Inventor · disambiguated record
Hiroshi Kujirai
Also filed as: KUJIRAI HIROSHI
18 granted patents·3 pending applications·72 citations·filing 1991–2011
92Inventor score
Top patents by PatentIndex Score
21 records- 0175US7816208B2Method of manufacturing semiconductor device having trench-gate transistorELPIDA MEMORY INC·Filed 2007·Granted Oct 19, 2010·7 cites·19 claims
- 0274US8173515B2Method for manufacturing semiconductor deviceNAKAMORI TOSHIYA·Filed 2009·Granted May 8, 2012·10 cites·19 claims
- 0371US6987043B2Method of manufacturing semiconductor device having a plurality of trench-type data storage capacitorsHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jan 17, 2006·15 cites·17 claims
- 0467US8426903B2Semiconductor device and method of manufacturing sameKUJIRAI HIROSHI·Filed 2010·Granted Apr 23, 2013·3 cites·20 claims
- 0563US7649256B2Semiconductor chip having pollished and ground bottom surface portionsELPIDA MEMORY INC·Filed 2005·Granted Jan 19, 2010·2 cites·14 claims
- 0663US6861692B2Method of manufacturing semiconductor device and semiconductor deviceHITACHI LTD·Filed 2003·Granted Mar 1, 2005·9 cites·8 claims
- 0759US6828242B2Method for manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 2002·Granted Dec 7, 2004·6 cites·11 claims
- 0857US8431986B2Semiconductor device having three-dimensional transistor and manufacturing method thereofKUJIRAI HIROSHI·Filed 2011·Granted Apr 30, 2013·1 cites·5 claims
- 0953US7687849B2Method for manufacturing semiconductor integrated circuit deviceELPIDA MEMORY INC·Filed 2008·Granted Mar 30, 2010·0 cites·15 claims
- 1053US7244977B2Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage deviceELPIDA MEMORY INC·Filed 2002·Granted Jul 17, 2007·5 cites·2 claims
- 1151US7417291B2Method for manufacturing semiconductor integrated circuit deviceELPIDA MEMORY INC·Filed 2007·Granted Aug 26, 2008·0 cites·14 claims
- 1247US8013386B2Semiconductor device having trench-gate transistor with parallel channel regions in gate trenchELPIDA MEMORY INC·Filed 2006·Granted Sep 6, 2011·0 cites·9 claims
- 1347US7224034B2Method for manufacturing semiconductor integrated circuit deviceELPIDA MEMORY INC·Filed 2004·Granted May 29, 2007·2 cites·9 claims
- 1447US2008023757A1Semiconductor device having fin-field effect transistor and manufacturing method thereofELPIDA MEMORY INC·Filed 2007·Application pending·0 cites
- 1546US7892925B2Method of forming semiconductor device having three-dimensional channel structureELPIDA MEMORY INC·Filed 2008·Granted Feb 22, 2011·0 cites·23 claims
- 1645US7923773B2Semiconductor device, manufacturing method thereof, and data processing systemELPIDA MEMORY INC·Filed 2008·Granted Apr 12, 2011·0 cites·14 claims
- 1744US7867856B2Method of manufacturing a semiconductor device having fin-field effect transistorELPIDA MEMORY INC·Filed 2010·Granted Jan 11, 2011·0 cites·10 claims
- 1843US2007202638A1Vertical misfet manufacturing method, vertical misfet, semiconductor memory device manufacturing method, and semiconductor memory deviceTABATA TSUYOSHI·Filed 2007·Application pending·0 cites
- 1942US8455944B2Semiconductor device having a trench-gate transistorKUJIRAI HIROSHI·Filed 2011·Granted Jun 4, 2013·0 cites·10 claims
- 2038US5173155AVacuum boiler type evaporatorTOKYO GAS CO LTD·Filed 1991·Granted Dec 22, 1992·12 cites·2 claims
- 2133US2002033505A1Semiconductor integrated circuit device and method of manufacturing the sameHITACHI LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →