Inventor · disambiguated record
Jeong-Seok Na
Also filed as: NA JEONG-SEOK
15 granted patents·6 pending applications·385 citations·filing 2003–2025
94Inventor score
Top patents by PatentIndex Score
21 records- 0197US9748137B2Method for void-free cobalt gap fillLAM RES CORP·Filed 2015·Granted Aug 29, 2017·26 cites·18 claims
- 0296US10242879B2Methods and apparatus for forming smooth and conformal cobalt film by atomic layer depositionLAM RES CORP·Filed 2017·Granted Mar 26, 2019·18 cites·19 claims
- 0395US10731250B2Depositing ruthenium layers in interconnect metallizationLAM RES CORP·Filed 2018·Granted Aug 4, 2020·12 cites·25 claims
- 0495US9349637B2Method for void-free cobalt gap fillLAM RES CORP·Filed 2014·Granted May 24, 2016·37 cites·18 claims
- 0594US6818531B1Method for manufacturing vertical GaN light emitting diodesSAMSUNG ELECTRO MECH·Filed 2003·Granted Nov 16, 2004·182 cites·10 claims
- 0693US12334351B2Molybdenum depositionLAM RES CORP·Filed 2020·Granted Jun 17, 2025·3 cites·18 claims
- 0793US10283404B2Selective deposition of WCN barrier/adhesion layer for interconnectLAM RES CORP·Filed 2017·Granted May 7, 2019·19 cites·20 claims
- 0893US8747964B2Ion-induced atomic layer deposition of tantalumPARK KIE JIN·Filed 2011·Granted Jun 10, 2014·33 cites·17 claims
- 0993US7112456B2Vertical GaN light emitting diode and method for manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Sep 26, 2006·24 cites·11 claims
- 1090US10438847B2Manganese barrier and adhesion layers for cobaltLAM RES CORP·Filed 2017·Granted Oct 8, 2019·6 cites·13 claims
- 1186US10229826B2Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxideLAM RES CORP·Filed 2017·Granted Mar 12, 2019·4 cites·19 claims
- 1281US9255326B2Systems and methods for remote plasma atomic layer depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Feb 9, 2016·2 cites·12 claims
- 1371US2025323046A1Molybdenum depositionLAM RES CORP·Filed 2025·Application pending·0 cites
- 1470US7091055B2White light emitting diode and method for manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Aug 15, 2006·4 cites·22 claims
- 1563US6902989B2Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrateSAMSUNG ELECTRO MECH·Filed 2003·Granted Jun 7, 2005·9 cites·14 claims
- 1656US6914262B2White light emitting diode and method for manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2003·Granted Jul 5, 2005·6 cites·24 claims
- 1751US2025183097A1Low resistivity contacts and interconnectsLAM RES CORP·Filed 2021·Application pending·0 cites
- 1849US2025259894A1Molybdenum integration and void-free fillLAM RES CORP·Filed 2023·Application pending·0 cites
- 1949US2023326790A1Low resistivity contacts and interconnectsLAM RES CORP·Filed 2021·Application pending·0 cites
- 2047US2025183041A1Low resistance molybdenum deposition for logic source/drain contactsLAM RES CORP·Filed 2023·Application pending·0 cites
- 2145US2024047269A1Molybdenum deposition in featuresLAM RES CORP·Filed 2022·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jeong-Seok Na files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →