Inventor · disambiguated record
Ian Latchford
Also filed as: LATCHFORD IAN · LATCHFORD IAN S · LATCHFORD IAN SCOT
16 granted patents·2 pending applications·2,130 citations·filing 1989–2018
96Inventor score
Top patents by PatentIndex Score
18 records- 0198US6573030B1Method for depositing an amorphous carbon layerAPPLIED MATERIALS INC·Filed 2000·Granted Jun 3, 2003·1.3k cites·129 claims
- 0296US6780753B2Airgap for semiconductor devicesAPPLIED MATERIALS INC·Filed 2002·Granted Aug 24, 2004·126 cites·18 claims
- 0395US7335462B2Method of depositing an amorphous carbon layerAPPLIED MATERIALS INC·Filed 2007·Granted Feb 26, 2008·24 cites·20 claims
- 0495US6841341B2Method of depositing an amorphous carbon layerAPPLIED MATERIALS INC·Filed 2002·Granted Jan 11, 2005·78 cites·19 claims
- 0593US7332262B2Photolithography scheme using a silicon containing resistAPPLIED MATERIALS INC·Filed 2005·Granted Feb 19, 2008·23 cites·20 claims
- 0693US7223526B2Method of depositing an amorphous carbon layerAPPLIED MATERIALS INC·Filed 2004·Granted May 29, 2007·50 cites·20 claims
- 0791US5545289APassivating, stripping and corrosion inhibition of semiconductor substratesAPPLIED MATERIALS INC·Filed 1994·Granted Aug 13, 1996·184 cites·91 claims
- 0888US6967072B2Photolithography scheme using a silicon containing resistAPPLIED MATERIALS INC·Filed 2001·Granted Nov 22, 2005·41 cites·49 claims
- 0981US5200031AMethod for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch stepsAPPLIED MATERIALS INC·Filed 1991·Granted Apr 6, 1993·91 cites·11 claims
- 1077US6913868B2Conductive bi-layer e-beam resist with amorphous carbonAPPLIED MATERIALS INC·Filed 2003·Granted Jul 5, 2005·14 cites·21 claims
- 1174US5160407ALow pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor waferAPPLIED MATERIALS INC·Filed 1991·Granted Nov 3, 1992·69 cites·9 claims
- 1268US6868856B2Enhanced remote plasma cleaningAPPLIED MATERIALS INC·Filed 2001·Granted Mar 22, 2005·9 cites·18 claims
- 1367US5147499AProcess for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structureAPPLIED MATERIALS INC·Filed 1991·Granted Sep 15, 1992·45 cites·19 claims
- 1463US5030590AProcess for etching polysilicon layer in formation of integrated circuit structureAPPLIED MATERIALS INC·Filed 1989·Granted Jul 9, 1991·31 cites·18 claims
- 1557US10400323B2Ultra-low defect part processLAM RES CORP·Filed 2017·Granted Sep 3, 2019·0 cites·15 claims
- 1655US5296093AProcess for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structureAPPLIED MATERIALS INC·Filed 1992·Granted Mar 22, 1994·28 cites·19 claims
- 1739US2006102078A1Wafer fabINTEVAC INC·Filed 2004·Application pending·0 cites
- 1838US2018294197A1System design for in-line particle and contamination metrology for showerhead and electrode partsLAM RES CORP·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →