Inventor · disambiguated record

Huicheng Chang

Also filed as: CHANG HUICHENG

209 granted patents·94 pending applications·708 citations·filing 2007–2025

99Inventor score

Technology areasH10P H10D H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD282 TAIWAN SEMICONDUCTOR MFG12 CHING KUO-CHENG1 INTEL CORP1 JENSEN JACOB M1

Top patents by PatentIndex Score

303 records

0199US8497177B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 30, 2013·252 cites·20 claims
0298US9607838B1Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·25 cites·20 claims
0397US11978677B2Wafer positioning method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·3 cites·20 claims
0497US11848361B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
0597US11594618B2FinFET devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·3 cites·20 claims
0697US11508831B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·4 cites·20 claims
0797US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
0897US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
0997US10347762B1Field effect transistor contact with reduced contact resistance using implantation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 9, 2019·20 cites·20 claims
1097US8680576B2CMOS device and method of forming the sameCHING KUO-CHENG·Filed 2012·Granted Mar 25, 2014·198 cites·19 claims
1196US11908708B2Laser de-bonding carriers and composite carriers thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·3 cites·20 claims
1296US11901235B2Ion implantation for nano-FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
1396US11257952B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
1496US10950447B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
1596US10658510B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
1695US11670683B2Semiconductor device with implant and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
1795US11257911B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
1894US11855040B2Ion implantation with annealing for substrate cuttingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
1994US11776814B2Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
2094US10868142B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·7 cites·20 claims
2193US11776960B2Gate structures for stacked semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
2293US11348835B2Ion implantation for nano-FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
2393US10763168B2Semiconductor structure with doped via plug and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·10 cites·20 claims
2493US10515966B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·5 cites·20 claims
2593US10056383B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·6 cites·20 claims
2692US11605555B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
2792US10115808B2finFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·6 cites·20 claims
2891US11901455B2Method of manufacturing a FinFET by implanting a dielectric with a dopantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
2991US11450757B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
3091US9812451B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·5 cites·20 claims
3190US11855146B2Melt anneal source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
3290US11699621B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
3390US11145751B2Semiconductor structure with doped contact plug and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 12, 2021·6 cites·20 claims
3490US10504735B2Method of forming a semiconductor device by high-pressure anneal and post-anneal treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
3590US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
3690US2025343069A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3790US2025344489A1Dual Dopant Source/Drain Regions and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3889US11901189B2Ambient controlled two-step thermal treatment for spin-on coating layer planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·2 cites·20 claims
3989US11776810B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
4089US10770570B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·4 cites·20 claims
4189US10714348B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·3 cites·20 claims
4289US10157995B2Integrating junction formation of transistors with contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 18, 2018·9 cites·20 claims
4389US8822290B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·12 cites·20 claims
4488US10504795B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·3 cites·20 claims
4588US8927362B2CMOS device and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 6, 2015·9 cites·20 claims
4687US12293924B2Ion exposure method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 6, 2025·0 cites·20 claims
4787US9048087B2Methods for wet clean of oxide layers over epitaxial layersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·8 cites·20 claims
4887US2025344425A1Source/Drain Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4986US10643892B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·3 cites·20 claims
5086US2025318262A1Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 303 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →