Inventor · disambiguated record
Guangsu Shao
Also filed as: SHAO GUANGSU
59 granted patents·14 pending applications·8 citations·filing 2021–2023
96Inventor score
Top patents by PatentIndex Score
73 records- 0196US12349332B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 1, 2025·2 cites·12 claims
- 0296US12310005B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·2 cites·20 claims
- 0394US11637189B1Semiconductor structure and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 25, 2023·2 cites·15 claims
- 0490US12396161B2Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 19, 2025·1 cites·13 claims
- 0588US11854862B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 26, 2023·1 cites·7 claims
- 0666US12376280B2Memory and memory forming methodCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 29, 2025·0 cites·17 claims
- 0764US12495539B2Semiconductor structure, method for manufacturing same, and memoryCHANGXIN MEMORY TECH INC·Filed 2023·Granted Dec 9, 2025·0 cites·12 claims
- 0864US12349333B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 1, 2025·0 cites·12 claims
- 0964US12262523B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Mar 25, 2025·0 cites·17 claims
- 1063US12426234B2Semiconductor structure for DRAM having a pillar lower electrode and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 1163US12408326B2Semiconductor structure and formation method thereof, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 2, 2025·0 cites·16 claims
- 1263US12336170B2Semiconductor structure having two word lines covering part of opposite side surfaces of the plurality of semiconductor channelsCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·7 claims
- 1363US12309992B2Semiconductor structure and formation method thereof, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·0 cites·16 claims
- 1462US12513893B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 30, 2025·0 cites·18 claims
- 1562US12402303B2Semiconductor structure having a plurality of bit lines spaced apart from each other in a first direction and extend in a second directionCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 26, 2025·0 cites·16 claims
- 1662US12389589B2Semiconductor device and method for manufacturing semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·0 cites·19 claims
- 1762US12389586B2Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depthCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·0 cites·15 claims
- 1862US12369313B2Semiconductor structure and method for fabricating the sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1962US12317484B2Method for forming a first and a second transistors array having plurality of first and semiconductor pillarsCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 27, 2025·0 cites·14 claims
- 2062US12317472B2Method for manufacturing semiconductor device, semiconductor device, and stack deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 27, 2025·0 cites·8 claims
- 2161US12414286B2Semiconductor structure and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 9, 2025·0 cites·16 claims
- 2261US12414291B2Semiconductor structure and manufacturing method thereof, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 2361US12317473B2Semiconductor device having plurality of trenches with different depthCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 27, 2025·0 cites·5 claims
- 2461US12309998B2Semiconductor structure and method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 2560US12446213B2Method for forming semiconductor device and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 14, 2025·0 cites·11 claims
- 2660US12446212B2Semiconductor structure, method for manufacturing same and memoryCHANGXIN MEMORY TECH INC·Filed 2023·Granted Oct 14, 2025·0 cites·18 claims
- 2760US12369305B2Semiconductor structure, method for manufacturing same and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·16 claims
- 2860US12262531B2Memory cell structure, memory array structure, semiconductor structure having a capacitor structure surrounded on the outer side of the word lineCHANGXIN MEMORY TECH INC·Filed 2022·Granted Mar 25, 2025·0 cites·13 claims
- 2959US12426250B2Semiconductor structure, method for manufacturing same and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·9 claims
- 3059US12369311B2Semiconductor device and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·15 claims
- 3159US12356666B2Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 3259US12317483B2Semiconductor structure having isolation structure embedded in the groove of the bit lineCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 27, 2025·0 cites·11 claims
- 3359US12300744B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 3458US12464711B2Three-dimensional memory and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Nov 4, 2025·0 cites·18 claims
- 3558US12426251B2Semiconductor structure, method for manufacturing semiconductor structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2023·Granted Sep 23, 2025·0 cites·17 claims
- 3658US12426249B2Semiconductor structure and method for manufacturing same, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 3758US12426255B2Semiconductor structure, method for manufacturing semiconductor structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·15 claims
- 3858US12342534B2Method for fabricating a semiconductor structure with pillar array and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·0 cites·15 claims
- 3958US2024057312A1Array structure, semiconductor structure, and method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 4057US12490423B2Semiconductor structure and method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 2, 2025·0 cites·18 claims
- 4157US12382625B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 5, 2025·0 cites·6 claims
- 4257US12376283B2Semiconductor structure, method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 29, 2025·0 cites·10 claims
- 4357US12376289B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 29, 2025·0 cites·15 claims
- 4457US12376281B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 29, 2025·0 cites·13 claims
- 4557US12369297B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·14 claims
- 4657US12363889B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 15, 2025·0 cites·15 claims
- 4757US12336162B2Memory, semiconductor structure and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·18 claims
- 4857US12225718B2Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 11, 2025·0 cites·17 claims
- 4956US12446206B2Three-dimensional semiconductor structure and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 14, 2025·0 cites·14 claims
- 5056US12426236B2Semiconductor structure, method for manufacturing same and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·0 cites·6 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →