Inventor · disambiguated record
Jacek Korec
Also filed as: KOREC JACEK
59 granted patents·4 pending applications·2,621 citations·filing 1993–2023
99Inventor score
Files withSILICONIX INC9SILANNA ASIA PTE LTD7VISHAY SILICONIX7TEXAS INSTRUMENTS INC6CICLON SEMICONDUCTOR DEVICE CO5
Top patents by PatentIndex Score
63 records- 0199US6049108ATrench-gated MOSFET with bidirectional voltage clampingSILICONIX INC·Filed 1997·Granted Apr 11, 2000·511 cites·14 claims
- 0298US7282765B2Power LDMOS transistorCICLON SEMICONDUCTOR DEVICE CO·Filed 2005·Granted Oct 16, 2007·121 cites·25 claims
- 0397US7235845B2Power LDMOS transistorCICLON SEMICONDUCTOR DEVICE CO·Filed 2005·Granted Jun 26, 2007·72 cites·22 claims
- 0496US8994115B2Power device integration on a common substrateIO SEMICONDUCTOR INC·Filed 2014·Granted Mar 31, 2015·24 cites·10 claims
- 0596US8674440B2Power device integration on a common substrateIO SEMICONDUCTOR INC·Filed 2013·Granted Mar 18, 2014·39 cites·20 claims
- 0696US6838722B2Structures of and methods of fabricating trench-gated MIS devicesSILICONIX INC·Filed 2002·Granted Jan 4, 2005·98 cites·7 claims
- 0796US6392290B1Vertical structure for semiconductor wafer-level chip scale packagesSILICONIX INC·Filed 2000·Granted May 21, 2002·171 cites·23 claims
- 0896US6285060B1Barrier accumulation-mode MOSFETSILICONIX INC·Filed 1999·Granted Sep 4, 2001·173 cites·19 claims
- 0996US5488236ALatch-up resistant bipolar transistor with trench IGFET and buried collectorUNIV NORTH CAROLINA STATE·Filed 1994·Granted Jan 30, 1996·160 cites·19 claims
- 1095US9412881B2Power device integration on a common substrateSILANNA ASIA PTE LTD·Filed 2013·Granted Aug 9, 2016·17 cites·23 claims
- 1195US8847310B1Power device integration on a common substrateAzure Silicon LLC·Filed 2014·Granted Sep 30, 2014·26 cites·21 claims
- 1295US7745846B2LDMOS integrated Schottky diodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2008·Granted Jun 29, 2010·39 cites·23 claims
- 1395US7589378B2Power LDMOS transistorTEXAS INSTR LEHIGH VALLEY INC·Filed 2007·Granted Sep 15, 2009·53 cites·28 claims
- 1495US7446375B2Quasi-vertical LDMOS device having closed cell layoutCICLON SEMICONDUCTOR DEVICE CO·Filed 2006·Granted Nov 4, 2008·48 cites·22 claims
- 1595US7005347B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 28, 2006·74 cites·17 claims
- 1695US6078090ATrench-gated Schottky diode with integral clamping diodeSILICONIX INC·Filed 1997·Granted Jun 20, 2000·265 cites·66 claims
- 1794US7420247B2Power LDMOS transistorCICION SEMICONDUCTOR DEVICE CO·Filed 2005·Granted Sep 2, 2008·52 cites·10 claims
- 1893US8994105B2Power device integration on a common substrateAzure Silicon LLC·Filed 2013·Granted Mar 31, 2015·19 cites·28 claims
- 1992US8324711B2Precision high-frequency capacitor formed on semiconductor substrateGOLDBERGER HAIM·Filed 2011·Granted Dec 4, 2012·12 cites·18 claims
- 2092US7868381B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2007·Granted Jan 11, 2011·22 cites·9 claims
- 2192US7560808B2Chip scale power LDMOS deviceTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 14, 2009·33 cites·19 claims
- 2291US10629723B2Schottky power MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Apr 21, 2020·7 cites·15 claims
- 2391US7335946B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 26, 2008·43 cites·4 claims
- 2491US7186609B2Method of fabricating trench junction barrier rectifierSILICONIX INC·Filed 2002·Granted Mar 6, 2007·57 cites·24 claims
- 2590US9324858B2Trench-gated MIS devicesBHALLA ANUP·Filed 2010·Granted Apr 26, 2016·8 cites·20 claims
- 2690US7952145B2MOS transistor device in common source configurationTEXAS INSTR LEHIGH VALLEY INC·Filed 2007·Granted May 31, 2011·44 cites·21 claims
- 2788US9825124B2Power device integration on a common substrateSILANNA ASIA PTE LTD·Filed 2016·Granted Nov 21, 2017·4 cites·14 claims
- 2888US8928116B2Power device integration on a common substrateI O SEMICONDUCTOR INC·Filed 2013·Granted Jan 6, 2015·17 cites·16 claims
- 2987US8692324B2Semiconductor devices having charge balanced structureKOREC JACEK·Filed 2008·Granted Apr 8, 2014·14 cites·24 claims
- 3087US6538300B1Precision high-frequency capacitor formed on semiconductor substrateVISHAY INTERTECHNOLOGY INC·Filed 2000·Granted Mar 25, 2003·39 cites·10 claims
- 3186US5471075ADual-channel emitter switched thyristor with trench gateUNIV NORTH CAROLINA STATE·Filed 1994·Granted Nov 28, 1995·74 cites·17 claims
- 3283US10290702B2Power device on bulk substrateSILANNA ASIA PTE LTD·Filed 2017·Granted May 14, 2019·4 cites·20 claims
- 3383US8722503B2Capacitors and methods of formingKOREC JACEK·Filed 2011·Granted May 13, 2014·7 cites·5 claims
- 3483US2023420497A1Power device integration on a common substrateSILANNA ASIA PTE LTD·Filed 2023·Application pending·0 cites
- 3581US6348712B1High density trench-gated power MOSFETSILICONIX INC·Filed 1999·Granted Feb 19, 2002·43 cites·9 claims
- 3680US5747831ASIC field-effect transistor array with ring type trenches and method of producing themDAIMLER BENZ AG·Filed 1995·Granted May 5, 1998·62 cites·22 claims
- 3779US8614480B2Power MOSFET with integrated gate resistor and diode-connected MOSFETWANG JUN·Filed 2012·Granted Dec 24, 2013·5 cites·16 claims
- 3877US11791377B2Power device integration on a common substrateSILANNA ASIA PTE LTD·Filed 2022·Granted Oct 17, 2023·0 cites·8 claims
- 3977US9385196B2Fast switching IGBT with embedded emitter shorting contacts and method for making sameKOREC JACEK·Filed 2012·Granted Jul 5, 2016·3 cites·10 claims
- 4077US8629019B2Method of forming self aligned contacts for a power MOSFETXU ROBERT Q·Filed 2002·Granted Jan 14, 2014·19 cites·32 claims
- 4177US8004063B2Precision high-frequency capacitor formed on semiconductor substrateVISHAY INTERTECHNOLOGY INC·Filed 2006·Granted Aug 23, 2011·6 cites·18 claims
- 4276US8367500B1Method of forming self aligned contacts for a power MOSFETVISHAY SILICONIX·Filed 2003·Granted Feb 5, 2013·18 cites·10 claims
- 4371US9136060B2Precision high-frequency capacitor formed on semiconductor substrateGOLDBERGER HAIM·Filed 2007·Granted Sep 15, 2015·4 cites·18 claims
- 4469US6621143B2Precision high-frequency capacitor on semiconductor substrateVISHAY INTERTECHNOLOGY INC·Filed 2002·Granted Sep 16, 2003·12 cites·5 claims
- 4569US6621142B2Precision high-frequency capacitor formed on semiconductor substrateVISHAY INTERTECHNOLOGY INC·Filed 2002·Granted Sep 16, 2003·12 cites·14 claims
- 4666US8547162B2Integration of MOSFETs in a source-down configurationKOREC JACEK·Filed 2010·Granted Oct 1, 2013·2 cites·4 claims
- 4766US7151036B1Precision high-frequency capacitor formed on semiconductor substrateVISHAY SILICONIX·Filed 2003·Granted Dec 19, 2006·15 cites·7 claims
- 4865US6858471B1Semiconductor substrate with trenches for reducing substrate resistanceVISHAY SILICONIX·Filed 2002·Granted Feb 22, 2005·11 cites·38 claims
- 4963US11302775B2Power device integration on a common substrateSILANNA ASIA PTE LTD·Filed 2019·Granted Apr 12, 2022·0 cites·8 claims
- 5061US7642164B1Method of forming self aligned contacts for a power MOSFETVISHAY SILICONIX·Filed 2004·Granted Jan 5, 2010·7 cites·10 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →