Inventor · disambiguated record
Hoi-Sung Chung
Also filed as: CHUNG HOI-SUNG
38 granted patents·7 pending applications·113 citations·filing 2009–2024
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD21SHIN DONG-SUK7KIM DONG HYUK5APPLIED MATERIALS INC3CHUNG HOI-SUNG3
Top patents by PatentIndex Score
45 records- 0196US10297601B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 21, 2019·19 cites·19 claims
- 0292US9257520B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Feb 9, 2016·7 cites·9 claims
- 0391US9985036B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·6 cites·20 claims
- 0490US9768300B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 19, 2017·5 cites·20 claims
- 0590US9136176B2Semiconductor devices including an epitaxial layer with a slanted surfaceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 15, 2015·7 cites·21 claims
- 0689US9214530B2Methods of forming semiconductor devices including a stressor in a recessSHIN DONG-SUK·Filed 2013·Granted Dec 15, 2015·6 cites·30 claims
- 0789US9129952B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2013·Granted Sep 8, 2015·8 cites·30 claims
- 0888US8921192B2Semiconductor devices and methods of fabricating the sameKIM DONG HYUK·Filed 2012·Granted Dec 30, 2014·8 cites·12 claims
- 0987US9502563B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·4 cites·28 claims
- 1085US9236475B2Semiconductor devices and methods of fabricating the sameKIM DONG HYUK·Filed 2015·Granted Jan 12, 2016·3 cites·29 claims
- 1184US9741855B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·20 claims
- 1283US8907426B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·5 cites·20 claims
- 1383US8900942B2Semiconductor devices and methods of fabricating the sameKIM DONG HYUK·Filed 2012·Granted Dec 2, 2014·4 cites·20 claims
- 1482US8551846B2Methods for fabricating semiconductor devicesKIM DONG HYUK·Filed 2012·Granted Oct 8, 2013·6 cites·15 claims
- 1582US8207040B2Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regionsCHUNG HOI-SUNG·Filed 2011·Granted Jun 26, 2012·6 cites·17 claims
- 1680US8648424B2Semiconductor device including transistors having embedded source/drain regions each including upper and lower main layers comprising germaniumCHUNG HOI-SUNG·Filed 2012·Granted Feb 11, 2014·6 cites·20 claims
- 1778US8426926B2Semiconductor devices having field effect transistors with epitaxial patterns in recessed regionsSHIN DONGSUK·Filed 2011·Granted Apr 23, 2013·6 cites·19 claims
- 1876US12473644B2Growth of thin oxide layer with silicon nitride and conversionAPPLIED MATERIALS INC·Filed 2024·Granted Nov 18, 2025·0 cites·23 claims
- 1973US9537009B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Jan 3, 2017·1 cites·30 claims
- 2069US8637373B2Transistors and methods of manufacturing the sameCHUNG HOI-SUNG·Filed 2012·Granted Jan 28, 2014·2 cites·20 claims
- 2166US8937343B2Semiconductor device including transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 20, 2015·1 cites·12 claims
- 2264US2025351329A1Non-line-of-sight junction formationAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2364US2025246426A1Growth of thin oxide layer in vertical channel structureAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2462US8703592B2Methods of forming semiconductor devices having faceted semiconductor patternsKIM MYUNG-SUN·Filed 2011·Granted Apr 22, 2014·1 cites·19 claims
- 2559US11469237B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 11, 2022·0 cites·15 claims
- 2658US9082874B2Semiconductor device including transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 14, 2015·0 cites·8 claims
- 2757US9640658B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 2, 2017·0 cites·30 claims
- 2857US9520497B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Dec 13, 2016·0 cites·30 claims
- 2957US9397216B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Jul 19, 2016·0 cites·20 claims
- 3056US12150391B2Metal oxide liner for cross-point phase change memory cellINTEL CORP·Filed 2020·Granted Nov 19, 2024·0 cites·20 claims
- 3156US9324834B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·0 cites·14 claims
- 3256US2016218214A1Semiconductor devices and methods of fabricating the sameKIM DONG HYUK·Filed 2016·Application pending·0 cites
- 3355US9548301B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 17, 2017·0 cites·22 claims
- 3455US9178060B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 3, 2015·0 cites·15 claims
- 3555US9023718B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 5, 2015·0 cites·4 claims
- 3649US2010171181A1Method of forming a semiconductor device having an epitaxial source/drainSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3748US9299836B2Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 29, 2016·0 cites·8 claims
- 3848US2014087537A1Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3946US8673747B2Method of fabricating semiconductor deviceDO JIN-HO·Filed 2011·Granted Mar 18, 2014·0 cites·4 claims
- 4045US10892263B2Methods of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·0 cites·20 claims
- 4145US2022102631A1Semiconductor fabrication method and semiconductor device including amorphous silicon-containing liner on pillar sidewalls thereofINTEL CORP·Filed 2020·Application pending·0 cites
- 4242US8450125B2Methods of evaluating epitaxial growth and methods of forming an epitaxial layerSHIN DONG-SUK·Filed 2011·Granted May 28, 2013·0 cites·18 claims
- 4341US11037991B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·17 claims
- 4437US2010233864A1Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4533US8575705B2Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the sameLIM HAJIN·Filed 2010·Granted Nov 5, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →