Inventor · disambiguated record

Hung-Ling Shih

Also filed as: SHIH HUNG-LING

54 granted patents·16 pending applications·77 citations·filing 2007–2025

97Inventor score

Technology areasH10W H10D H10P H01L G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD61 UNITED MICROELECTRONICS CORP4 LIAO PO-JUI2 HSU CHE-HUA1 HWANG GUANG-YAW1

Top patents by PatentIndex Score

70 records

0198US11031303B1Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·6 cites·12 claims
0297US11450574B2Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·3 cites·20 claims
0396US11158377B2Device-region layout for embedded flashTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·3 cites·20 claims
0495US11869951B2Control gate strap layout to improve a word line etch process windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·2 cites·20 claims
0594US11830765B2Method of forming a deep trench isolation structure for isolation of high-voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·2 cites·20 claims
0694US11670689B2Method for eliminating divot formation and semiconductor device manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
0792US11652025B2Through-substrate via formation to enlarge electrochemical plating windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
0891US10943913B2Strap-cell architecture for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
0990US11069695B2Floating gate test structure for embedded memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·4 cites·20 claims
1088US11101168B2Profile of deep trench isolation structure for isolation of high-voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·2 cites·20 claims
1186US12277977B2ONON sidewall structure for memory device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
1285US8704294B2Semiconductor device having metal gate and manufacturing method thereofLIAO PO-JUI·Filed 2011·Granted Apr 22, 2014·7 cites·8 claims
1385US2025343113A1Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1484US11862535B2Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
1584US9384962B2Oxygen treatment of replacement work-function metals in CMOS transistor gatesHWANG GUANG-YAW·Filed 2011·Granted Jul 5, 2016·7 cites·22 claims
1683US11127827B2Control gate strap layout to improve a word line etch process windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·2 cites·20 claims
1783US10541245B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
1883US8952451B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Feb 10, 2015·5 cites·8 claims
1982US12009033B2ONON sidewall structure for memory device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
2082US10269818B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·2 cites·20 claims
2182US10269815B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
2282US2025318290A1Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2381US9287280B2Method to improve memory cell erasureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·4 cites·20 claims
2481US2025038076A1Through-substrate via formation to enlarge electrochemical plating windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2580US12101931B2Strap-cell architecture for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
2680US10510544B2Non-volatile memory semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·2 cites·17 claims
2780US2025210111A1ONON Sidewall Structure for Memory Device and Method for Making the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2880US2025204021A1Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2979US12211906B2Method for eliminating divot formation and semiconductor device manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
3079US12068032B2Device-region layout for embedded flashTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
3179US2024373628A1Strap-cell architecture for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3279US2024379716A1Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3379US2023262974A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3478US12266577B2Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
3578US2024355393A1Device-region layout for embedded flashTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3678US2024379771A1Method for eliminating divot formation and semiconductor device manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3777US11785770B2Strap-cell architecture for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
3877US8802524B2Method of manufacturing semiconductor device having metal gatesLIAO PO-JUI·Filed 2011·Granted Aug 12, 2014·5 cites·20 claims
3977US2024088246A1Control gate strap layout to improve a word line etch process windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4076US12176266B2Through-substrate via formation to enlarge electrochemical plating windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
4176US2024087988A1Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4274US11812608B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
4374US9252150B1High endurance non-volatile memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 2, 2016·3 cites·20 claims
4473US11854621B2ONON sidewall structure for memory device and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
4573US11637113B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
4670US12396272B2Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 19, 2025·0 cites·20 claims
4770US10978463B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
4869US11737267B2Floating gate test structure for embedded memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
4969US11699488B2Device-region layout for embedded flashTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·20 claims
5068US12096629B2Floating gate test structure for embedded memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims

Showing the top 50 of 70 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →