Inventor · disambiguated record
Hidenobu Fukutome
Also filed as: FUKUTOME HIDENOBU
19 granted patents·10 pending applications·101 citations·filing 2003–2025
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9FUJITSU SEMICONDUCTOR LTD8FUKUTOME HIDENOBU4MAEDA SHIGENOBU4FUJITSU LTD3
Top patents by PatentIndex Score
29 records- 0195US9276116B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·21 cites·8 claims
- 0293US9240481B2Semiconductor device having embedded strain-inducing patternMAEDA SHIGENOBU·Filed 2015·Granted Jan 19, 2016·8 cites·2 claims
- 0392US8884298B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameMAEDA SHIGENOBU·Filed 2013·Granted Nov 11, 2014·11 cites·30 claims
- 0490US9842909B2Semiconductor device and fabricating method thereofMAEDA SHIGENOBU·Filed 2016·Granted Dec 12, 2017·6 cites·7 claims
- 0587US7989299B2Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Aug 2, 2011·6 cites·17 claims
- 0686US8962435B2Method of forming semiconductor device having embedded strain-inducing patternMAEDA SHIGENOBU·Filed 2014·Granted Feb 24, 2015·5 cites·4 claims
- 0784US6977417B2Semiconductor device and method of fabricating the sameFUJITSU LTD·Filed 2003·Granted Dec 20, 2005·29 cites·7 claims
- 0879US10332878B2Semiconductor device with impurity-doped region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·2 cites·17 claims
- 0976US7592243B2Method of suppressing diffusion in a semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Sep 22, 2009·5 cites·11 claims
- 1070US9093529B2Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor deviceFUKUTOME HIDENOBU·Filed 2007·Granted Jul 28, 2015·2 cites·19 claims
- 1165US7898036B2Semiconductor device and process for manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Mar 1, 2011·3 cites·8 claims
- 1262US7977194B2Method for fabricating semiconductor device with fully silicided gate electrodeFUJITSU SEMICONDUCTOR LTD·Filed 2006·Granted Jul 12, 2011·3 cites·13 claims
- 1359US9825171B2Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Nov 21, 2017·0 cites·15 claims
- 1456US9437737B2Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Sep 6, 2016·0 cites·10 claims
- 1556US2025126860A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1654US2024413204A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1753US2024203831A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1853US2018294195A1Semiconductor device and method of manufacturing the semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2018·Application pending·0 cites
- 1952US9559101B2Semiconductor device with impurity-doped region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 31, 2017·0 cites·12 claims
- 2052US8546247B2Manufacturing method of semiconductor device with amorphous silicon layer formationFUKUTOME HIDENOBU·Filed 2009·Granted Oct 1, 2013·0 cites·9 claims
- 2152US2019035788A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 2251US9786565B2Semiconductor device and method of manufacturing the semiconductor deviceFUKUTOME HIDENOBU·Filed 2009·Granted Oct 10, 2017·0 cites·10 claims
- 2351US2017365528A1Semiconductor device and method of manufacturing the semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2017·Application pending·0 cites
- 2450US2008009111A1Manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2007·Application pending·0 cites
- 2549US2025359259A1Semiconductor device including a field effect transistor and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2646US2017162574A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 2745US2005285203A1Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor deviceFUJITSU LTD·Filed 2004·Application pending·0 cites
- 2839US8362530B2Semiconductor device including MISFET and its manufacture methodFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jan 29, 2013·0 cites·11 claims
- 2937US8399345B2Semiconductor device having nickel silicide layerFUKUTOME HIDENOBU·Filed 2010·Granted Mar 19, 2013·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →