Inventor · disambiguated record
Heinz Honigschmid
Also filed as: HOENIGSCHMID HEINZ
40 granted patents·346 citations·filing 1999–2006
97Inventor score
Top patents by PatentIndex Score
40 records- 0189US6353562B2Integrated semiconductor memory with redundant units for memory cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 5, 2002·56 cites·9 claims
- 0285US6741513B2Data memory with a plurality of memory banksINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 25, 2004·38 cites·5 claims
- 0384US6424563B2MRAM memory cellINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 23, 2002·37 cites·4 claims
- 0476US6452852B2Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 17, 2002·24 cites·7 claims
- 0574US6351422B2Integrated memory having a differential sense amplifierINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 26, 2002·21 cites·6 claims
- 0673US6577528B2Circuit configuration for controlling write and read operations in a magnetoresistive memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 10, 2003·21 cites·11 claims
- 0768US6664158B2Ferroelectric memory configuration and a method for producing the configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 16, 2003·11 cites·3 claims
- 0868US6091625AFerroelectric memory and method for preventing aging in a memory cellSIEMENS AG·Filed 1999·Granted Jul 18, 2000·29 cites·8 claims
- 0964US7499344B2Integrated circuit memory having a read circuitINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 3, 2009·5 cites·8 claims
- 1063US6292386B1Integrated memory having cells of the two-transistor/two-capacitor typeINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 18, 2001·13 cites·5 claims
- 1160US6392918B2Circuit configuration for generating a reference voltage for reading a ferroelectric memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 21, 2002·11 cites·3 claims
- 1259US6545526B2Fuse circuit configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 8, 2003·10 cites·4 claims
- 1348US6307771B1Integrated memory having 2-transistor/2-capacitor memory cellsSIEMENS AG·Filed 2000·Granted Oct 23, 2001·6 cites·4 claims
- 1447US6487128B2Integrated memory having memory cells and reference cells, and operating method for such a memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 26, 2002·5 cites·10 claims
- 1547US6424558B2Ferroelectric memory array composed of a multiplicity of memory cells each having at least one selection transistor and one storage capacitor driven via word lines and bit linesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 23, 2002·5 cites·5 claims
- 1645US6477078B2Integrated memory having memory cells that each include a ferroelectric memory transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 5, 2002·6 cites·4 claims
- 1744US6504747B2Integrated memory with plate line segmentsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 7, 2003·4 cites·5 claims
- 1844US6480044B2Semiconductor circuit configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 12, 2002·2 cites·15 claims
- 1944US6295219B1Integrated memoryINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 25, 2001·4 cites·4 claims
- 2042US6803618B2MRAM configuration having selection transistors with a large channel widthINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 12, 2004·3 cites·6 claims
- 2142US6480055B2Decoder element for generating an output signal having three different potentials and an operating method for the decoder elementINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 12, 2002·3 cites·5 claims
- 2242US6459626B1Integrated memory having memory cells and reference cells, and corresponding operating methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 1, 2002·3 cites·5 claims
- 2342US6434039B1Circuit configuration for reading a memory cell having a ferroelectric capacitorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 13, 2002·3 cites·6 claims
- 2441US6137712AFerroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 24, 2000·7 cites·5 claims
- 2540US6538950B2Integrated memory and corresponding operating methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·2 cites·3 claims
- 2639US6816406B2Magnetic memory configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 9, 2004·2 cites·8 claims
- 2739US6507512B2Circuit configuration and method for accelerating aging in an MRAMINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 14, 2003·2 cites·10 claims
- 2838US6657916B2Integrated memory with memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 2, 2003·2 cites·9 claims
- 2937US6430080B1Integrated ferroelectric memory having plate lines selected by a column decoderINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 6, 2002·2 cites·7 claims
- 3037US6396750B2Integrated memory with redundancy and method for repairing an integrated memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 28, 2002·2 cites·13 claims
- 3136US6525974B2Integrated memory with redundancyINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 25, 2003·1 cites·9 claims
- 3236US6294294B1Implantation mask for producing a memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 25, 2001·5 cites·4 claims
- 3335US6445607B2Method for operating an integrated memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 3, 2002·1 cites·3 claims
- 3433US6826075B2Random access semiconductor memory with reduced signal overcouplingINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 30, 2004·0 cites·17 claims
- 3533US6645809B2Process for producing a capacitor configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 11, 2003·0 cites·15 claims
- 3632US6538913B2Method for operating a ferroelectric memory configuration and a ferroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·0 cites·7 claims
- 3732US6442100B2Integrated memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·0 cites·4 claims
- 3832US6392445B2Decoder element for producing an output signal having three different potentialsINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 21, 2002·0 cites·9 claims
- 3931US6515890B2Integrated semiconductor memory having memory cells with a ferroelectric memory propertyINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 4, 2003·0 cites·5 claims
- 4030US6255855B1Integrated circuit having a decoderINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 3, 2001·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →