Gas feed system for surface modified depth controlled deposition for plasma based deposition

Abstract

A gas feed system for supplying process gases to a process chamber for an atomic layer deposition (ALD) process is provided, including: a central gas feed configured to deliver the process gases to a showerhead; the central gas feed having a first manifold enabling delivery of an ALD precursor gas into the central gas feed, a second manifold enabling delivery of a fluorine-containing plasma precursor gas into the central gas feed, a third manifold enabling delivery of an inhibition or passivation gas into the central gas feed, a fourth manifold enabling delivery of an oxidizer gas into the central gas feed, and a feed line connecting to the fourth manifold, the feed line enabling delivery of an inert gas into the central gas feed.

What is claimed is: 
     
         1 . A gas feed system for supplying process gases to a process chamber for an atomic layer deposition (ALD) process, comprising:
 a central gas feed configured to deliver the process gases to a showerhead;   said central gas feed having,
 a first manifold enabling delivery of an ALD precursor gas into the central gas feed, 
 a second manifold enabling delivery of a fluorine-containing plasma precursor gas into the central gas feed, 
 a third manifold enabling delivery of an inhibition or passivation gas into the central gas feed, 
 a fourth manifold enabling delivery of an oxidizer gas into the central gas feed, and 
 a feed line connecting to the fourth manifold, the feed line enabling delivery of an inert gas into the central gas feed. 
   
     
     
         2 . The gas feed system of  claim 1 , wherein the central gas feed further includes:
 a first segment connecting between the first manifold and the showerhead;   a second segment connecting between the second manifold and the first manifold;   a third segment connecting between the third manifold and the second manifold;   a fourth segment connecting between the fourth manifold and the third manifold.   
     
     
         3 . The gas feed system of  claim 2 , further comprising:
 a first valve that controls the delivery of the ALD precursor gas to the first manifold;   a second valve that controls the delivery of the fluorine-containing plasma precursor gas to the second manifold;   a third valve that controls the delivery of the inhibition or passivation gas to the third manifold;   a fourth valve that controls the delivery of the oxidizer gas to the fourth manifold;   a fifth valve that controls the delivery of the inert gas to the feed line.   
     
     
         4 . The gas feed system of  claim 3 , further comprising:
 a second feed line connecting to the first manifold;   wherein the first valve controls the delivery of the ALD precursor into the second feed line;   a sixth valve that controls delivery of the inert gas into the second feed line, said delivery of the inert gas into the second feed line configured to purge the second feed line following the delivery of the ALD precursor into the second feed line.   
     
     
         5 . The gas feed system of  claim 3 , further comprising:
 a controller that controls operation of the first, second, third, fourth, and fifth valves.   
     
     
         6 . The gas feed system of  claim 5 , wherein the controller is configured to control said valves to enable performing a gap fill process on a substrate, including:
 (a) delivering the ALD precursor gas and the oxidizer gas to the process chamber, to enable consecutively perform a plurality of cycles of an ALD process,   (b) delivering the inert gas to the process chamber to enable purging process gases from the ALD process from the process chamber,   (c) delivering the fluorine-containing plasma precursor gas to the process chamber, to enable generating a fluorine plasma to perform a plasma treatment on the substrate,   (d) delivering the inert gas to the process chamber to enable purging process gases from the plasma treatment from the process chamber,   (e) repeating, in order, operations (a) through (d) until a predefined plurality of cycles of operations (a) through (d) has been performed.   
     
     
         7 . A gas feed system for supplying process gases to a process chamber for an atomic layer deposition (ALD) process, comprising:
 a central gas feed configured to deliver the process gases to a showerhead;   said central gas feed having,
 a first manifold enabling delivery of an ALD precursor gas into the central gas feed, 
 a second manifold enabling delivery of a fluorine-containing plasma precursor gas into the central gas feed, 
 a third manifold enabling delivery of an oxidizer gas into the central gas feed, and 
 a feed line connecting to the fourth manifold, the feed line enabling delivery of an inert gas into the central gas feed. 
   
     
     
         8 . The gas feed system of  claim 7 , wherein the central gas feed further includes:
 a first segment connecting between the first manifold and the showerhead;   a second segment connecting between the second manifold and the first manifold;   a third segment connecting between the third manifold and the second manifold.   
     
     
         9 . The gas feed system of  claim 8 , further comprising:
 a first valve that controls the delivery of the ALD precursor gas to the first manifold;   a second valve that controls the delivery of the fluorine-containing plasma precursor gas to the second manifold;   a third valve that controls the delivery of the oxidizer gas to the fourth manifold;   a fourth valve that controls the delivery of the inert gas to the feed line.   
     
     
         10 . The gas feed system of  claim 9 , further comprising:
 a second feed line connecting to the first manifold;   wherein the first valve controls the delivery of the ALD precursor into the second feed line;   a fifth valve that controls delivery of the inert gas into the second feed line, said delivery of the inert gas into the second feed line configured to purge the second feed line following the delivery of the ALD precursor into the second feed line.   
     
     
         11 . The gas feed system of  claim 9 , further comprising:
 a controller that controls operation of the first, second, third, and fourth valves.   
     
     
         12 . The gas feed system of  claim 11 , wherein the controller is configured to control said valves to enable performing a gap fill process on a substrate, including:
 (a) delivering the ALD precursor gas and the oxidizer gas to the process chamber, to enable consecutively perform a plurality of cycles of an ALD process,   (b) delivering the inert gas to the process chamber to enable purging process gases from the ALD process from the process chamber,   (c) delivering the fluorine-containing plasma precursor gas to the process chamber, to enable generating a fluorine plasma to perform a plasma treatment on the substrate,   (d) delivering the inert gas to the process chamber to enable purging process gases from the plasma treatment from the process chamber,   (e) repeating, in order, operations (a) through (d) until a predefined plurality of cycles of operations (a) through (d) has been performed.   
     
     
         13 . A gas feed system for supplying process gases to a process chamber for an atomic layer deposition (ALD) process, comprising:
 a central gas feed configured to deliver the process gases to a showerhead;   said central gas feed having,
 a first manifold enabling delivery of an ALD precursor gas into the central gas feed, 
 a second manifold enabling delivery of a fluorine-containing plasma precursor gas into the central gas feed, 
 a third manifold enabling delivery of an oxidizer gas into the central gas feed, and 
 a feed line connecting to the fourth manifold, the feed line enabling delivery of an inert gas into the central gas feed; 
   a first valve that controls the delivery of the ALD precursor gas to the first manifold;   a second valve that controls the delivery of the fluorine-containing plasma precursor gas to the second manifold;   a third valve that controls the delivery of the oxidizer gas to the fourth manifold;   a fourth valve that controls the delivery of the inert gas to the feed line;   a controller that controls operation of the first, second, third, and fourth valves, wherein the controller is configured to control said valves to enable performing a gap fill process on a substrate, including,
 (a) delivering the ALD precursor gas and the oxidizer gas to the process chamber, to enable consecutively perform a plurality of cycles of an ALD process, 
 (b) delivering the inert gas to the process chamber to enable purging process gases from the ALD process from the process chamber, 
 (c) delivering the fluorine-containing plasma precursor gas to the process chamber, to enable generating a fluorine plasma to perform a plasma treatment on the substrate, 
 (d) delivering the inert gas to the process chamber to enable purging process gases from the plasma treatment from the process chamber, 
 (e) repeating, in order, operations (a) through (d) until a predefined plurality of cycles of operations (a) through (d) has been performed.