Inventor · disambiguated record
Huiling Shang
Also filed as: SHANG HUILING
41 granted patents·17 pending applications·265 citations·filing 2001–2025
97Inventor score
Top patents by PatentIndex Score
58 records- 0198US11769819B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·4 cites·20 claims
- 0298US11444179B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·5 cites·20 claims
- 0396US11948998B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0495US8928086B2Strained finFET with an electrically isolated channelIBM·Filed 2013·Granted Jan 6, 2015·19 cites·15 claims
- 0595US7244958B2Integration of strained Ge into advanced CMOS technologyIBM·Filed 2004·Granted Jul 17, 2007·82 cites·9 claims
- 0694US9190520B2Strained finFET with an electrically isolated channelIBM·Filed 2014·Granted Nov 17, 2015·15 cites·18 claims
- 0794US8592264B2Source-drain extension formation in replacement metal gate transistor deviceANDO TAKASHI·Filed 2011·Granted Nov 26, 2013·17 cites·11 claims
- 0892US11121236B2Semiconductor device with air spacer and stress linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·7 cites·20 claims
- 0991US8080838B2Contact scheme for FINFET structures with multiple FINsCHANG LELAND·Filed 2009·Granted Dec 20, 2011·18 cites·18 claims
- 1088US7387925B2Integration of strained Ge into advanced CMOS technologyIBM·Filed 2007·Granted Jun 17, 2008·12 cites·1 claims
- 1185US12132096B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 1285US9536900B2Forming fins of different semiconductor materials on the same substrateGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·7 cites·13 claims
- 1385US7521376B2Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatmentIBM·Filed 2005·Granted Apr 21, 2009·10 cites·9 claims
- 1485US2024387691A1Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1582US12349384B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1682US10868174B1Devices with strained isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 1781US12148669B2Semiconductor device with S/D bottom isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1880US2025351419A1Semiconductor device with hybrid substrate and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1980US2025366155A1Protection layer for reducing sti loss and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2079US9029913B2Silicon-germanium fins and silicon fins on a bulk substrateIBM·Filed 2013·Granted May 12, 2015·5 cites·22 claims
- 2179US8232599B2Bulk substrate FET integrated on CMOS SOICHOU ANTHONY I·Filed 2010·Granted Jul 31, 2012·5 cites·15 claims
- 2279US2024379442A1Semiconductor device with s/d bottom isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2377US2024096971A1Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2476US11855155B2Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2576US7449782B2Self-aligned metal to form contacts to Ge containing substrates and structure formed therebyIBM·Filed 2004·Granted Nov 11, 2008·16 cites·10 claims
- 2676US2025318194A1Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2775US10840375B2Integrated circuits with channel-strain linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·1 cites·20 claims
- 2875US7790538B2Integration of strained Ge into advanced CMOS technologyIBM·Filed 2008·Granted Sep 7, 2010·4 cites·8 claims
- 2975US2023387300A1Devices with strained isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3073US2025366154A1Protection layer for reducing sti loss and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3171US8933528B2Semiconductor fin isolation by a well trapping fin portionIBM·Filed 2013·Granted Jan 13, 2015·2 cites·20 claims
- 3271US2025072037A1Semiconductor device with hybrid substrate and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3370US11837662B2Devices with strained isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·0 cites·20 claims
- 3469US11302784B2Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 3568US11854896B2Semiconductor device with S/D bottom isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3667US8927361B2High threshold voltage NMOS transistors for low power IC technologyIBM·Filed 2013·Granted Jan 6, 2015·2 cites·9 claims
- 3766US12414330B2Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 3866US10879373B2Structure and formation method of semiconductor device with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 3966US8685818B2Method of forming a shallow trench isolation embedded polysilicon resistorSHANG HUILING·Filed 2010·Granted Apr 1, 2014·3 cites·22 claims
- 4066US6803266B2Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed therebyIBM·Filed 2003·Granted Oct 12, 2004·9 cites·20 claims
- 4166US6603181B2MOS device having a passivated semiconductor-dielectric interfaceIBM·Filed 2001·Granted Aug 5, 2003·9 cites·7 claims
- 4265US11430890B2Integrated circuits with channel-strain linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 4363US7078300B2Thin germanium oxynitride gate dielectric for germanium-based devicesIBM·Filed 2003·Granted Jul 18, 2006·7 cites·16 claims
- 4461US8558313B2Bulk substrate FET integrated on CMOS SOICHOU ANTHONY I·Filed 2012·Granted Oct 15, 2013·1 cites·5 claims
- 4559US7682968B2Self-aligned metal to form contacts to Ge containing substrates and structure formed therebyIBM·Filed 2008·Granted Mar 23, 2010·1 cites·20 claims
- 4659US2025185270A1Formation of gate-all-around devices and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4759US2025338558A1Integrated circuit with ion implantation in ildTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4856US10242980B2Semiconductor fin isolation by a well trapping fin portionIBM·Filed 2016·Granted Mar 26, 2019·0 cites·14 claims
- 4956US9496258B2Semiconductor fin isolation by a well trapping fin portionIBM·Filed 2014·Granted Nov 15, 2016·0 cites·13 claims
- 5056US2024339362A1Multi-gate devices with improved performance and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →