Low resistivity films containing molybdenum

Abstract

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

1 . A method comprising:
 providing a tungsten (W)-containing layer on a substrate; and   depositing a molybdenum (Mo)-containing layer on the W-containing layer.   
     
     
         2 . The method of  claim 1 , wherein the W-containing layer is a WCN layer. 
     
     
         3 . The method of  claim 1 , wherein the W-containing layer is a W nucleation layer. 
     
     
         4 . The method of  claim 1 , wherein the W-containing layer is deposited from one or more tungsten chloride precursors. 
     
     
         5 . The method of  claim 1 , wherein the Mo-containing layer is a Mo layer having less than 1 (atomic) % impurities. 
     
     
         6 . The method of  claim 1 , further comprising thermally annealing the Mo-containing layer. 
     
     
         7 . The method of  claim 1 , wherein the Mo-containing layer is deposited by exposing the W-containing layer to a reducing agent and a Mo-containing precursor selected from: molybdenum hexafluoride (MoF 6 ), molybdenum pentachloride (MoCl 5 ), molybdenum dichloride dioxide (MoO 2 Cl 2 ), molybdenum tetrachloride oxide (MoOCl 4 ), and molybdenum hexacarbonyl (Mo(CO) 6 ). 
     
     
         8 . The method of  claim 7 , wherein a substrate temperature during exposure to the Mo-containing precursor is less than 550° C. 
     
     
         9 . The method of  claim 7 , wherein the substrate is exposed to the reducing agent at first substrate temperature and is exposed to the Mo-containing precursor at a second substrate temperature, wherein the first substrate temperature is less than the second substrate temperature. 
     
     
         10 . The method of  claim 9 , wherein the reducing agent is a mixture of a boron-containing reducing agent and a silicon-containing reducing agent. 
     
     
         11 . A method comprising:
 flowing a reducing agent gas to a process chamber housing a substrate, at a first substrate temperature to form a conformal reducing agent layer on the substrate; and   exposing the conformal reducing agent layer to a molybdenum-containing precursor at a second substrate temperature to convert the reducing agent layer to molybdenum.   
     
     
         12 . The method of  claim 11 , wherein the first substrate temperature is less than the second substrate temperature. 
     
     
         13 . The method of  claim 11 , wherein the reducing agent is a mixture of a boron-containing reducing agent and a silicon-containing reducing agent. 
     
     
         14 . The method of  claim 11 , wherein the first substrate temperature is no more than 400° C. and the second substrate temperature is at least 500° C. 
     
     
         15 . The method of  claim 11 , further comprising annealing the molybdenum. 
     
     
         16 . A method comprising:
 pulsing a reducing agent, wherein the reducing agent is boron (B)-containing, silicon (Si)-containing or germanium (Ge)-containing; and   pulsing a Mo-containing precursor,   wherein the Mo-containing precursor is reduced by the reducing agent or a product thereof to form a multi-component tungsten-containing film containing one or more of B, Si, and Ge on the substrate.   
     
     
         17 . The method of  claim 16 , wherein the multi-component tungsten-containing film contains between 5% and 60% (atomic) B, Si, or Ge, and wherein the between 5% and 60% (atomic) B, Si, or Ge is provided by the reducing agent.