Inventor · disambiguated record
Hsiang-Ying Wang
Also filed as: WANG HSIANG-YING
12 granted patents·3 pending applications·120 citations·filing 2003–2011
90Inventor score
Top patents by PatentIndex Score
15 records- 0194US7473606B2Method for fabricating metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 6, 2009·27 cites·17 claims
- 0288US7396717B2Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jul 8, 2008·15 cites·18 claims
- 0385US6815770B1MOS transistor having reduced source/drain extension sheet resistanceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Nov 9, 2004·37 cites·13 claims
- 0483US7795101B2Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2010·Granted Sep 14, 2010·7 cites·10 claims
- 0574US6943085B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2003·Granted Sep 13, 2005·14 cites·19 claims
- 0665US8431460B2Method for fabricating semiconductor deviceHUANG SHIN-CHUAN·Filed 2011·Granted Apr 30, 2013·3 cites·8 claims
- 0763US7435658B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 14, 2008·1 cites·6 claims
- 0863US7176504B1SiGe MOSFET with an erosion preventing Six1Gey1 layerUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 13, 2007·3 cites·9 claims
- 0961US8076210B2Method for fabricating metal-oxide semiconductor transistorsHSIAO TSAI-FU·Filed 2011·Granted Dec 13, 2011·1 cites·5 claims
- 1061US7071046B2Method of manufacturing a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jul 4, 2006·10 cites·32 claims
- 1157US8053847B2Method for fabricating metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2008·Granted Nov 8, 2011·0 cites·18 claims
- 1250US7060547B2Method for forming a junction region of a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jun 13, 2006·2 cites·25 claims
- 1349US2007228464A1MOS transistorWANG HSIANG-YING·Filed 2007·Application pending·0 cites
- 1444US2008258178A1Method of forming a MOS transistorWANG HSIANG-YING·Filed 2008·Application pending·0 cites
- 1538US2006189167A1Method for fabricating silicon nitride filmWANG HSIANG-YING·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →