Inventor · disambiguated record
Patrick A. Van Cleemput
Also filed as: VAN CLEEMPUT PATRICK · VAN CLEEMPUT PATRICK A · VAN CLEEMPUT PATRICK AUGUST
55 granted patents·28 pending applications·3,540 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
83 records- 0199US6030881AHigh throughput chemical vapor deposition process capable of filling high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 1998·Granted Feb 29, 2000·575 cites·34 claims
- 0298US12074029B2Molybdenum depositionLAM RES CORP·Filed 2022·Granted Aug 27, 2024·8 cites·11 claims
- 0398US12051589B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Jul 30, 2024·6 cites·17 claims
- 0498US11784047B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Oct 10, 2023·10 cites·17 claims
- 0598US11637037B2Method to create air gapsLAM RES CORP·Filed 2020·Granted Apr 25, 2023·12 cites·16 claims
- 0698US11183383B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2020·Granted Nov 23, 2021·16 cites·18 claims
- 0798US9824893B1Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2016·Granted Nov 21, 2017·442 cites·19 claims
- 0898US7208389B1Method of porogen removal from porous low-k films using UV radiationNOVELLUS SYSTEMS INC·Filed 2003·Granted Apr 24, 2007·602 cites·38 claims
- 0998US6395150B1Very high aspect ratio gapfill using HDPNOVELLUS SYSTEMS INC·Filed 1998·Granted May 28, 2002·444 cites·12 claims
- 1098US5872058AHigh aspect ratio gapfill process by using HDPNOVELLUS SYSTEMS INC·Filed 1997·Granted Feb 16, 1999·426 cites·10 claims
- 1197US12112980B2Method to create air gapsLAM RES CORP·Filed 2021·Granted Oct 8, 2024·4 cites·12 claims
- 1297US11970776B2Atomic layer deposition of metal filmsLAM RES CORP·Filed 2020·Granted Apr 30, 2024·9 cites·22 claims
- 1397US11088019B2Method to create air gapsLAM RES CORP·Filed 2018·Granted Aug 10, 2021·17 cites·18 claims
- 1497US11031245B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2017·Granted Jun 8, 2021·21 cites·18 claims
- 1597US6576345B1Dielectric films with low dielectric constantsNOVELLUS SYSTEMS INC·Filed 2000·Granted Jun 10, 2003·110 cites·45 claims
- 1697US6340628B1Method to deposit SiOCH films with dielectric constant below 3.0NOVELLUS SYSTEMS INC·Filed 2000·Granted Jan 22, 2002·166 cites·22 claims
- 1796US10777453B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2019·Granted Sep 15, 2020·18 cites·20 claims
- 1896US10510590B2Low resistivity films containing molybdenumLAM RES CORP·Filed 2018·Granted Dec 17, 2019·26 cites·20 claims
- 1996US9773643B1Apparatus and method for deposition and etch in gap fillLAM RES CORP·Filed 2016·Granted Sep 26, 2017·41 cites·19 claims
- 2096US6766810B1Methods and apparatus to control pressure in a supercritical fluid reactorNOVELLUS SYSTEMS INC·Filed 2002·Granted Jul 27, 2004·59 cites·39 claims
- 2195US12351914B2Deposition of films using molybdenum precursorsLAM RES CORP·Filed 2022·Granted Jul 8, 2025·2 cites·16 claims
- 2295US10373806B2Apparatus and method for deposition and etch in gap fillLAM RES CORP·Filed 2017·Granted Aug 6, 2019·17 cites·18 claims
- 2395US7176144B1Plasma detemplating and silanol capping of porous dielectric filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Feb 13, 2007·128 cites·41 claims
- 2494US6550484B1Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processingNOVELLUS SYSTEMS INC·Filed 2001·Granted Apr 22, 2003·91 cites·39 claims
- 2593US12474640B2Integration of dry development and etch processes for EUV patterning in a single process chamberLAM RES CORP·Filed 2024·Granted Nov 18, 2025·4 cites·20 claims
- 2693US12334351B2Molybdenum depositionLAM RES CORP·Filed 2020·Granted Jun 17, 2025·3 cites·18 claims
- 2793US10957514B2Apparatus and method for deposition and etch in gap fillLAM RES CORP·Filed 2019·Granted Mar 23, 2021·4 cites·7 claims
- 2893US10262943B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2018·Granted Apr 16, 2019·7 cites·19 claims
- 2993US9583386B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2015·Granted Feb 28, 2017·8 cites·21 claims
- 3093US6867152B1Properties of a silica thin film produced by a rapid vapor deposition (RVD) processNOVELLUS SYSTEMS INC·Filed 2003·Granted Mar 15, 2005·83 cites·31 claims
- 3192US12327762B2Molybdenum fillLAM RES CORP·Filed 2020·Granted Jun 10, 2025·3 cites·25 claims
- 3292US12148623B2Deposition of tungsten on molybdenum templatesLAM RES CORP·Filed 2019·Granted Nov 19, 2024·6 cites·28 claims
- 3392US10049921B2Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursorLAM RES CORP·Filed 2014·Granted Aug 14, 2018·15 cites·19 claims
- 3491US9245739B2Low-K oxide deposition by hydrolysis and condensationLAM RES CORP·Filed 2014·Granted Jan 26, 2016·14 cites·20 claims
- 3590US9916977B2Low k dielectric deposition via UV driven photopolymerizationLAM RES CORP·Filed 2015·Granted Mar 13, 2018·7 cites·17 claims
- 3689US6951765B1Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactorNOVELLUS SYSTEMS INC·Filed 2001·Granted Oct 4, 2005·28 cites·15 claims
- 3785US2024297075A1Low resistivity films containing molybdenumLAM RES CORP·Filed 2024·Application pending·0 cites
- 3884US11670516B2Metal-containing passivation for high aspect ratio etchLAM RES CORP·Filed 2019·Granted Jun 6, 2023·3 cites·20 claims
- 3984US10246774B2Additive for ALD deposition profile tuning in gap featuresLAM RES CORP·Filed 2016·Granted Apr 2, 2019·4 cites·12 claims
- 4084US6846391B1Process for depositing F-doped silica glass in high aspect ratio structuresNOVELLUS SYSTEMS·Filed 2001·Granted Jan 25, 2005·33 cites·35 claims
- 4184US2024429091A1Method to create air gapsLAM RES CORP·Filed 2024·Application pending·0 cites
- 4282US12203168B2Metal depositionLAM RES CORP·Filed 2020·Granted Jan 21, 2025·1 cites·20 claims
- 4381US12274047B2Line bending control for memory applicationsLAM RES CORP·Filed 2023·Granted Apr 8, 2025·0 cites·21 claims
- 4481US9875968B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2017·Granted Jan 23, 2018·2 cites·19 claims
- 4581US2025115998A1Metal depositionLAM RES CORP·Filed 2024·Application pending·0 cites
- 4680US10615169B2Selective deposition of SiN on horizontal surfacesLAM RES CORP·Filed 2018·Granted Apr 7, 2020·5 cites·16 claims
- 4779US2025029840A1Molybdenum depositionLAM RES CORP·Filed 2024·Application pending·0 cites
- 4878US10128116B2Integrated direct dielectric and metal depositionLAM RES CORP·Filed 2017·Granted Nov 13, 2018·2 cites·20 claims
- 4977US2024271281A1Deposition of metal filmsLAM RES CORP·Filed 2024·Application pending·0 cites
- 5077US2025234503A1Line bending control for memory applicationsLAM RES CORP·Filed 2025·Application pending·0 cites
Showing the top 50 of 83 patent records by PatentIndex Score.
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