor device structure with dielectric stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·1 cites·20 claims
2493US9520498B2FinFET structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·10 cites·20 claims
2593US9349837B2Recessing STI to increase Fin height in Fin-first processTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 24, 2016·15 cites·20 claims
2692US9153668B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·9 cites·20 claims
2791US11637102B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·2 cites·20 claims
2891US11302825B2Self-aligned spacers for multi-gate devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·3 cites·20 claims
2991US2025338564A1Self-aligned spacers for multi-gate devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3090US9406778B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 2, 2016·8 cites·20 claims
3189US11670550B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·1 cites·20 claims
3289US11631770B2Structure and formation method of semiconductor device with stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·2 cites·20 claims
3389US9627385B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·4 cites·20 claims
3488US12376343B2Self-aligned spacers for multi-gate devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
3587US2025331299A1Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3686US12402407B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
3786US11075201B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
3886US10115788B2Semiconductor devices with horizontal gate all around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 30, 2018·6 cites·20 claims
3985US12376365B2Nanosheet devices with hybrid structures and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
4085US2025098293A1Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4184US12389643B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
4284US10453842B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·2 cites·20 claims
4383US12453147B2Semiconductor structure and method of fabricating the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
4483US12414357B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
4583US9806178B2FinFET structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 31, 2017·2 cites·20 claims
4683US2024387662A1Semiconductor Devices and MethodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4783US2025359284A1Nanosheet Devices With Hybrid Structures And Methods Of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4883US2024387623A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4983US2025301770A1Self-Aligned Metal Gate for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5083US2025366008A1Field effect transistor with gate isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 177 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →