Inventor · disambiguated record
Joe Bloomquist
Also filed as: BLOOMQUIST JOE
7 granted patents·2 pending applications·40 citations·filing 2006–2010
82Inventor score
Top patents by PatentIndex Score
9 records- 0185US7696052B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 13, 2010·10 cites·13 claims
- 0284US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 0382US7863171B2SOI transistor having a reduced body potential and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 4, 2011·11 cites·7 claims
- 0475US7556996B2Field effect transistor comprising a stressed channel region and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 7, 2009·7 cites·6 claims
- 0556US8138571B2Semiconductor device comprising isolation trenches inducing different types of strainSCHWAN CHRISTOPH·Filed 2009·Granted Mar 20, 2012·1 cites·14 claims
- 0646US8274120B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsWEI ANDY·Filed 2010·Granted Sep 25, 2012·0 cites·11 claims
- 0746US7732291B2Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regionsGLOBALFOUNDRIES INC·Filed 2006·Granted Jun 8, 2010·0 cites·9 claims
- 0845US2008299733A1Method of forming a semiconductor structure comprising an implantation of ions in a material layer to be etchedPRESS PATRICK·Filed 2008·Application pending·0 cites
- 0942US2007281472A1Method of increasing transistor performance by dopant activation after silicidationPRESS PATRICK·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →