Inventor · disambiguated record
Hoon Lim
Also filed as: LIM HOON · LIM HOON WEI
32 granted patents·12 pending applications·207 citations·filing 1999–2021
96Inventor score
Top patents by PatentIndex Score
44 records- 0193US7315466B2Semiconductor memory device and method for arranging and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·27 cites·14 claims
- 0291US7825472B2Semiconductor device having a plurality of stacked transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·9 claims
- 0390US7982221B2Semiconductor memory device having three dimensional structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 19, 2011·15 cites·11 claims
- 0490US7719033B2Semiconductor devices having thin film transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 18, 2010·20 cites·15 claims
- 0582US7589992B2Semiconductor device having three dimensional structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 15, 2009·7 cites·43 claims
- 0681US10269958B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 23, 2019·4 cites·20 claims
- 0781US7417286B2Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·9 cites·11 claims
- 0880US6399451B1Semiconductor device having gate spacer containing conductive layer and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 4, 2002·48 cites·11 claims
- 0978US7432560B2Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·8 cites·11 claims
- 1076US7247528B2Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniquesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·4 cites·33 claims
- 1175US7994582B2Stacked load-less static random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·6 cites·10 claims
- 1274US7312110B2Methods of fabricating semiconductor devices having thin film transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 25, 2007·6 cites·50 claims
- 1372US8154910B2Full CMOS SRAMPARK HAN-BYUNG·Filed 2010·Granted Apr 10, 2012·4 cites·26 claims
- 1471US9978865B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·2 cites·19 claims
- 1571US8291232B2Method and a system for a secure execution of workflow tasks of a workflow in a decentralized workflow systemLIM HOON WEI·Filed 2010·Granted Oct 16, 2012·3 cites·18 claims
- 1671US7592625B2Semiconductor transistor with multi-level transistor structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·3 cites·13 claims
- 1767US7978561B2Semiconductor memory devices having vertically-stacked transistors thereinSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·3 cites·14 claims
- 1863US8916941B2Semiconductor device having silicide on gate sidewalls in isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 23, 2014·1 cites·11 claims
- 1961US7473590B2Semiconductor device having body contact through gate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 6, 2009·2 cites·21 claims
- 2060US7927932B2Semiconductor device having a plurality of stacked transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Apr 19, 2011·1 cites·12 claims
- 2159US7193276B2Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·5 cites·23 claims
- 2259US2021220256A1Hair growth promoting capacity of conditioned media of stimulated stem cells and use thereofMEDIPOST CO LTD·Filed 2021·Application pending·0 cites
- 2356US9281377B2Semiconductor device having silicide on gate sidewalls in isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 8, 2016·0 cites·7 claims
- 2456US8227919B2Interconnection structure and electronic device employing the samePARK HAN-BYUNG·Filed 2009·Granted Jul 24, 2012·1 cites·17 claims
- 2552US7485535B2Methods of fabricating semiconductor devices with a source/drain formed on a recessed portion of an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 3, 2009·0 cites·29 claims
- 2652US2018008531A1Capability of small-sized stem cells to stimulate hair growth and use thereofMEDIPOST CO LTD·Filed 2017·Application pending·0 cites
- 2751US8084306B2Methods of forming semiconductor devices having self-aligned bodiesJEONG JAE-HUN·Filed 2009·Granted Dec 27, 2011·0 cites·5 claims
- 2850US8312277B2Method and system for secure communication between computersLIM HOON WEI·Filed 2009·Granted Nov 13, 2012·0 cites·17 claims
- 2950US2007241335A1Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques and semiconductor integrated circuits fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3049US8799663B2Method and a system for a secure execution of workflow tasks of a workflow in a decentralized workflow systemLIM HOON WEI·Filed 2012·Granted Aug 5, 2014·0 cites·18 claims
- 3149US7141851B2Transistors having a recessed channel regionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·3 cites·13 claims
- 3248US7405450B2Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereonSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 29, 2008·3 cites·28 claims
- 3348US2011266623A1Semiconductor Memory Device Having Three Dimensional StructureHAN GONG-HEUM·Filed 2011·Application pending·0 cites
- 3445US2016000698A1Capability of small-sized stem cells to stimulate hair growth and use thereofMEDIPOST CO LTD·Filed 2015·Application pending·0 cites
- 3545US2010224942A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 3644US2006113599A1Semiconductor devices having self-aligned bodies and methods of forming the sameJEONG JAE-HUN·Filed 2005·Application pending·0 cites
- 3743US12303534B2Pharmaceutical composition comprising mesenchymal stem cells as effective ingredient for prevention or treatment of inflammatory diseaseMEDIPOST CO LTD·Filed 2019·Granted May 20, 2025·0 cites·8 claims
- 3843US7927734B2Lithium secondary battery and fabrication method thereofSAMSUNG SDI CO LTD·Filed 2003·Granted Apr 19, 2011·0 cites·14 claims
- 3943US2008073717A1Semiconductor devices having substrate plug and methods of forming the sameHA TAE-HONG·Filed 2007·Application pending·0 cites
- 4042US2006270138A1Transistors having a recessed channel region and methods of fabricating the sameJANG YOUNG-CHUL·Filed 2006·Application pending·0 cites
- 4141US2009224330A1Semiconductor Memory Device and Method for Arranging and Manufacturing the SameHONG CHANG MIN·Filed 2009·Application pending·0 cites
- 4238US2020401726A1System and method for private integration of datasetsSINGAPORE TELECOMMUNICATIONS LTD·Filed 2017·Application pending·0 cites
- 4337US2016000699A1Hair growth promoting capacity of conditioned media of stimulated stem cells and use thereofMEDIPOST CO LTD·Filed 2015·Application pending·0 cites
- 4422USD733568SBottle for packagingLIM JUNG MIN·Filed 2013·Granted Jul 7, 2015·1 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →