Inventor · disambiguated record
Joseph R. Abel
Also filed as: ABEL JOSEPH · ABEL JOSEPH R · ABEL JOSEPH ROSS
21 granted patents·15 pending applications·43 citations·filing 2012–2025
91Inventor score
Top patents by PatentIndex Score
36 records- 0197US10269559B2Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layerLAM RES CORP·Filed 2017·Granted Apr 23, 2019·28 cites·20 claims
- 0291US10658172B2Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layerLAM RES CORP·Filed 2019·Granted May 19, 2020·7 cites·21 claims
- 0384US11373862B2Surface modified depth controlled deposition for plasma based depositionLAM RES CORP·Filed 2020·Granted Jun 28, 2022·1 cites·20 claims
- 0483US10727046B2Surface modified depth controlled deposition for plasma based depositionLAM RES CORP·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 0581US12412742B2Impurity reduction in silicon-containing filmsLAM RES CORP·Filed 2021·Granted Sep 9, 2025·1 cites·20 claims
- 0674US11293098B2Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etchingLAM RES CORP·Filed 2018·Granted Apr 5, 2022·1 cites·9 claims
- 0773US2025046613A1Method for providing doped silicon using a diffusion barrier layerLAM RES CORP·Filed 2024·Application pending·0 cites
- 0872US2024347337A1Low-k ald gap-fill methods and materialLAM RES CORP·Filed 2024·Application pending·0 cites
- 0971US2022301866A1Gas feed system for surface modified depth controlled deposition for plasma based depositionLAM RES CORP·Filed 2022·Application pending·0 cites
- 1068US12473633B2Plasma enhanced atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2022·Granted Nov 18, 2025·0 cites·25 claims
- 1168US12049699B2Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etchingLAM RES CORP·Filed 2022·Granted Jul 30, 2024·0 cites·9 claims
- 1268US11651963B2Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based filmLAM RES CORP·Filed 2021·Granted May 16, 2023·0 cites·12 claims
- 1368US9495069B2Expanded icon functionalityESCOBEDO MIGUEL ANGEL·Filed 2012·Granted Nov 15, 2016·3 cites·20 claims
- 1468US2025266274A1Dynamic process control in semiconductor manufacturingLAM RES CORP·Filed 2025·Application pending·0 cites
- 1562US12125705B2Method for providing doped silicon using a diffusion barrier layerLAM RES CORP·Filed 2020·Granted Oct 22, 2024·0 cites·20 claims
- 1661US12322619B2Dynamic process control in semiconductor manufacturingLAM RES CORP·Filed 2020·Granted Jun 3, 2025·0 cites·21 claims
- 1759US12020923B2Low-κ ALD gap-fill methods and materialLAM RES CORP·Filed 2019·Granted Jun 25, 2024·0 cites·18 claims
- 1859US10978302B2Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based filmLAM RES CORP·Filed 2018·Granted Apr 13, 2021·0 cites·12 claims
- 1957US12431349B2In-situ control of film properties during atomic layer depositionLAM RES CORP·Filed 2020·Granted Sep 30, 2025·0 cites·9 claims
- 2055US12417943B2Reducing intralevel capacitance in semiconductor devicesLAM RES CORP·Filed 2021·Granted Sep 16, 2025·0 cites·20 claims
- 2153US2025179632A1Surface inhibition atomic layer depositionLAM RES CORP·Filed 2023·Application pending·0 cites
- 2253US2025062118A1High pressure plasma inhibitionLAM RES CORP·Filed 2022·Application pending·0 cites
- 2351US12252782B2In-situ PECVD cap layerLAM RES CORP·Filed 2020·Granted Mar 18, 2025·0 cites·18 claims
- 2451US2024167153A1In-situ film annealing in substrate processingLAM RES CORP·Filed 2022·Application pending·0 cites
- 2550US2025054752A1Method to smooth sidewall roughness and maintain reentrant structures during dielectric gap fillLAM RES CORP·Filed 2022·Application pending·0 cites
- 2649US12288685B2Modifying hydrophobicity of a wafer surface using an organosilicon precursorLAM RES CORP·Filed 2019·Granted Apr 29, 2025·0 cites·14 claims
- 2748US2025154644A1High pressure inert oxidation and in-situ annealing process to improve film seam quality and werLAM RES CORP·Filed 2023·Application pending·0 cites
- 2847US12087574B2Oxidative conversion in atomic layer deposition processesLAM RES CORP·Filed 2019·Granted Sep 10, 2024·0 cites·12 claims
- 2947US2025230546A1Selective control of multi-station processing chamber componentsLAM RES CORP·Filed 2022·Application pending·0 cites
- 3045US2023175117A1Seam mitigation and integrated liner for gap fillLAM RES CORP·Filed 2021·Application pending·0 cites
- 3145US2023087976A1Non-plasma enhanced deposition for recess etch matchingLAM RES CORP·Filed 2021·Application pending·0 cites
- 3244US12400880B2Apparatuses for uniform fluid delivery in a multi-station semiconductor processing chamberLAM RES CORP·Filed 2022·Granted Aug 26, 2025·0 cites·24 claims
- 3344US10636686B2Method monitoring chamber driftLAM RES CORP·Filed 2018·Granted Apr 28, 2020·0 cites·5 claims
- 3442US2022384186A1Methods to enable seamless high quality gapfillLAM RES CORP·Filed 2020·Application pending·0 cites
- 3542US2021398780A1Method andd apparatus for atomic layer deposition or chemical vapor depositionLAM RES CORP·Filed 2019·Application pending·0 cites
- 3641US2023154754A1Loss prevention during atomic layer depositionLAM RES CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →