Inventor · disambiguated record
Hongqing Shan
Also filed as: SHAN HONGQING
23 granted patents·8 pending applications·1,714 citations·filing 1999–2024
97Inventor score
Files withAPPLIED MATERIALS INC18MATTSON TECH INC2APPLLIED MATERIALS INC1FIRST SOLAR INC1NICE Solar Energy GmbH1
Top patents by PatentIndex Score
31 records- 0197US7316761B2Apparatus for uniformly etching a dielectric layerAPPLIED MATERIALS INC·Filed 2003·Granted Jan 8, 2008·178 cites·20 claims
- 0296US6232236B1Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing systemAPPLIED MATERIALS INC·Filed 1999·Granted May 15, 2001·134 cites·32 claims
- 0395US6602434B1Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process windowAPPLIED MATERIALS INC·Filed 1999·Granted Aug 5, 2003·280 cites·54 claims
- 0494US6829056B1Monitoring dimensions of features at different locations in the processing of substratesFiled 2003·Granted Dec 7, 2004·107 cites·19 claims
- 0594US6797189B2Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbonFiled 1999·Granted Sep 28, 2004·217 cites·29 claims
- 0693US6451703B1Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gasAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·96 cites·47 claims
- 0793US6440864B1Substrate cleaning processAPPLIED MATERIALS INC·Filed 2000·Granted Aug 27, 2002·119 cites·46 claims
- 0892US7658586B2Advanced low cost high throughput processing platformMATTSON TECH INC·Filed 2005·Granted Feb 9, 2010·20 cites·32 claims
- 0991US7563068B2Low cost high throughput processing platformMATTSON TECH INC·Filed 2007·Granted Jul 21, 2009·16 cites·25 claims
- 1091US6326307B1Plasma pretreatment of photoresist in an oxide etch processAPPLLIED MATERIALS INC·Filed 1999·Granted Dec 4, 2001·201 cites·28 claims
- 1190US6362109B1Oxide/nitride etching having high selectivity to photoresistAPPLIED MATERIALS INC·Filed 2000·Granted Mar 26, 2002·73 cites·23 claims
- 1288US6521082B1Magnetically enhanced plasma apparatus and method with enhanced plasma uniformity and enhanced ion energy controlAPPLIED MATERIALS INC·Filed 2002·Granted Feb 18, 2003·28 cites·12 claims
- 1387US6913652B2Gas flow division in a wafer processing system having multiple chambersAPPLIED MATERIALS INC·Filed 2002·Granted Jul 5, 2005·32 cites·15 claims
- 1487US6387287B1Process for etching oxide using a hexafluorobutadiene and manifesting a wide process windowAPPLIED MATERIALS INC·Filed 1999·Granted May 14, 2002·94 cites·18 claims
- 1584US6613689B2Magnetically enhanced plasma oxide etch using hexafluorobutadieneAPPLIED MATERIALS INC·Filed 2002·Granted Sep 2, 2003·38 cites·52 claims
- 1679US6849193B2Highly selective process for etching oxide over nitride using hexafluorobutadieneFiled 2002·Granted Feb 1, 2005·23 cites·41 claims
- 1777US6831742B1Monitoring substrate processing using reflected radiationAPPLIED MATERIALS INC·Filed 2000·Granted Dec 14, 2004·17 cites·99 claims
- 1876US6863835B1Magnetic barrier for plasma in chamber exhaustFiled 2000·Granted Mar 8, 2005·10 cites·33 claims
- 1976US6686293B2Method of etching a trench in a silicon-containing dielectric materialAPPLIED MATERIALS INC·Filed 2002·Granted Feb 3, 2004·18 cites·46 claims
- 2069US2024322057A1Method of patterning a thin-film photovoltaic layer stackFIRST SOLAR INC·Filed 2024·Application pending·0 cites
- 2164US6773544B2Magnetic barrier for plasma in chamber exhaustFiled 2001·Granted Aug 10, 2004·5 cites·17 claims
- 2260US2007091535A1Temperature controlled semiconductor processing chamber linerAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2357US6905624B2Interferometric endpoint detection in a substrate etching processAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·6 cites·11 claims
- 2452US12009445B2Method of patterning a thin-film photovoltaic layer stackNICE Solar Energy GmbH·Filed 2021·Granted Jun 11, 2024·0 cites·23 claims
- 2545US8668422B2Low cost high throughput processing platformNIEWMIERZYCKI LESZEK·Filed 2004·Granted Mar 11, 2014·2 cites·27 claims
- 2644US2003141178A1Energizing gas for substrate processing with shockwavesAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 2744US2005003675A1Dielectric etch chamber with expanded process windowFiled 2004·Application pending·0 cites
- 2842US2002069970A1Temperature controlled semiconductor processing chamber linerAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 2940US2001009139A1Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing systemFiled 2001·Application pending·0 cites
- 3037US2002101167A1Capacitively coupled reactive ion etch plasma reactor with overhead high density plasma source for chamber dry cleaningAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3137US2004011464A1Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injectionAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →