Inventor · disambiguated record
Guirong Liang
Also filed as: LIANG GUIRONG
27 granted patents·3 pending applications·239 citations·filing 2011–2024
96Inventor score
Files withSANDISK TECHNOLOGIES LLC10SANDISK TECHNOLOGIES INC8WESTERN DIGITAL TECH INC7CHEN WENZHOU1HEMINK GERRIT JAN1
Top patents by PatentIndex Score
30 records- 0196US11139031B1Neighbor word line compensation full sequence program schemeSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 5, 2021·6 cites·20 claims
- 0295US9785357B2Systems and methods for sampling data at a non-volatile memory systemSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 10, 2017·35 cites·20 claims
- 0395US9275741B1Temperature compensation management in solid-state memoryWESTERN DIGITAL TECH INC·Filed 2014·Granted Mar 1, 2016·20 cites·16 claims
- 0494US9563504B2Partial block erase for data refreshing and open-block programmingSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 7, 2017·19 cites·20 claims
- 0594US8644075B2Ramping pass voltage to enhance channel boost in memory deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 4, 2014·20 cites·8 claims
- 0693US11978516B2Dynamic sense amplifier supply voltage for power and die size reductionSANDISK TECHNOLOGIES LLC·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 0792US9805809B1State-dependent read compensationSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·14 cites·18 claims
- 0892US8395936B2Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memoryLI HAIBO·Filed 2011·Granted Mar 12, 2013·19 cites·20 claims
- 0991US12046289B2Sub-block status dependent device operationSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 23, 2024·2 cites·20 claims
- 1091US8416624B2Erase and programming techniques to reduce the widening of state distributions in non-volatile memoriesLEI BO·Filed 2011·Granted Apr 9, 2013·22 cites·40 claims
- 1189US11887674B2Utilizing data pattern effect to control read clock timing and bit line kick for read time reductionSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 1289US8526233B2Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensationHEMINK GERRIT JAN·Filed 2011·Granted Sep 3, 2013·11 cites·22 claims
- 1388US8942043B2Non-volatile storage with process that reduces read disturb on end wordlinesSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jan 27, 2015·12 cites·22 claims
- 1487US8804425B2Selected word line dependent programming voltageCHEN WENZHOU·Filed 2012·Granted Aug 12, 2014·17 cites·21 claims
- 1586US9007841B1Programming scheme for improved voltage distribution in solid-state memoryWESTERN DIGITAL TECH INC·Filed 2013·Granted Apr 14, 2015·9 cites·44 claims
- 1686US8861269B2Internal data load for non-volatile storageSANDISK TECHNOLOGIES INC·Filed 2013·Granted Oct 14, 2014·9 cites·16 claims
- 1785US9672934B2Temperature compensation management in solid-state memoryWESTERN DIGITAL TECH INC·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 1882US9472270B2Nonvolatile storage reflow detectionSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 18, 2016·6 cites·27 claims
- 1970US8638606B2Substrate bias during program of non-volatile storageZHAO DENGTAO·Filed 2011·Granted Jan 28, 2014·5 cites·28 claims
- 2064US9053820B2Internal data load for non-volatile storageSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 9, 2015·2 cites·20 claims
- 2157US12205647B2Programming techniques to reduce programming stress in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 21, 2025·0 cites·16 claims
- 2256US9583206B2Data storage device having reflow awarenessSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 28, 2017·1 cites·20 claims
- 2355US12399813B2Sense time separation in foggy-fine program to improve optimal VT widthWESTERN DIGITAL TECH INC·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2455US12142325B2Pre-read cycle timing shrink by SGD bias control and page and wordline controlSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2552US11688469B2Non-volatile memory with sub-block based self-boosting schemeSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 27, 2023·0 cites·19 claims
- 2649US2025299739A1Nonvolatile memory with fast program voltage ramp downWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 2748US11605437B2Memory programming with selectively skipped verify pulses for performance improvementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 2847US2024386973A1Hybrid erase for data retention threshold voltage margin improvementWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2947US2024290390A1Programming erase state as last program state during a programming cycle of a non-volatile memory structureWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3042US11636897B2Peak current and program time optimization through loop dependent voltage ramp target and timing controlSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 25, 2023·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →