Inventor · disambiguated record
Heng Wu
Also filed as: WU HENG · WU HENG-CHIA
173 granted patents·30 pending applications·772 citations·filing 2008–2024
99Inventor score
Top patents by PatentIndex Score
203 records- 0199US11251362B2Stacked spin-orbit-torque magnetoresistive random-access memoryIBM·Filed 2020·Granted Feb 15, 2022·9 cites·18 claims
- 0299US11049953B2Nanosheet transistorTESSERA INC·Filed 2020·Granted Jun 29, 2021·6 cites·21 claims
- 0399US10229985B1Vertical field-effect transistor with uniform bottom spacerIBM·Filed 2017·Granted Mar 12, 2019·284 cites·20 claims
- 0498US11177258B2Stacked nanosheet CFET with gate all around structureIBM·Filed 2020·Granted Nov 16, 2021·15 cites·20 claims
- 0598US10566246B1Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devicesIBM·Filed 2018·Granted Feb 18, 2020·41 cites·16 claims
- 0698US10522649B2Inverse T-shaped contact structures having air gap spacersIBM·Filed 2018·Granted Dec 31, 2019·23 cites·10 claims
- 0798US10243061B1Nanosheet transistorIBM·Filed 2017·Granted Mar 26, 2019·28 cites·13 claims
- 0898US10236364B1Tunnel transistorIBM·Filed 2018·Granted Mar 19, 2019·26 cites·10 claims
- 0998US10056289B1Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2017·Granted Aug 21, 2018·44 cites·14 claims
- 1097US10985064B2Buried power and ground in stacked vertical transport field effect transistorsIBM·Filed 2019·Granted Apr 20, 2021·19 cites·19 claims
- 1197US10957778B2Formation of air gap spacers for reducing parasitic capacitanceIBM·Filed 2020·Granted Mar 23, 2021·4 cites·20 claims
- 1297US10930563B2Formation of stacked nanosheet semiconductor devicesIBM·Filed 2020·Granted Feb 23, 2021·4 cites·16 claims
- 1397US10797163B1Leakage control for gate-all-around field-effect transistor devicesIBM·Filed 2019·Granted Oct 6, 2020·26 cites·19 claims
- 1497US10388569B1Formation of stacked nanosheet semiconductor devicesIBM·Filed 2018·Granted Aug 20, 2019·16 cites·10 claims
- 1597US10134859B1Transistor with asymmetric spacersIBM·Filed 2017·Granted Nov 20, 2018·16 cites·5 claims
- 1697US10084094B1Wrapped source/drain contacts with enhanced areaIBM·Filed 2017·Granted Sep 25, 2018·17 cites·5 claims
- 1797US10020381B1Embedded bottom metal contact formed by a self-aligned contact process for vertical transistorsIBM·Filed 2017·Granted Jul 10, 2018·17 cites·4 claims
- 1896US10249755B1Transistor with asymmetric source/drain overlapIBM·Filed 2018·Granted Apr 2, 2019·12 cites·4 claims
- 1995US10727315B2Nanosheet transistorTESSERA INC·Filed 2019·Granted Jul 28, 2020·7 cites·9 claims
- 2094US11944013B2Magnetic tunnel junction device with minimum stray fieldIBM·Filed 2021·Granted Mar 26, 2024·3 cites·9 claims
- 2193US11557651B2Nanosheet transistors with inner airgapsIBM·Filed 2020·Granted Jan 17, 2023·2 cites·20 claims
- 2293US10332983B1Vertical field-effect transistors including uniform gate lengthsIBM·Filed 2018·Granted Jun 25, 2019·8 cites·20 claims
- 2392US11362193B2Inverse T-shaped contact structures having air gap spacersIBM·Filed 2019·Granted Jun 14, 2022·7 cites·12 claims
- 2492US11189713B2Nanosheet transistor having wrap-around bottom isolationIBM·Filed 2020·Granted Nov 30, 2021·3 cites·13 claims
- 2592US10381262B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2018·Granted Aug 13, 2019·6 cites·18 claims
- 2692US9947767B1Self-limited inner spacer formation for gate-all-around field effect transistorsIBM·Filed 2017·Granted Apr 17, 2018·7 cites·9 claims
- 2791US11289573B2Contact resistance reduction in nanosheet device structureIBM·Filed 2019·Granted Mar 29, 2022·5 cites·20 claims
- 2891US11282838B2Stacked gate structuresIBM·Filed 2020·Granted Mar 22, 2022·2 cites·16 claims
- 2991US11004856B1Stacked vertical transistor memory cell with epi connectionsIBM·Filed 2019·Granted May 11, 2021·6 cites·20 claims
- 3091US10910470B1Nanosheet transistors with inner airgapsIBM·Filed 2019·Granted Feb 2, 2021·5 cites·18 claims
- 3190US10692778B2Gate-all-around FETs having uniform threshold voltageIBM·Filed 2018·Granted Jun 23, 2020·4 cites·15 claims
- 3289US11183577B2Formation of air gap spacers for reducing parasitic capacitanceIBM·Filed 2020·Granted Nov 23, 2021·2 cites·16 claims
- 3389US11177367B2Self-aligned bottom spacer EPI last flow for VTFETIBM·Filed 2020·Granted Nov 16, 2021·2 cites·17 claims
- 3489US11069679B2Reducing gate resistance in stacked vertical transport field effect transistorsIBM·Filed 2019·Granted Jul 20, 2021·4 cites·8 claims
- 3589US10332999B1Method and structure of forming fin field-effect transistor without strain relaxationIBM·Filed 2018·Granted Jun 25, 2019·5 cites·20 claims
- 3688US12142526B2Stacked device with buried interconnectIBM·Filed 2022·Granted Nov 12, 2024·1 cites·20 claims
- 3788US11901438B2Nanosheet transistorADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 3888US11189725B2VTFET with cell height constraintsIBM·Filed 2020·Granted Nov 30, 2021·2 cites·18 claims
- 3988US10249731B1Vertical FET with sharp junctionsIBM·Filed 2017·Granted Apr 2, 2019·4 cites·15 claims
- 4087US12369379B2Nanosheet transistorADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 4187US11729996B2High retention eMRAM using VCMA-assisted writingIBM·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 4287US11011617B2Formation of a partial air-gap spacerIBM·Filed 2018·Granted May 18, 2021·4 cites·15 claims
- 4387US10950492B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2019·Granted Mar 16, 2021·3 cites·15 claims
- 4486US12471364B2Hybrid stacked field effect transistorsIBM·Filed 2021·Granted Nov 11, 2025·1 cites·11 claims
- 4586US12087770B2Complementary field effect transistor devicesIBM·Filed 2021·Granted Sep 10, 2024·1 cites·8 claims
- 4686US11164870B2Stacked upper fin and lower fin transistor with separate gateIBM·Filed 2019·Granted Nov 2, 2021·4 cites·6 claims
- 4786US11075334B2Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrodeIBM·Filed 2019·Granted Jul 27, 2021·4 cites·20 claims
- 4885US11489009B2Integrating embedded memory on CMOS logic using thin film transistorsIBM·Filed 2020·Granted Nov 1, 2022·2 cites·15 claims
- 4985US11380843B2Phase change memory using multiple stacks of PCM materialsIBM·Filed 2020·Granted Jul 5, 2022·2 cites·13 claims
- 5085US10943989B2Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimizationIBM·Filed 2019·Granted Mar 9, 2021·3 cites·20 claims
Showing the top 50 of 203 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →