Methods of Forming Semiconductor Devices

Abstract

Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.

1 . A method of forming a semiconductor device, comprising:
 forming a metal oxide layer on a substrate;   forming a sacrificial oxide layer on the metal oxide layer; and   performing an annealing process on the substrate including the sacrificial oxide layer, wherein a formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process;   wherein forming the metal oxide layer comprises:   forming a first metal oxide layer on the substrate; and   forming a second metal oxide layer on the first metal oxide layer;   wherein the formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the first metal oxide layer and a formation-free energy of the second metal oxide layer at the process temperature of the annealing process; and   wherein the first and second metal oxide layers are combined with each other by the annealing process to form a combination layer.