Inventor · disambiguated record
Hye-Lan Lee
Also filed as: LEE HYE-LAN
20 granted patents·16 pending applications·80 citations·filing 2005–2020
93Inventor score
Top patents by PatentIndex Score
36 records- 0194US9287181B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2015·Granted Mar 15, 2016·16 cites·26 claims
- 0290US8513740B2Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the samePARK HONG-BAE·Filed 2010·Granted Aug 20, 2013·18 cites·19 claims
- 0382US7390719B2Method of manufacturing a semiconductor device having a dual gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·10 cites·20 claims
- 0481US9553094B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2016·Granted Jan 24, 2017·3 cites·12 claims
- 0581US8309411B2Semiconductor device and method of fabricating the sameNA HOONJOO·Filed 2011·Granted Nov 13, 2012·7 cites·16 claims
- 0679US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 0776US8786028B2Semiconductor device and method of fabricating the sameHONG HYUNG-SEOK·Filed 2012·Granted Jul 22, 2014·5 cites·35 claims
- 0875US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 0975US9252058B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·3 cites·20 claims
- 1070US8580629B2Method of fabricating semiconductor device using a work function control filmPARK HONG-BAE·Filed 2011·Granted Nov 12, 2013·3 cites·15 claims
- 1168US7494859B2Semiconductor device having metal gate patterns and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·22 claims
- 1267USRE49538ESemiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 30, 2023·0 cites·25 claims
- 1363US7531881B2Semiconductor devices having transistors with different gate structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·2 cites·14 claims
- 1457US8183141B2Methods of forming semiconductor devicesHYUN SANGJIN·Filed 2009·Granted May 22, 2012·1 cites·16 claims
- 1553US11127739B2Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·10 claims
- 1652US7892958B2Methods of fabricating semiconductor devices having transistors with different gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·0 cites·4 claims
- 1751US8766366B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 1, 2014·0 cites·5 claims
- 1850US2022411818A1Improved in vivo reprogramming system and cell conversion method using sameUNIV YONSEI IACF·Filed 2020·Application pending·0 cites
- 1947US7727841B2Method of manufacturing semiconductor device with dual gatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 1, 2010·0 cites·15 claims
- 2045US2014374840A1Semiconductor devices using mos transistors with nonuniform gate electrode structures and methods of fabricating the sameLEE HYE-LAN·Filed 2014·Application pending·0 cites
- 2144US7399670B2Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·0 cites·19 claims
- 2243US2007026596A1Gate electrode structure and method of forming the same, and semiconductor transistor having the gate electrode structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2343US2010193875A1Semiconductor device with dual gates and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2443US2015035077A1Mos transistors including a recessed metal pattern in a trenchLEE HYE-LAN·Filed 2014·Application pending·0 cites
- 2542US2012214296A1Methods of Forming Semiconductor DevicesHYUN SANGJIN·Filed 2012·Application pending·0 cites
- 2642US2014203335A1Semiconductor Devices and Methods for Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2741US9337295B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·0 cites·11 claims
- 2841US2008023765A1Semiconductor Devices and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2940US2007128775A1Method of manufacturing a semiconductor device having a tungsten carbon nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3038US2012052641A1Methods of Manufacturing MOS TransistorsLEE HYE-LAN·Filed 2011·Application pending·0 cites
- 3138US2008308876A1Semiconductor device and method of manufacturing the sameLEE HYE-LAN·Filed 2008·Application pending·0 cites
- 3237US2019096770A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 3335US2007026621A1Non-volatile semiconductor devices and methods of manufacturing the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
- 3434US2012280330A1Semiconductor devices and methods for fabricating the sameLEE HYE-LAN·Filed 2012·Application pending·0 cites
- 3534US2007059929A1Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
- 3634US2016351569A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →