Inventor · disambiguated record
Jang-Eun Lee
Also filed as: LEE JANG E · LEE JANG EUN · LEE JANG Y
55 granted patents·19 pending applications·857 citations·filing 1999–2024
98Inventor score
Top patents by PatentIndex Score
74 records- 0198US7351594B2Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 1, 2008·102 cites·29 claims
- 0297US7495984B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·54 cites·15 claims
- 0397US7352021B2Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·96 cites·14 claims
- 0496US8334148B2Methods of forming pattern structuresJEONG JUN-HO·Filed 2011·Granted Dec 18, 2012·59 cites·13 claims
- 0596US7952914B2Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·45 cites·27 claims
- 0695US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0792US12014988B2Semiconductor device having a graphene film and method for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·19 claims
- 0891US7672155B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·23 cites·4 claims
- 0990US8174875B2Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methodsBAEK IN-GYU·Filed 2011·Granted May 8, 2012·12 cites·13 claims
- 1090US7473597B2Method of forming via structures and method of fabricating phase change memory devices incorporating such via structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 6, 2009·21 cites·18 claims
- 1189US8796042B2Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the sameSHIN HEE-JU·Filed 2011·Granted Aug 5, 2014·18 cites·17 claims
- 1289US7378698B2Magnetic tunnel junction and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·51 cites·8 claims
- 1388US6464794B1Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 15, 2002·75 cites·9 claims
- 1487US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 1587US7871866B2Method of manufacturing semiconductor device having transition metal oxide layer and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·10 cites·27 claims
- 1687US6756292B2Method of forming a quantum dot and a gate electrode using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 29, 2004·46 cites·23 claims
- 1785US9373781B2Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 21, 2016·9 cites·13 claims
- 1884US9065039B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2014·Granted Jun 23, 2015·5 cites·6 claims
- 1983US8345467B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·6 cites·7 claims
- 2083US8083962B2Method for forming minute pattern and method for forming semiconductor memory device using the sameLEE JANG-EUN·Filed 2007·Granted Dec 27, 2011·11 cites·33 claims
- 2182US8288289B2Method of fabricating semiconductor deviceJEONG JUN-HO·Filed 2011·Granted Oct 16, 2012·8 cites·20 claims
- 2280US2025071970A1Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2378US7791923B2Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory elementSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·17 claims
- 2478US7750336B2Resistive memory devices and methods of forming resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·6 cites·9 claims
- 2578US6291342B2Methods of forming titanium nitride composite layers using composite gases having increasing TiCl4 to NH3 ratiosSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 18, 2001·19 cites·2 claims
- 2677US8023311B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·7 cites·8 claims
- 2776US8772846B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2012·Granted Jul 8, 2014·4 cites·29 claims
- 2876US8614125B2Nonvolatile memory devices and methods of forming the sameYIM EUN-KYUNG·Filed 2008·Granted Dec 24, 2013·6 cites·5 claims
- 2976US7218556B2Method of writing to MRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 15, 2007·10 cites·20 claims
- 3074US7838863B2Semiconductor devices having resistive memory elementsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 23, 2010·6 cites·20 claims
- 3174US7612969B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·6 cites·1 claims
- 3273US9306155B2Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·2 cites·19 claims
- 3373US8035145B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·2 cites·19 claims
- 3473US7645619B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 12, 2010·5 cites·19 claims
- 3573US7141438B2Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·17 cites·16 claims
- 3671US12167587B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 3770US7701748B2Nonvolatile memory devices using variable resistors as storage elements and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·7 cites·25 claims
- 3870US7582890B2Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·34 claims
- 3966US8947914B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2012·Granted Feb 3, 2015·1 cites·16 claims
- 4065US6797109B2Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·7 cites·3 claims
- 4165US6207557B1Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO INC·Filed 1999·Granted Mar 27, 2001·27 cites·16 claims
- 4264US9818931B2Method and system for providing magnetic junctions using thermally assisted spin transfer torque switchingSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 14, 2017·2 cites·21 claims
- 4364US8772887B2Magnetic deviceLIM WOO-CHANG·Filed 2012·Granted Jul 8, 2014·1 cites·17 claims
- 4462US7372090B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·2 cites·12 claims
- 4559US8697484B2Method and system for setting a pinned layer in a magnetic tunneling junctionAPALKOV DMYTRO·Filed 2011·Granted Apr 15, 2014·2 cites·8 claims
- 4656US2024306370A1Semiconductor memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4755US11854979B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·17 claims
- 4854US9356228B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2015·Granted May 31, 2016·0 cites·15 claims
- 4952US9159914B2Nonvolatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 13, 2015·0 cites·16 claims
- 5052US2006278341A1Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →