Inventor · disambiguated record
Hsiang-Lan Lung
Also filed as: LUNG HSIANG L · LUNG HSIANG-LAN
321 granted patents·32 pending applications·8,577 citations·filing 2000–2024
99Inventor score
Top patents by PatentIndex Score
353 records- 0199US9659998B1Memory having an interlayer insulating structure with different thermal resistanceMACRONIX INT CO LTD·Filed 2016·Granted May 23, 2017·54 cites·20 claims
- 0299US8426294B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2012·Granted Apr 23, 2013·165 cites·18 claims
- 0399US8203187B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2010·Granted Jun 19, 2012·309 cites·24 claims
- 0499US7786460B2Phase change memory device and manufacturing methodMACRONIX INT CO LTD·Filed 2007·Granted Aug 31, 2010·259 cites·23 claims
- 0599US7420242B2Stacked bit line dual word line nonvolatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Sep 2, 2008·85 cites·13 claims
- 0699US7394088B2Thermally contained/insulated phase change memory device and method (combined)MACRONIX INT CO LTD·Filed 2006·Granted Jul 1, 2008·159 cites·22 claims
- 0799US7321130B2Thin film fuse phase change RAM and manufacturing methodMACRONIX INT CO LTD·Filed 2005·Granted Jan 22, 2008·171 cites·17 claims
- 0899US7238994B2Thin film plate phase change ram circuit and manufacturing methodMACRONIX INT CO LTD·Filed 2005·Granted Jul 3, 2007·143 cites·23 claims
- 0999US7220983B2Self-aligned small contact phase-change memory method and deviceMACRONIX INT CO LTD·Filed 2004·Granted May 22, 2007·286 cites·16 claims
- 1099US6864503B2Spacer chalcogenide memory method and deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 8, 2005·380 cites·17 claims
- 1199US6579760B1Self-aligned, programmable phase change memoryMACRONIX INT CO LTD·Filed 2002·Granted Jun 17, 2003·510 cites·20 claims
- 1298US10141221B1Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the sameMACRONIX INT CO LTD·Filed 2017·Granted Nov 27, 2018·37 cites·20 claims
- 1398US10043819B1Method for manufacturing 3D NAND memory using gate replacement, and resulting structuresMACRONIX INT CO LTD·Filed 2017·Granted Aug 7, 2018·40 cites·14 claims
- 1498US9449720B1Dynamic redundancy repairMACRONIX INT CO LTD·Filed 2015·Granted Sep 20, 2016·74 cites·20 claims
- 1598US8437192B23D two bit-per-cell NAND flash memoryLUNG HSIANG-LAN·Filed 2010·Granted May 7, 2013·61 cites·13 claims
- 1698US8089137B2Integrated circuit memory with single crystal silicon on silicide driver and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted Jan 3, 2012·124 cites·19 claims
- 1798US7772581B2Memory device having wide area phase change element and small electrode contact areaMACRONIX INT CO LTD·Filed 2006·Granted Aug 10, 2010·100 cites·12 claims
- 1898US7688619B2Phase change memory cell and manufacturing methodMACRONIX INT CO LTD·Filed 2006·Granted Mar 30, 2010·289 cites·17 claims
- 1998US7515461B2Current compliant sensing architecture for multilevel phase change memoryMACRONIX INT CO LTD·Filed 2007·Granted Apr 7, 2009·93 cites·20 claims
- 2098US7514334B2Thin film plate phase change RAM circuit and manufacturing methodMACRONIX INT CO LTD·Filed 2007·Granted Apr 7, 2009·74 cites·5 claims
- 2198US7479649B2Vacuum jacketed electrode for phase change memory elementMACRONIX INT CO LTD·Filed 2006·Granted Jan 20, 2009·95 cites·5 claims
- 2298US7473576B2Method for making a self-converged void and bottom electrode for memory cellMACRONIX INT CO LTD·Filed 2006·Granted Jan 6, 2009·98 cites·18 claims
- 2398US7449710B2Vacuum jacket for phase change memory elementMACRONIX INT CO LTD·Filed 2006·Granted Nov 11, 2008·101 cites·11 claims
- 2498US7397060B2Pipe shaped phase change memoryMACRONIX INT CO LTD·Filed 2006·Granted Jul 8, 2008·137 cites·20 claims
- 2598US7067865B2High density chalcogenide memory cellsMACRONIX INT CO LTD·Filed 2003·Granted Jun 27, 2006·238 cites·9 claims
- 2698US7033856B2Spacer chalcogenide memory methodMACRONIX INT CO LTD·Filed 2004·Granted Apr 25, 2006·238 cites·14 claims
- 2798US6838692B1Chalcogenide memory device with multiple bits per cellMACRONIX INT CO LTD·Filed 2003·Granted Jan 4, 2005·163 cites·16 claims
- 2897US11211395B23D memory array having select linesMACRONIX INT CO LTD·Filed 2019·Granted Dec 28, 2021·16 cites·7 claims
- 2997US10910393B23D NOR memory having vertical source and drain structuresMACRONIX INT CO LTD·Filed 2019·Granted Feb 2, 2021·24 cites·20 claims
- 3097US9793323B1Phase change memory with high enduranceMACRONIX INT CO LTD·Filed 2016·Granted Oct 17, 2017·21 cites·19 claims
- 3197US8829646B2Integrated circuit 3D memory array and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted Sep 9, 2014·49 cites·26 claims
- 3297US8173987B2Integrated circuit 3D phase change memory array and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted May 8, 2012·68 cites·12 claims
- 3397US7933139B2One-transistor, one-resistor, one-capacitor phase change memoryMACRONIX INT CO LTD·Filed 2009·Granted Apr 26, 2011·74 cites·23 claims
- 3497US7755076B24F2 self align side wall active phase change memoryMACRONIX INT CO LTD·Filed 2007·Granted Jul 13, 2010·64 cites·33 claims
- 3597US7696506B2Memory cell with memory material insulation and manufacturing methodMACRONIX INT CO LTD·Filed 2006·Granted Apr 13, 2010·46 cites·28 claims
- 3697US7642125B2Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturingMACRONIX INT CO LTD·Filed 2007·Granted Jan 5, 2010·36 cites·11 claims
- 3797US7507986B2Thermal isolation for an active-sidewall phase change memory cellMACRONIX INT CO LTD·Filed 2006·Granted Mar 24, 2009·67 cites·6 claims
- 3897US7504653B2Memory cell device with circumferentially-extending memory elementMACRONIX INT CO LTD·Filed 2006·Granted Mar 17, 2009·57 cites·14 claims
- 3997US7423300B2Single-mask phase change memory elementMACRONIX INT CO LTD·Filed 2006·Granted Sep 9, 2008·112 cites·17 claims
- 4097US7364935B2Common word line edge contact phase-change memoryMACRONIX INT CO LTD·Filed 2004·Granted Apr 29, 2008·127 cites·14 claims
- 4197US6750101B2Method of manufacturing self-aligned, programmable phase change memoryMACRONIX INT CO LTD·Filed 2002·Granted Jun 15, 2004·150 cites·14 claims
- 4296US9917252B2GaSbGe phase change memory materialsMACRONIX INT CO LTD·Filed 2015·Granted Mar 13, 2018·6 cites·20 claims
- 4396US9646692B1Programming verify for nonvolatile memoryMACRONIX INT CO LTD·Filed 2015·Granted May 9, 2017·24 cites·17 claims
- 4496US7476587B2Method for making a self-converged memory material element for memory cellMACRONIX INT CO LTD·Filed 2006·Granted Jan 13, 2009·42 cites·16 claims
- 4596US6830952B2Spacer chalcogenide memory method and deviceMACRONIX INT CO LTD·Filed 2003·Granted Dec 14, 2004·155 cites·13 claims
- 4696US6282118B1Nonvolatile semiconductor memory deviceMACRONIX INT CO LTD·Filed 2000·Granted Aug 28, 2001·174 cites·15 claims
- 4795US11069704B23D NOR memory having vertical gate structuresMACRONIX INT CO LTD·Filed 2019·Granted Jul 20, 2021·11 cites·17 claims
- 4895US10374009B1Te-free AsSeGe chalcogenides for selector devices and memory devices using sameMACRONIX INT CO LTD·Filed 2018·Granted Aug 6, 2019·22 cites·12 claims
- 4995US9472274B1Refresh of nonvolatile memory cells and reference cells with resistance driftMACRONIX INT CO LTD·Filed 2015·Granted Oct 18, 2016·19 cites·14 claims
- 5095US8946666B2Ge-Rich GST-212 phase change memory materialsCHENG HUAI-YU·Filed 2011·Granted Feb 3, 2015·16 cites·12 claims
Showing the top 50 of 353 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →