Inventor · disambiguated record
Chiukin Steven Lai
Also filed as: LAI CHIUKIN STEVEN
14 granted patents·17 pending applications·766 citations·filing 2007–2025
94Inventor score
Top patents by PatentIndex Score
31 records- 0198US11069535B2Atomic layer etch of tungsten for enhanced tungsten deposition fillLAM RES CORP·Filed 2020·Granted Jul 20, 2021·7 cites·19 claims
- 0297US9972504B2Atomic layer etching of tungsten for enhanced tungsten deposition fillLAM RES CORP·Filed 2015·Granted May 15, 2018·21 cites·19 claims
- 0397US9748137B2Method for void-free cobalt gap fillLAM RES CORP·Filed 2015·Granted Aug 29, 2017·26 cites·18 claims
- 0497US9362163B2Methods and apparatuses for atomic layer cleaning of contacts and viasLAM RES CORP·Filed 2014·Granted Jun 7, 2016·109 cites·17 claims
- 0597US7977249B1Methods for removing silicon nitride and other materials during fabrication of contactsNOVELLUS SYSTEMS INC·Filed 2008·Granted Jul 12, 2011·183 cites·20 claims
- 0696US10777453B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2019·Granted Sep 15, 2020·18 cites·20 claims
- 0796US10510590B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2018·Granted Dec 17, 2019·26 cites·20 claims
- 0896US8187486B1Modulating etch selectivity and etch rate of silicon nitride thin filmsLIU XINYE·Filed 2007·Granted May 29, 2012·308 cites·26 claims
- 0995US10731250B2Depositing ruthenium layers in interconnect metallizationLAM RES CORP·Filed 2018·Granted Aug 4, 2020·12 cites·25 claims
- 1093US12334351B2Molybdenum depositionLAM RES CORP·Filed 2020·Granted Jun 17, 2025·3 cites·18 claims
- 1193US10283404B2Selective deposition of WCN barrier/adhesion layer for interconnectLAM RES CORP·Filed 2017·Granted May 7, 2019·19 cites·20 claims
- 1293US8617348B1Modulating etch selectivity and etch rate of silicon nitride thin filmsLIU XINYE·Filed 2012·Granted Dec 31, 2013·24 cites·20 claims
- 1390US10438847B2Manganese barrier and adhesion layers for cobaltLAM RES CORP·Filed 2017·Granted Oct 8, 2019·6 cites·13 claims
- 1486US10229826B2Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxideLAM RES CORP·Filed 2017·Granted Mar 12, 2019·4 cites·19 claims
- 1585US2024297075A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2024·Application pending·0 cites
- 1675US2022223471A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2022·Application pending·0 cites
- 1774US2022115244A1Atomic layer etching of tungsten for enhanced tungsten deposition fillLAM RES CORP·Filed 2021·Application pending·0 cites
- 1872US2021305059A1Atomic layer etching of tungsten for enhanced tungsten deposition fillLAM RES CORP·Filed 2021·Application pending·0 cites
- 1971US2025323046A1Molybdenum depositionLAM RES CORP·Filed 2025·Application pending·0 cites
- 2070US2020365456A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2020·Application pending·0 cites
- 2158US2018240682A1Atomic layer etch of tungsten for enhanced tungsten deposition fillLAM RES CORP·Filed 2018·Application pending·0 cites
- 2252US2025382703A1Plasma enhanced low temperature atomic layer deposition of metalsLAM RES CORP·Filed 2023·Application pending·0 cites
- 2351US2025183097A1Low resistivity contacts and interconnectsLAM RES CORP·Filed 2021·Application pending·0 cites
- 2451US2025287675A1Molybdenum halides in memory applicationsLAM RES CORP·Filed 2023·Application pending·0 cites
- 2549US2025259894A1Molybdenum integration and void-free fillLAM RES CORP·Filed 2023·Application pending·0 cites
- 2649US2023326790A1Low resistivity contacts and interconnectsLAM RES CORP·Filed 2021·Application pending·0 cites
- 2747US2025069948A1Deposition of metals in recessed features with the use of halogen-containing deposition inhibitorsLAM RES CORP·Filed 2022·Application pending·0 cites
- 2847US2025038003A1Low temperature molybdenum deposition assisted by silicon-containing reactantsLAM RES CORP·Filed 2022·Application pending·0 cites
- 2947US2025183041A1Low resistance molybdenum deposition for logic source/drain contactsLAM RES CORP·Filed 2023·Application pending·0 cites
- 3045US2022298624A1Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturingLAM RES CORP·Filed 2020·Application pending·0 cites
- 3145US2024047269A1Molybdenum deposition in featuresLAM RES CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →