Inventor · disambiguated record
H. Jim Fulford
Also filed as: FULFORD H JIM · FULFORD H JIM JR · FULFORD JIM H JR · FULFORD JR H JIM
369 granted patents·64 pending applications·10,188 citations·filing 1994–2025
99Inventor score
Files withADVANCED MICRO DEVICES INC257TOKYO ELECTRON LTD168ADVANCED MICRO DEVCIES INC1ADVANCED MICRON DEVICES INC1ADVANCED MIRCO DEVICES1
Top patents by PatentIndex Score
433 records- 0199US11527545B2Architecture design and process for 3D logic and 3D memoryTOKYO ELECTRON LTD·Filed 2020·Granted Dec 13, 2022·10 cites·20 claims
- 0299US6111260AMethod and apparatus for in situ anneal during ion implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 29, 2000·305 cites·19 claims
- 0398US11302587B2Method for fabricating a 3D semiconductor apparatus having two vertically disposed seminconductor devicesTOKYO ELECTRON LTD·Filed 2020·Granted Apr 12, 2022·5 cites·20 claims
- 0498US6225168B1Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·239 cites·20 claims
- 0598US5850105ASubstantially planar semiconductor topography using dielectrics and chemical mechanical polishADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 15, 1998·278 cites·10 claims
- 0697US11631671B23D complementary metal oxide semiconductor (CMOS) device and method of forming the sameTOKYO ELECTRON LTD·Filed 2020·Granted Apr 18, 2023·5 cites·23 claims
- 0797US6255698B1Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuitADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·202 cites·18 claims
- 0897US6093611AOxide liner for high reliability with reduced encroachment of the source/drain regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 25, 2000·294 cites·25 claims
- 0996US6015739AMethod of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constantADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 18, 2000·166 cites·17 claims
- 1096US5789300AMethod of making IGFETs in densely and sparsely populated areas of a substrateADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 4, 1998·233 cites·20 claims
- 1195US5793090AIntegrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 11, 1998·123 cites·18 claims
- 1294US11195832B2High performance nanosheet fabrication method with enhanced high mobility channel elementsTOKYO ELECTRON LTD·Filed 2019·Granted Dec 7, 2021·8 cites·8 claims
- 1394US5953626ADissolvable dielectric methodADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 14, 1999·160 cites·12 claims
- 1493US11652139B2Three-dimensional universal CMOS deviceTOKYO ELECTRON LTD·Filed 2021·Granted May 16, 2023·2 cites·19 claims
- 1593US6200865B1Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gateADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·116 cites·20 claims
- 1693US6060345AMethod of making NMOS and PMOS devices with reduced masking stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·114 cites·22 claims
- 1793US5888880ATrench transistor with localized source/drain regions implanted through selectively grown oxide layerADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·113 cites·43 claims
- 1893US5759913AMethod of formation of an air gap within a semiconductor dielectric by solvent desorptionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·148 cites·17 claims
- 1992US11133310B2Method of making multiple nano layer transistors to enhance a multiple stack CFET performanceTOKYO ELECTRON LTD·Filed 2019·Granted Sep 28, 2021·6 cites·8 claims
- 2092US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 2192US5837572ACMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted thereinADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 17, 1998·103 cites·21 claims
- 2292US5827776AMethod of making an integrated circuit which uses an etch stop for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 27, 1998·139 cites·14 claims
- 2391US11557657B2High density 3D layout enhancement of multiple CMOS devicesTOKYO ELECTRON LTD·Filed 2021·Granted Jan 17, 2023·2 cites·9 claims
- 2491US11557655B2Device and method of forming with three-dimensional memory and three-dimensional logicTOKYO ELECTRON LTD·Filed 2020·Granted Jan 17, 2023·2 cites·12 claims
- 2591US11362091B2Multiple nano layer transistor layers with different transistor architectures for improved circuit layout and performanceTOKYO ELECTRON LTD·Filed 2019·Granted Jun 14, 2022·5 cites·11 claims
- 2691US6355955B1Transistor and a method for forming the transistor with elevated and/or relatively shallow source/drain regions to achieve enhanced gate electrode formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 12, 2002·64 cites·8 claims
- 2791US5674788AMethod of forming high pressure silicon oxynitride gate dielectricsADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 7, 1997·151 cites·18 claims
- 2890US11410888B2Method of making 3D CMOS with integrated channel and S/D regionsTOKYO ELECTRON LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
- 2990US11282828B2High density architecture design for 3D logic and 3D memory circuitsTOKYO ELECTRON LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 3090US6245652B1Method of forming ultra thin gate dielectric for high performance semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 12, 2001·57 cites·32 claims
- 3190US6103559AMethod of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabricationAMD INC ADVANCED MICRO DEVICES·Filed 1999·Granted Aug 15, 2000·108 cites·20 claims
- 3290US5918129AMethod of channel doping using diffusion from implanted polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·18 claims
- 3390US5847428AIntegrated circuit gate conductor which uses layered spacers to produce a graded junctionADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 8, 1998·76 cites·8 claims
- 3489US11264289B2Method for threshold voltage tuning through selective deposition of high-K metal gate (HKMG) film stacksTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·2 cites·19 claims
- 3589US11251159B2High performance CMOS using 3D device layoutTOKYO ELECTRON LTD·Filed 2020·Granted Feb 15, 2022·2 cites·12 claims
- 3689US11171208B2High performance circuit applications using stacked 3D metal linesTOKYO ELECTRON LTD·Filed 2020·Granted Nov 9, 2021·2 cites·18 claims
- 3789US6162688AMethod of fabricating a transistor with a dielectric underlayer and device incorporating sameADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 19, 2000·80 cites·20 claims
- 3889US6008095AProcess for formation of isolation trenches with high-K gate dielectricsADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 28, 1999·76 cites·30 claims
- 3989US5930642ATransistor with buried insulative layer beneath the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·104 cites·20 claims
- 4089US5888675AReticle that compensates for radiation-induced lens error in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·68 cites·26 claims
- 4188US11177250B2Method for fabrication of high density logic and memory for advanced circuit architectureTOKYO ELECTRON LTD·Filed 2020·Granted Nov 16, 2021·2 cites·20 claims
- 4288US6746616B1Method and apparatus for providing etch uniformity using zoned temperature controlADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 8, 2004·43 cites·34 claims
- 4388US6258680B1Integrated circuit gate conductor which uses layered spacers to produce a graded junctionADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·13 claims
- 4488US5998288AUltra thin spacers formed laterally adjacent a gate conductor recessed below the upper surface of a substrateADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 7, 1999·75 cites·18 claims
- 4588US5943585ATrench isolation structure having low K dielectric spacers arranged upon an oxide liner incorporated with nitrogenADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 24, 1999·92 cites·12 claims
- 4688US5792706AInterlevel dielectric with air gaps to reduce permitivityADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 11, 1998·96 cites·20 claims
- 4788US5710054AMethod of forming a shallow junction by diffusion from a silicon-based spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 20, 1998·92 cites·57 claims
- 4887US6259142B1Multiple split gate semiconductor device and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·9 claims
- 4987US6100173AForming a self-aligned silicide gate conductor to a greater thickness than junction silicide structures using a dual-salicidation processADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·68 cites·19 claims
- 5087US5840451AIndividually controllable radiation sources for providing an image pattern in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 24, 1998·61 cites·48 claims
Showing the top 50 of 433 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →