Inventor · disambiguated record
James Pan
Also filed as: PAN JAMES · PAN JAMES N · PAN JAMES NAN HSI
77 granted patents·12 pending applications·1,663 citations·filing 1997–2019
99Inventor score
Files withADVANCED MICRO DEVICES INC37PAN JAMES16MICRON TECHNOLOGY INC14FAIRCHILD SEMICONDUCTOR9GLOBALFOUNDRIES INC2
Top patents by PatentIndex Score
89 records- 0198US7994573B2Structure and method for forming power devices with carbon-containing regionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Aug 9, 2011·100 cites·13 claims
- 0297US7772668B2Shielded gate trench FET with multiple channelsFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Aug 10, 2010·46 cites·22 claims
- 0396US7078299B2Formation of finFET using a sidewall epitaxial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 18, 2006·118 cites·11 claims
- 0495US7936009B2Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric thereinFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 3, 2011·35 cites·23 claims
- 0595US6855982B1Self aligned double gate transistor having a strained channel region and process thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 15, 2005·103 cites·20 claims
- 0694US6955969B2Method of growing as a channel region to reduce source/drain junction capacitanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 18, 2005·89 cites·16 claims
- 0793US8329538B2Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric thereinPAN JAMES·Filed 2011·Granted Dec 11, 2012·15 cites·16 claims
- 0893US7138302B2Method of fabricating an integrated circuit channel regionADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 21, 2006·70 cites·20 claims
- 0993US6929992B1Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shiftADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 16, 2005·78 cites·4 claims
- 1093US6830998B1Gate dielectric quality for replacement metal gate transistorsADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 14, 2004·75 cites·9 claims
- 1193US6727560B1Engineered metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 27, 2004·64 cites·9 claims
- 1291US8084795B2Resonant cavity complementary optoelectronic transistorsPAN JAMES·Filed 2009·Granted Dec 27, 2011·20 cites·3 claims
- 1391US6943087B1Semiconductor on insulator MOSFET having strained silicon channelADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·59 cites·15 claims
- 1491US6864163B1Fabrication of dual work-function metal gate structure for complementary field effect transistorsADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 8, 2005·47 cites·22 claims
- 1590US8772868B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Jul 8, 2014·12 cites·20 claims
- 1690US7807576B2Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devicesFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Oct 5, 2010·16 cites·20 claims
- 1790US7202123B1Mesa isolation technology for extremely thin silicon-on-insulator semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 10, 2007·45 cites·20 claims
- 1889US7825465B2Structure and method for forming field effect transistor with low resistance channel regionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Nov 2, 2010·11 cites·14 claims
- 1989US7601574B2Methods for fabricating a stress enhanced MOS transistorGLOBALFOUNDRIES INC·Filed 2006·Granted Oct 13, 2009·17 cites·20 claims
- 2089US7091118B1Replacement metal gate transistor with metal-rich silicon layer and method for making the sameIBM·Filed 2004·Granted Aug 15, 2006·49 cites·19 claims
- 2189US7033869B1Strained silicon semiconductor on insulator MOSFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·48 cites·12 claims
- 2288US9224853B2Shielded gate trench FET with multiple channelsPAN JAMES·Filed 2012·Granted Dec 29, 2015·8 cites·20 claims
- 2387US6936516B1Replacement gate strained silicon finFET processADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 30, 2005·38 cites·20 claims
- 2486US7033888B2Engineered metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·33 cites·11 claims
- 2585US8053849B2Replacement metal gate transistors with reduced gate oxide leakageADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 8, 2011·9 cites·17 claims
- 2685US7060571B1Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 13, 2006·35 cites·18 claims
- 2784US7071086B2Method of forming a metal gate structure with tuning of work function by silicon incorporationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 4, 2006·32 cites·14 claims
- 2883US7544572B2Multi-operational mode transistor with multiple-channel device structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 9, 2009·10 cites·26 claims
- 2983US7329582B1Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive materialADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 12, 2008·9 cites·15 claims
- 3083US6861350B1Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 1, 2005·32 cites·20 claims
- 3182US7033919B1Fabrication of dual work-function metal gate structure for complementary field effect transistorsYU ALLEN S·Filed 2005·Granted Apr 25, 2006·11 cites·10 claims
- 3280US7015078B1Silicon on insulator substrate having improved thermal conductivity and method of its formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 21, 2006·28 cites·15 claims
- 3380US6881277B2Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfacesMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 19, 2005·14 cites·16 claims
- 3479US7943993B2Structure and method for forming field effect transistor with low resistance channel regionFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted May 17, 2011·3 cites·18 claims
- 3577US6146967ASelective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSGMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 14, 2000·36 cites·50 claims
- 3676US8124473B2Strain enhanced semiconductor devices and methods for their fabricationPAN JAMES N·Filed 2007·Granted Feb 28, 2012·9 cites·13 claims
- 3775US6900143B1Strained silicon MOSFETs having improved thermal dissipationADVANCED MICRO DEVICES INC·Filed 2003·Granted May 31, 2005·18 cites·15 claims
- 3874US7078278B2Dual-metal CMOS transistors with tunable gate electrode work function and method of making the sameADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 18, 2006·18 cites·10 claims
- 3973US8097500B2Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor deviceANDO TAKASHI·Filed 2008·Granted Jan 17, 2012·6 cites·13 claims
- 4073US7932556B2Structure and method for forming power devices with high aspect ratio contact openingsFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Apr 26, 2011·5 cites·20 claims
- 4173US6893910B1One step deposition method for high-k dielectric and metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted May 17, 2005·15 cites·18 claims
- 4273US6355182B2High selectivity etching process for oxidesMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 12, 2002·12 cites·7 claims
- 4371US6828193B2Methods of forming hemispherical grained silicon on a template on a semiconductor work objectMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 7, 2004·11 cites·42 claims
- 4470US7012007B1Strained silicon MOSFET having improved thermal conductivity and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 14, 2006·16 cites·9 claims
- 4570US6217784B1High selectivity etching process for oxidesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 17, 2001·10 cites·5 claims
- 4668US8669623B2Structure related to a thick bottom dielectric (TBD) for trench-gate devicesPAN JAMES·Filed 2010·Granted Mar 11, 2014·2 cites·30 claims
- 4768US7018887B1Dual metal CMOS transistors with silicon-metal-silicon stacked gate electrodeADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·13 cites·21 claims
- 4867US7622348B2Methods for fabricating an integrated circuitADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 24, 2009·2 cites·20 claims
- 4965US8278702B2High density trench field effect transistorPAN JAMES·Filed 2008·Granted Oct 2, 2012·2 cites·8 claims
- 5065US6126847AHigh selectivity etching process for oxidesMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 3, 2000·22 cites·16 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →