Inventor · disambiguated record
Hanna Bamnolker
Also filed as: BAMNOLKER HANNA · BAMNOLKER HANNA A
23 granted patents·9 pending applications·523 citations·filing 1995–2025
96Inventor score
Top patents by PatentIndex Score
32 records- 0197US11970776B2Atomic layer deposition of metal filmsLAM RES CORP·Filed 2020·Granted Apr 30, 2024·9 cites·22 claims
- 0297US11549175B2Method of depositing tungsten and other metals in 3D NAND structuresLAM RES CORP·Filed 2019·Granted Jan 10, 2023·17 cites·22 claims
- 0397US10573522B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2017·Granted Feb 25, 2020·38 cites·20 claims
- 0497US9595470B2Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursorLAM RES CORP·Filed 2015·Granted Mar 14, 2017·27 cites·14 claims
- 0596US11355345B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2019·Granted Jun 7, 2022·21 cites·14 claims
- 0696US10777453B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2019·Granted Sep 15, 2020·18 cites·20 claims
- 0796US10510590B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2018·Granted Dec 17, 2019·26 cites·20 claims
- 0896US9978605B2Method of forming low resistivity fluorine free tungsten film without nucleationLAM RES CORP·Filed 2017·Granted May 22, 2018·23 cites·23 claims
- 0996US9953984B2Tungsten for wordline applicationsLAM RES CORP·Filed 2016·Granted Apr 24, 2018·12 cites·20 claims
- 1095US12362188B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2022·Granted Jul 15, 2025·2 cites·14 claims
- 1195US12351914B2Deposition of films using molybdenum precursorsLAM RES CORP·Filed 2022·Granted Jul 8, 2025·2 cites·16 claims
- 1294US9589808B2Method for depositing extremely low resistivity tungstenLAM RES CORP·Filed 2013·Granted Mar 7, 2017·17 cites·14 claims
- 1394US6103379AProcess for the preparation of microspheres and microspheres made therebyUNIV BAR ILAN·Filed 1995·Granted Aug 15, 2000·164 cites·41 claims
- 1492US10546751B2Forming low resistivity fluorine free tungsten film without nucleationLAM RES CORP·Filed 2018·Granted Jan 28, 2020·8 cites·19 claims
- 1586US6890859B1Methods of forming semiconductor structures having reduced defects, and articles and devices formed therebyCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted May 10, 2005·38 cites·30 claims
- 1686US2025323045A1Method for preventing line bending during metal fill processLAM RES CORP·Filed 2025·Application pending·0 cites
- 1785US2024297075A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2024·Application pending·0 cites
- 1881US10214807B2Atomic layer deposition of tungsten for enhanced fill and reduced substrate attackLAM RES CORP·Filed 2016·Granted Feb 26, 2019·3 cites·14 claims
- 1977US2024271281A1Deposition of metal filmsLAM RES CORP·Filed 2024·Application pending·0 cites
- 2075US10529722B2Tungsten for wordline applicationsLAM RES CORP·Filed 2018·Granted Jan 7, 2020·1 cites·19 claims
- 2175US2022223471A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2022·Application pending·0 cites
- 2274US6004399AUltra-low particle semiconductor cleaner for removal of particle contamination and residues from surface oxide formation on semiconductor wafersCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Dec 21, 1999·46 cites·20 claims
- 2371US7129178B1Reducing defect formation within an etched semiconductor topographyCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Oct 31, 2006·17 cites·11 claims
- 2470US6794269B1Method for and structure formed from fabricating a relatively deep isolation structureCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Sep 21, 2004·17 cites·19 claims
- 2570US2020365456A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2020·Application pending·0 cites
- 2669US2023290680A1Self-limiting growthLAM RES CORP·Filed 2023·Application pending·0 cites
- 2756US6756315B1Method of forming contact openingsCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 29, 2004·7 cites·25 claims
- 2855US11225712B2Atomic layer deposition of tungsten for enhanced fill and reduced substrate attackLAM RES CORP·Filed 2019·Granted Jan 18, 2022·0 cites·5 claims
- 2952US2020402846A1Self-limiting growthLAM RES CORP·Filed 2018·Application pending·0 cites
- 3047US6555484B1Method for controlling the oxidation of implanted siliconCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Apr 29, 2003·10 cites·18 claims
- 3147US2017133231A1Method for depositing extremely low resistivity tungstenLAM RES CORP·Filed 2017·Application pending·0 cites
- 3234US2015348840A1Methods of filling high aspect ratio features with fluorine free tungstenLAM RES CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →