Inventor · disambiguated record
Igor Sankin
Also filed as: SANKIN IGOR
23 granted patents·6 pending applications·332 citations·filing 2002–2021
96Inventor score
Top patents by PatentIndex Score
29 records- 0197US8017981B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2010·Granted Sep 13, 2011·31 cites·24 claims
- 0293US7274083B1Semiconductor device with surge current protection and method of making the sameSEMISOUTH LAB INC·Filed 2006·Granted Sep 25, 2007·28 cites·14 claims
- 0390US7977713B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Jul 12, 2011·16 cites·24 claims
- 0490US7556994B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Jul 7, 2009·18 cites·28 claims
- 0590US6767783B2Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantationMISSISSIPPI STATE UNIVERSITY R·Filed 2002·Granted Jul 27, 2004·89 cites·27 claims
- 0688US7560325B1Methods of making lateral junction field effect transistors using selective epitaxial growthSEMISOUTH LAB INC·Filed 2008·Granted Jul 14, 2009·17 cites·29 claims
- 0785US7820511B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Oct 26, 2010·10 cites·12 claims
- 0884US7314799B2Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingSEMISOUTH LAB INC·Filed 2005·Granted Jan 1, 2008·9 cites·33 claims
- 0984US7202528B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2004·Granted Apr 10, 2007·31 cites·90 claims
- 1082US7242040B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2006·Granted Jul 10, 2007·9 cites·15 claims
- 1179US6693308B2Power SiC devices having raised guard ringsSEMISOUTH LAB LLC·Filed 2002·Granted Feb 17, 2004·35 cites·26 claims
- 1273US8502282B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSANKIN IGOR·Filed 2011·Granted Aug 6, 2013·3 cites·20 claims
- 1371US7119380B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2004·Granted Oct 10, 2006·14 cites·12 claims
- 1465US10026861B2Photovoltaic device and method of formationFIRST SOLAR INC·Filed 2012·Granted Jul 17, 2018·1 cites·48 claims
- 1564US6815304B2Silicon carbide bipolar junction transistor with overgrown base regionSEMISOUTH LAB LLC·Filed 2002·Granted Nov 9, 2004·15 cites·20 claims
- 1661US7960198B2Method of making a semiconductor device with surge current protectionSEMISOUTH LAB·Filed 2007·Granted Jun 14, 2011·3 cites·16 claims
- 1760US7510921B2Self-aligned silicon carbide semiconductor devices and methods of making the sameSEMISOUTH LAB INC·Filed 2007·Granted Mar 31, 2009·2 cites·15 claims
- 1860US2014261685A1Thin film photovoltaic device wtih large grain structure and methods of formationFIRST SOLAR INC·Filed 2014·Application pending·0 cites
- 1955US7470967B2Self-aligned silicon carbide semiconductor devices and methods of making the sameSEMISOUTH LAB INC·Filed 2005·Granted Dec 30, 2008·1 cites·13 claims
- 2053US11870002B2Methods and systems for use with photovoltaic devicesFIRST SOLAR INC·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 2153US2014261667A1Photovoltaic device having improved back electrode and method of formationFIRST SOLAR INC·Filed 2014·Application pending·0 cites
- 2250US2011139240A1Photovoltaic window layerFIRST SOLAR INC·Filed 2010·Application pending·0 cites
- 2349US2008061362A1Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingSEMISOUTH LAB INC·Filed 2007·Application pending·0 cites
- 2446US8269262B2Vertical junction field effect transistor with mesa termination and method of making the sameSANKIN IGOR·Filed 2007·Granted Sep 18, 2012·0 cites·20 claims
- 2545US8729628B2Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingMERRETT JOSEPH NEIL·Filed 2012·Granted May 20, 2014·0 cites·31 claims
- 2645US2010212730A1Photovoltaic devices including back metal contactsFIRST SOLAR INC·Filed 2009·Application pending·0 cites
- 2744US2012309154A1Vertical junction field effect transistor with mesa termination and method of making the sameSANKIN IGOR·Filed 2012·Application pending·0 cites
- 2843US8507335B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSANKIN IGOR·Filed 2011·Granted Aug 13, 2013·0 cites·18 claims
- 2934US9209096B2Photoluminescence measurementALLENIC ARNOLD·Filed 2011·Granted Dec 8, 2015·0 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →