Inventor · disambiguated record
Han-Bong Ko
Also filed as: KO HAN-BONG
9 granted patents·4 pending applications·90 citations·filing 2007–2013
88Inventor score
Top patents by PatentIndex Score
13 records- 0188US7817464B2Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 19, 2010·22 cites·24 claims
- 0286US7824954B2Methods of forming phase change memory devices having bottom electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·36 claims
- 0383US8445354B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2012·Granted May 21, 2013·5 cites·11 claims
- 0483US8426840B2Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2010·Granted Apr 23, 2013·12 cites·10 claims
- 0583US7791932B2Phase-change material layer and phase-change memory device including the phase-change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·25 claims
- 0679US8012789B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·6 cites·13 claims
- 0779US7563639B2Phase-changeable memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 21, 2009·10 cites·19 claims
- 0872US7727458B2Method of forming a chalcogenide compound targetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·2 cites·17 claims
- 0954US8133429B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2010·Granted Mar 13, 2012·1 cites·32 claims
- 1045US2011315946A1Nonvolatile memory deviceKO HAN-BONG·Filed 2011·Application pending·0 cites
- 1141US2013234100A1Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2013·Application pending·0 cites
- 1239US2008075843A1Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1333US2012032135A1Phase-Change Memory Units and Phase-Change Memory Devices Using the SameKUH BONG-JIN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →