Inventor · disambiguated record
Heimo Hofer
Also filed as: HOFER HEIMO
10 granted patents·8 pending applications·116 citations·filing 2003–2025
83Inventor score
Top patents by PatentIndex Score
18 records- 0195US7005351B2Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 28, 2006·113 cites·28 claims
- 0275US9455136B2Controlling the reflow behaviour of BPSG films and devices made thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 27, 2016·2 cites·24 claims
- 0372US12166080B2Semiconductor transistor device having a titled body contact area and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0469US9859385B2Processing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jan 2, 2018·1 cites·20 claims
- 0566US12119400B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 15, 2024·0 cites·10 claims
- 0665US11670684B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jun 6, 2023·0 cites·19 claims
- 0759US11316043B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·14 claims
- 0856US12080789B2Semiconductor die and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 3, 2024·0 cites·6 claims
- 0955US10249723B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 2, 2019·0 cites·20 claims
- 1055US2025386556A1Transistor including a silicon layer in a trench structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 1155US2025185288A1Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1254US2024266392A1Semiconductor device and method of fabricating an electrically insulating structure in a trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1353US2018247820A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Application pending·0 cites
- 1452US2024339507A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1549US2017011927A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 1642US2020111896A1Transistor Device and Method for Forming a Recess for a Trench Gate ElectrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Application pending·0 cites
- 1737US8728891B2Method for producing contact openings in a semiconductor body and self-aligned contact structures on a semiconductor bodyHOFER HEIMO·Filed 2012·Granted May 20, 2014·0 cites·20 claims
- 1836US2017236913A1Method of Processing a Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →