Inventor · disambiguated record
Hongching Shan
Also filed as: SHAN HONGCHING
34 granted patents·4,096 citations·filing 1994–2006
99Inventor score
Top patents by PatentIndex Score
34 records- 0199US5683517APlasma reactor with programmable reactant gas distributionAPPLIED MATERIALS INC·Filed 1995·Granted Nov 4, 1997·631 cites·18 claims
- 0298US6074514AHigh selectivity etch using an external plasma dischargeAPPLIED MATERIALS INC·Filed 1998·Granted Jun 13, 2000·504 cites·22 claims
- 0398US5605637AAdjustable dc bias control in a plasma reactorAPPLIED MATERIALS INC·Filed 1994·Granted Feb 25, 1997·231 cites·21 claims
- 0497US6403491B1Etch method using a dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2000·Granted Jun 11, 2002·396 cites·24 claims
- 0597US5674321AMethod and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Oct 7, 1997·150 cites·9 claims
- 0696US6716302B2Dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2002·Granted Apr 6, 2004·91 cites·18 claims
- 0796US6568346B2Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supplyAPPLIED MATERIALS INC·Filed 2001·Granted May 27, 2003·66 cites·22 claims
- 0896US6189484B1Plasma reactor having a helicon wave high density plasma sourceAPPLIED MATERIALS INC·Filed 1999·Granted Feb 20, 2001·116 cites·44 claims
- 0996US5843847AMethod for etching dielectric layers with high selectivity and low microloadingAPPLIED MATERIALS INC·Filed 1996·Granted Dec 1, 1998·319 cites·51 claims
- 1095US6825618B2Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supplyFiled 2003·Granted Nov 30, 2004·60 cites·4 claims
- 1195US6284093B1Shield or ring surrounding semiconductor workpiece in plasma chamberAPPLIED MATERIALS INC·Filed 2000·Granted Sep 4, 2001·133 cites·46 claims
- 1295US6273022B1Distributed inductively-coupled plasma sourceAPPLIED MATERIALS INC·Filed 1998·Granted Aug 14, 2001·96 cites·42 claims
- 1394US6797639B2Dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2002·Granted Sep 28, 2004·63 cites·30 claims
- 1493US6432259B1Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution platesAPPLIED MATERIALS INC·Filed 1999·Granted Aug 13, 2002·104 cites·101 claims
- 1593US5948168ADistributed microwave plasma reactor for semiconductor processingAPPLIED MATERIALS INC·Filed 1997·Granted Sep 7, 1999·83 cites·29 claims
- 1692US6113731AMagnetically-enhanced plasma chamber with non-uniform magnetic fieldAPPLIED MATERIALS INC·Filed 1997·Granted Sep 5, 2000·152 cites·42 claims
- 1790US6513452B2Adjusting DC bias voltage in plasma chamberAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·29 cites·20 claims
- 1890US6387288B1High selectivity etch using an external plasma dischargeAPPLIED MATERIALS INC·Filed 2000·Granted May 14, 2002·31 cites·8 claims
- 1990US5740009AApparatus for improving wafer and chuck edge protectionAPPLIED MATERIALS INC·Filed 1996·Granted Apr 14, 1998·117 cites·24 claims
- 2089US6689249B2Shield or ring surrounding semiconductor workpiece in plasma chamberAPPLIED MATERIALS INC·Filed 2001·Granted Feb 10, 2004·48 cites·20 claims
- 2189US6174451B1Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbonsAPPLIED MATERIALS INC·Filed 1998·Granted Jan 16, 2001·94 cites·52 claims
- 2289US5814563AMethod for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gasAPPLIED MATERIALS INC·Filed 1996·Granted Sep 29, 1998·110 cites·13 claims
- 2389US5702530ADistributed microwave plasma reactor for semiconductor processingAPPLIED MATERIALS INC·Filed 1995·Granted Dec 30, 1997·76 cites·64 claims
- 2488US6022446AShallow magnetic fields for generating circulating electrons to enhance plasma processingFiled 1995·Granted Feb 8, 2000·63 cites·34 claims
- 2585US5865937ABroad-band adjustable power ratio phase-inverting plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Feb 2, 1999·48 cites·36 claims
- 2684US7232767B2Slotted electrostatic shield modification for improved etch and CVD process uniformityMATTSON TECH INC·Filed 2004·Granted Jun 19, 2007·25 cites·20 claims
- 2782US6221782B1Adjusting DC bias voltage in plasma chamberAPPLIED MATERIALS INC·Filed 1999·Granted Apr 24, 2001·31 cites·12 claims
- 2882US6076482AThin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusionAPPLIED MATERIALS INC·Filed 1997·Granted Jun 20, 2000·41 cites·36 claims
- 2980US5514247AProcess for plasma etching of viasAPPLIED MATERIALS INC·Filed 1994·Granted May 7, 1996·72 cites·26 claims
- 3077US6613691B1Highly selective oxide etch process using hexafluorobutadieneAPPLIED MATERIALS INC·Filed 2000·Granted Sep 2, 2003·17 cites·13 claims
- 3173US5585012ASelf-cleaning polymer-free top electrode for parallel electrode etch operationAPPLIED MATERIALS INC·Filed 1994·Granted Dec 17, 1996·52 cites·9 claims
- 3270US5989349ADiagnostic pedestal assembly for a semiconductor wafer processing systemAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·36 cites·41 claims
- 3363US8413604B2Slotted electrostatic shield modification for improved etch and CVD process uniformityGEORGE RENE·Filed 2006·Granted Apr 9, 2013·2 cites·11 claims
- 3462US7105442B2Ashable layers for reducing critical dimensions of integrated circuit featuresAPPLIED MATERIALS INC·Filed 2002·Granted Sep 12, 2006·9 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →