Inventor · disambiguated record
Jacob Smith
Also filed as: SMITH JACOB · SMITH JACOB W
14 granted patents·18 pending applications·657 citations·filing 2004–2012
93Inventor score
Top patents by PatentIndex Score
32 records- 0196US7601652B2Method for treating substrates and films with photoexcitationAPPLIED MATERIALS INC·Filed 2005·Granted Oct 13, 2009·486 cites·18 claims
- 0294US7364991B2Buffer-layer treatment of MOCVD-grown nitride structuresAPPLIED MATERIALS INC·Filed 2006·Granted Apr 29, 2008·30 cites·18 claims
- 0393US7674352B2System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Mar 9, 2010·25 cites·5 claims
- 0493US7560364B2Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Jul 14, 2009·27 cites·23 claims
- 0592US7585769B2Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPEAPPLIED MATERIALS INC·Filed 2006·Granted Sep 8, 2009·21 cites·38 claims
- 0690US7416995B2Method for fabricating controlled stress silicon nitride filmsAPPLIED MATERIALS INC·Filed 2005·Granted Aug 26, 2008·19 cites·18 claims
- 0786US7459380B2Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Dec 2, 2008·16 cites·28 claims
- 0881US7470599B2Dual-side epitaxy processes for production of nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2006·Granted Dec 30, 2008·8 cites·29 claims
- 0978US7781016B2Method for measuring precursor amounts in bubbler sourcesAPPLIED MATERIALS INC·Filed 2006·Granted Aug 24, 2010·3 cites·21 claims
- 1078US7374960B1Stress measurement and stress balance in filmsAPPLIED MATERIALS INC·Filed 2006·Granted May 20, 2008·6 cites·17 claims
- 1172US7575982B2Stacked-substrate processes for production of nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2006·Granted Aug 18, 2009·4 cites·12 claims
- 1265US7488690B2Silicon nitride film with stress controlAPPLIED MATERIALS INC·Filed 2004·Granted Feb 10, 2009·11 cites·30 claims
- 1356US2006102076A1Apparatus and method for the deposition of silicon nitride filmsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 1455US9892941B2Multi-zone resistive heaterCUI ANQING·Filed 2009·Granted Feb 13, 2018·1 cites·20 claims
- 1552US2008296594A1Nitride optoelectronic devices with backside depositionAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 1651US2007254093A1MOCVD reactor with concentration-monitor feedbackAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1751US2007254100A1MOCVD reactor without metalorganic-source temperature controlAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1851US2007256635A1UV activation of NH3 for III-N depositionAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1950US7399653B2Nitride optoelectronic devices with backside depositionAPPLIED MATERIALS INC·Filed 2006·Granted Jul 15, 2008·0 cites·14 claims
- 2048US2005109276A1Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamberAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 2148US2007082507A1Method and apparatus for the low temperature deposition of doped silicon nitride filmsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2248US2007240631A1Epitaxial growth of compound nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2348US2006281310A1Rotating substrate support and methods of useAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2446US2011070721A1Epitaxial growth of compound nitride semiconductor structuresAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 2544US2012291709A1Rotating substrate support and methods of useSMITH JACOB·Filed 2012·Application pending·0 cites
- 2643US2008119059A1Low thermal budget chemical vapor deposition processingSMITH JACOB W·Filed 2006·Application pending·0 cites
- 2743US2008050889A1Hotwall reactor and method for reducing particle formation in GaN MOCVDAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2842US2007241351A1Double-sided nitride structuresAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2941US2008124453A1In-situ detection of gas-phase particle formation in nitride film depositionAPPLIED MATRIALS INC·Filed 2006·Application pending·0 cites
- 3041US2007125762A1Multi-zone resistive heaterAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3140US2010224130A1Rotating substrate support and methods of useSMITH JACOB·Filed 2010·Application pending·0 cites
- 3239US2006286819A1Method for silicon based dielectric deposition and clean with photoexcitationAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →