Inventor · disambiguated record
Jiacen Guo
Also filed as: GUO JIACEN
32 granted patents·8 pending applications·13 citations·filing 2021–2024
93Inventor score
Top patents by PatentIndex Score
40 records- 0192US11942157B2Variable bit line bias for nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 26, 2024·3 cites·20 claims
- 0291US11955184B2Memory cell group read with compensation for different programming speedsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 9, 2024·4 cites·20 claims
- 0391US11862249B2Non-volatile memory with staggered ramp down at the end of pre-chargingSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 2, 2024·2 cites·20 claims
- 0487US11923019B2Data retention reliabilitySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0582US11894072B2Two-side staircase pre-charge in sub-block mode of three-tier non-volatile memory architectureSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·1 cites·20 claims
- 0680US11848059B2Techniques for erasing the memory cells of edge word linesSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 19, 2023·1 cites·18 claims
- 0761US12468462B2Multi-tier sub-block mode operationSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 0861US12469560B2Non-volatile memory with dummy word line assisted pre-chargeSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 0961US12254931B2Three-bit-per-cell programming using a four-bit-per-cell programming algorithmSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 1060US12469559B2Non-volatile memory with sub-blocksSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 11, 2025·0 cites·19 claims
- 1160US12431203B2Memory program-verify with adaptive sense time based on row locationSANDISK TECHNOLOGIES INC·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 1259US12229415B2Hole channel pre-charge to enable large-volume in-place data sanitization of non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1358US12176037B2Non-volatile memory with different word line to word line pitchesSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 24, 2024·0 cites·16 claims
- 1457US12512168B2Programming techniques to improve erase state upper tails in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2023·Granted Dec 30, 2025·0 cites·16 claims
- 1557US11901016B2Fast open block erase in non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 1656US12354681B2Channel pre-charge process in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1756US12205654B2MLC programming techniques in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 21, 2025·0 cites·12 claims
- 1855US11972813B2Systems and methods for adapting sense timeSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·0 cites·17 claims
- 1955US11862260B2Audit techniques for read disturb detection in an open memory blockSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 2054US11972806B2Read techniques to reduce read errors in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 2152US12112800B2High speed multi-level cell (MLC) programming in non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2252US12100461B2Non-volatile memory with suspension period during programmingSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 24, 2024·0 cites·12 claims
- 2352US11972819B2Non-volatile memory with one sided phased ramp down after program-verifySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 2452US2025336454A1State dependent verify voltage ramping time periods for a program-verify operation for performance gainSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2551US12469568B2Non-volatile memory with early ramp for improved performanceSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 11, 2025·0 cites·19 claims
- 2651US12119065B2Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cellsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 15, 2024·0 cites·9 claims
- 2751US2025266110A1Single-level memory cell error on-chip detectionWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 2849US12243591B2In-place write techniques without erase in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2949US11972820B2Non-volatile memory with tier-wise ramp down after program-verifySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 3049US2025273279A1Sub-block mode back pattern effect compensationSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3149US2025054556A1State-dependent fail bit count criteria for memory apparatus program performance gainWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3248US12142315B2Low power multi-level cell (MLC) programming in non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 12, 2024·0 cites·18 claims
- 3348US2024203506A1Non-volatile memory with hole pre-charge and isolated signal linesSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 3448US2024379175A1Erase saturation mitigation in non-volatile memoryWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3548US2024363178A1In situ data refresh without erase/program cyclesWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3648US2024194278A1Memory program-verify with adaptive sense time based on distance from a word line driverSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 3747US12394489B2In-place write techniques without erase in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 3847US11837292B2String or block or die level dependent source line voltage for neighbor drain side select gate interference compensationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 3946US12112812B2Non-volatile memory with early dummy word line ramp down after prechargeSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 4044US11881271B2Non-volatile memory with engineered channel gradientSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →