Inventor · disambiguated record
Huan-Chi Ma
Also filed as: MA HUAN CHI
10 granted patents·4 pending applications·3 citations·filing 2017–2025
80Inventor score
Files withUNITED MICROELECTRONICS CORP14
Top patents by PatentIndex Score
14 records- 0188US11871585B2Semiconductor device comprising magnetic tunneling junctions (MTJs) in a magnetoresistive random access memory (MRAM)UNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 9, 2024·1 cites·6 claims
- 0284US12156408B2Semiconductor device comprising magnetic tunneling junctions with different distances/widths in a magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2023·Granted Nov 26, 2024·0 cites·5 claims
- 0380US2025048649A1Semiconductor Device Comprising Magnetic Tunneling Junctions in a Magnetoresistive Random Access MemoryUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0476US2025351399A1Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0573US11664425B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted May 30, 2023·0 cites·6 claims
- 0672US12490446B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Dec 2, 2025·0 cites·10 claims
- 0772US10388788B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 20, 2019·2 cites·14 claims
- 0868US11916126B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 27, 2024·0 cites·17 claims
- 0966US11271078B2P-type field effect transistor having channel region with top portion and bottom portionUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 8, 2022·0 cites·1 claims
- 1065US11538917B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 27, 2022·0 cites·17 claims
- 1161US12283637B2MOS capacitor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 22, 2025·0 cites·7 claims
- 1257US10651275B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 12, 2020·0 cites·6 claims
- 1356US2024413233A1Gallium nitride semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1454US2022181505A1Mos capacitor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →