Inventor · disambiguated record
Hsiao-Wei Chang
Also filed as: CHANG HSIAO WEI
3 granted patents·3 pending applications·11 citations·filing 2007–2019
63Inventor score
Top patents by PatentIndex Score
6 records- 0189US11011388B2Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etchingLAM RES CORP·Filed 2019·Granted May 18, 2021·7 cites·18 claims
- 0281US11469079B2Ultrahigh selective nitride etch to form FinFET devicesLAM RES CORP·Filed 2017·Granted Oct 11, 2022·3 cites·13 claims
- 0369US10276398B2High aspect ratio selective lateral etch using cyclic passivation and etchingLAM RES CORP·Filed 2017·Granted Apr 30, 2019·1 cites·21 claims
- 0449US2009211596A1Method of post etch polymer residue removalLAM RES CORP·Filed 2007·Application pending·0 cites
- 0543US2012115332A1Method of Post Etch Polymer Residue RemovalYUN SEOKMIN·Filed 2012·Application pending·0 cites
- 0626US2012109616A1Method to synchronize and synthesize bus transaction traces for an un-timed virtual environmentCHANG HSIAO-WEI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →