Inventor · disambiguated record
Hai Biao Yao
Also filed as: YAO HAI B · YAO HAI BIAO
7 granted patents·5 pending applications·3 citations·filing 2004–2022
73Inventor score
Top patents by PatentIndex Score
12 records- 0184US11448318B2Seal ring structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Sep 20, 2022·2 cites·14 claims
- 0273US11799031B2Field-effect transistorUNITED MICROELECTRONICS CORP·Filed 2022·Granted Oct 24, 2023·0 cites·1 claims
- 0372US11804550B2Method for fabricating field-effect transistorUNITED MICROELECTRONICS CORP·Filed 2022·Granted Oct 31, 2023·0 cites·10 claims
- 0467US11329161B2Field-effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted May 10, 2022·0 cites·10 claims
- 0565US9620649B1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Apr 11, 2017·1 cites·12 claims
- 0661US11462618B2Semiconductor device with reduced floating body effects and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 4, 2022·0 cites·16 claims
- 0751US2020194555A1Semiconductor device with reduced floating body effects and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 0844US10629748B2Semiconductor device having a ferroelectric material layerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 21, 2020·0 cites·15 claims
- 0935US2019109199A1Oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 1035US2017084614A1Memory cell with oxide semiconductor field effect transistor device integrated thereinUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1134US2018033891A1Oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 1230US2007272955A1Reliable ContactsAGENCY SCIENCE TECH & RES·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →