Inventor · disambiguated record
Hyung-Seok Hong
Also filed as: HONG HYUNG-SEOK
23 granted patents·6 pending applications·87 citations·filing 2009–2024
94Inventor score
Top patents by PatentIndex Score
29 records- 0190US8513740B2Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the samePARK HONG-BAE·Filed 2010·Granted Aug 20, 2013·18 cites·19 claims
- 0289US8748251B2Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesNA HOON-JOO·Filed 2012·Granted Jun 10, 2014·10 cites·14 claims
- 0386US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 0486US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 0581US8309411B2Semiconductor device and method of fabricating the sameNA HOONJOO·Filed 2011·Granted Nov 13, 2012·7 cites·16 claims
- 0679US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 0776US8786028B2Semiconductor device and method of fabricating the sameHONG HYUNG-SEOK·Filed 2012·Granted Jul 22, 2014·5 cites·35 claims
- 0875US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 0975US9252058B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·3 cites·20 claims
- 1070US8580629B2Method of fabricating semiconductor device using a work function control filmPARK HONG-BAE·Filed 2011·Granted Nov 12, 2013·3 cites·15 claims
- 1169US9236313B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·16 claims
- 1268US8772115B2Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 8, 2014·3 cites·16 claims
- 1367USRE49538ESemiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 30, 2023·0 cites·25 claims
- 1467US8048787B2Methods of forming semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 1, 2011·2 cites·7 claims
- 1566US8557651B2Method of manufacturing a semiconductor device using an etchantLEE HYO-SAN·Filed 2011·Granted Oct 15, 2013·2 cites·19 claims
- 1665US2025331172A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1764US8044469B2Semiconductor device and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·2 cites·9 claims
- 1857US8633546B2Semiconductor devicePARK HONGBAE·Filed 2012·Granted Jan 21, 2014·1 cites·20 claims
- 1957US8183141B2Methods of forming semiconductor devicesHYUN SANGJIN·Filed 2009·Granted May 22, 2012·1 cites·16 claims
- 2055US8367502B2Method of manufacturing dual gate semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 5, 2013·1 cites·14 claims
- 2151US8932922B2Method of fabricating semiconductor device having dual gateNA HOON-JOO·Filed 2011·Granted Jan 13, 2015·0 cites·12 claims
- 2251US8766366B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 1, 2014·0 cites·5 claims
- 2350US2014246726A1Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2446US8569821B2Semiconductor devices and methods of forming the sameHYUN SANGJIN·Filed 2011·Granted Oct 29, 2013·0 cites·8 claims
- 2545US8278168B2Methods of forming a semiconductor devicePARK HONGBAE·Filed 2011·Granted Oct 2, 2012·0 cites·9 claims
- 2643US2015035077A1Mos transistors including a recessed metal pattern in a trenchLEE HYE-LAN·Filed 2014·Application pending·0 cites
- 2742US2012214296A1Methods of Forming Semiconductor DevicesHYUN SANGJIN·Filed 2012·Application pending·0 cites
- 2838US2012052641A1Methods of Manufacturing MOS TransistorsLEE HYE-LAN·Filed 2011·Application pending·0 cites
- 2937US2019096770A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →