Inventor · disambiguated record
Hans-Juergen Thees
Also filed as: THEES HANS-JUERGEN
30 granted patents·6 pending applications·66 citations·filing 2011–2022
94Inventor score
Files withGLOBALFOUNDRIES INC15INFINEON TECHNOLOGIES AG6KRONHOLZ STEPHAN5THEES HANS-JUERGEN5GLOBALFOUNDRIES US INC2
Top patents by PatentIndex Score
36 records- 0196US9673210B1Semiconductor structure including a nonvolatile memory cell having a charge trapping layer and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 6, 2017·18 cites·24 claims
- 0294US9634017B1Semiconductor structure including a nonvolatile memory cell and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 25, 2017·12 cites·15 claims
- 0391US9634088B1Junction formation with reduced CEFF for 22NM FDSOI devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·7 cites·14 claims
- 0488US8748275B2Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topographyTHEES HANS-JUERGEN·Filed 2011·Granted Jun 10, 2014·11 cites·24 claims
- 0586US9793294B1Junction formation with reduced Ceff for 22nm FDSOI devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 17, 2017·4 cites·19 claims
- 0676US8796080B2Methods of epitaxially forming materials on transistor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Aug 5, 2014·4 cites·13 claims
- 0776US8642419B2Methods of forming isolation structures for semiconductor devicesKRONHOLZ STEPHAN·Filed 2012·Granted Feb 4, 2014·4 cites·9 claims
- 0875US9953876B1Method of forming a semiconductor device structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 24, 2018·2 cites·20 claims
- 0973US10707330B2Semiconductor device with interconnect to source/drainGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 7, 2020·1 cites·19 claims
- 1073US10475901B1Cap removal for gate electrode structures with reduced complexityGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·1 cites·20 claims
- 1167US8735303B2Methods of forming PEET devices with different structures and performance characteristicsTHEES HANS-JUERGEN·Filed 2011·Granted May 27, 2014·2 cites·19 claims
- 1261US10923579B2Semiconductor device with interconnect to source/drainGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 16, 2021·0 cites·12 claims
- 1359US12087816B2Power semiconductor device having a control cell for controlling a load currentINFINEON TECH DRESDEN GMBH & CO KG·Filed 2022·Granted Sep 10, 2024·0 cites·23 claims
- 1458US11195935B2Semiconductor device with novel spacer structures having novel configurationsGLOBALFOUNDRIES US INC·Filed 2019·Granted Dec 7, 2021·0 cites·13 claims
- 1558US9372392B2Reticles for use in forming implant masking layers and methods of forming implant masking layersGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 21, 2016·0 cites·20 claims
- 1657US12266718B2Voltage-controlled switching device with channel regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Apr 1, 2025·0 cites·16 claims
- 1755US11195942B2Semiconductor device including electrode trench structure and isolation trench structure and manufacturing method thereforeINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 7, 2021·0 cites·22 claims
- 1854US11322587B2Method of processing a power semiconductor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted May 3, 2022·0 cites·14 claims
- 1954US9214463B2Methods of forming metal silicide regions on a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 15, 2015·0 cites·20 claims
- 2051US11728420B2Mesa contact for a power semiconductor device and method of producing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 15, 2023·0 cites·24 claims
- 2150US2014191332A1Pfet devices with different structures and performance characteristicsGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2249US11742417B2Power semiconductor device including first and second trench structuresINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·0 cites·23 claims
- 2347US10971599B2Power semiconductor device with self-aligned source regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 6, 2021·0 cites·19 claims
- 2447US9761689B2Method of forming a semiconductor device and according semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 12, 2017·0 cites·18 claims
- 2546US8859356B2Method of forming metal silicide regions on a semiconductor deviceTHEES HANS-JUERGEN·Filed 2011·Granted Oct 14, 2014·0 cites·14 claims
- 2645US12501669B2Mesa contact for MOS controlled power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 16, 2025·0 cites·17 claims
- 2744US2016056261A1Embedded sigma-shaped semiconductor alloys formed in transistorsGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2842US8802360B2Reticles for use in forming implant masking layers and methods of forming implant masking layersMAZUR MARTIN·Filed 2012·Granted Aug 12, 2014·0 cites·8 claims
- 2942US8722479B2Method of protecting STI structures from erosion during processing operationsTHEES HANS-JUERGEN·Filed 2011·Granted May 13, 2014·0 cites·24 claims
- 3041US8987144B2High-K metal gate electrode structures formed by cap layer removal without sacrificial spacerKRONHOLZ STEPHAN·Filed 2011·Granted Mar 24, 2015·0 cites·15 claims
- 3141US2019051565A1Cmos devices and manufacturing method thereofGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3240US2013221478A1Methods of forming isolation structures for semiconductor devices by employing a spin-on glass material or a flowable oxide materialKRONHOLZ STEPHAN·Filed 2012·Application pending·0 cites
- 3339US2013214392A1Methods of forming stepped isolation structures for semiconductor devices using a spacer techniqueKRONHOLZ STEPHAN·Filed 2012·Application pending·0 cites
- 3438US10062619B2Air gap spacer implant for NZG reliability fixGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·0 cites·20 claims
- 3538US2019043963A1Transistor element with gate electrode of reduced height and raised drain and source regions and method of fabricating the sameGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3637US9281200B2Enhanced patterning uniformity of gate electrodes of a semiconductor device by late gate dopingTHEES HANS-JUERGEN·Filed 2011·Granted Mar 8, 2016·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →