Inventor · disambiguated record
Hung-Li Chiang
Also filed as: CHIANG HUNG-LI
155 granted patents·47 pending applications·629 citations·filing 2012–2025
99Inventor score
Top patents by PatentIndex Score
202 records- 0199US9853101B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·151 cites·20 claims
- 0298US11289384B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 0398US11145676B1Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·8 cites·18 claims
- 0498US10290546B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·131 cites·20 claims
- 0598US10134640B1Semiconductor device structure with semiconductor wireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·42 cites·20 claims
- 0698US9570580B1Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·23 cites·20 claims
- 0797US11342015B1Memory device and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
- 0897US11043570B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·4 cites·20 claims
- 0997US9472669B1Semiconductor Fin FET device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·24 cites·20 claims
- 1096US12046665B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·2 cites·20 claims
- 1196US11923413B2Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 1296US11910732B2Resistive memory devices using a carbon-based conductor line and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 1396US11245005B2Method for manufacturing semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
- 1496US11038044B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·9 cites·20 claims
- 1596US10872825B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·10 cites·20 claims
- 1696US10403550B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 3, 2019·12 cites·20 claims
- 1796US10121870B1Semiconductor device structure with strain-relaxed bufferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 6, 2018·15 cites·20 claims
- 1895US10153280B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·7 cites·19 claims
- 1995US2025374642A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2094US11600720B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·20 claims
- 2194US11038043B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·6 cites·20 claims
- 2294US10756089B2Hybrid semiconductor transistor structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·7 cites·20 claims
- 2394US10727298B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·5 cites·20 claims
- 2493US11929115B2Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 2593US11837611B2Data storage element and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·2 cites·20 claims
- 2693US10418363B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·5 cites·20 claims
- 2793US10164042B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 2893US9627531B1Field-effect transistor with dual vertical gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·8 cites·20 claims
- 2993US9263342B2Semiconductor device having a strained regionLEE TSUNG-LIN·Filed 2012·Granted Feb 16, 2016·13 cites·16 claims
- 3093US9087725B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 21, 2015·11 cites·20 claims
- 3192US11342380B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 3292US11004965B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·20 claims
- 3391US11183560B2Multi-gate semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·4 cites·20 claims
- 3491US11145347B1Memory device and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·3 cites·20 claims
- 3591US10886182B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 5, 2021·5 cites·20 claims
- 3691US10868114B2Isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·20 claims
- 3791US10593775B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 17, 2020·4 cites·20 claims
- 3891US10522622B2Multi-gate semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·4 cites·20 claims
- 3991US9741829B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·5 cites·19 claims
- 4090US12040400B2Method for forming semiconductor device structure with nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 4190US11244866B2Low dimensional material device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·2 cites·20 claims
- 4290US10854605B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
- 4390US10062782B2Method of manufacturing a semiconductor device with multilayered channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·5 cites·20 claims
- 4490US9257344B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 9, 2016·5 cites·20 claims
- 4589US10290548B2Semiconductor device structure with semiconductor wireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·4 cites·20 claims
- 4688US12363963B2Isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 4788US11367482B2Read method, write method and memory circuit using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·2 cites·20 claims
- 4888US9721829B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·4 cites·20 claims
- 4988US2025324688A1Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5088US2025318449A1Resistive memory devices using a carbon-based conductor line and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 202 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →