Inventor · disambiguated record
John Bruley
Also filed as: BRULEY JOHN
20 granted patents·9 pending applications·135 citations·filing 2003–2023
94Inventor score
Top patents by PatentIndex Score
29 records- 0194US7247946B2On-chip Cu interconnection using 1 to 5 nm thick metal capIBM·Filed 2005·Granted Jul 24, 2007·35 cites·14 claims
- 0292US9551674B1Method of producing an un-distorted dark field strain map at high spatial resolution through dark field electron holographyGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·6 cites·20 claims
- 0392US8741713B2Reliable physical unclonable function for device authenticationBRULEY JOHN·Filed 2012·Granted Jun 3, 2014·23 cites·23 claims
- 0491US9812530B2High germanium content silicon germanium finsIBM·Filed 2016·Granted Nov 7, 2017·6 cites·15 claims
- 0590US11101219B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2019·Granted Aug 24, 2021·3 cites·18 claims
- 0690US10269714B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2016·Granted Apr 23, 2019·4 cites·9 claims
- 0790US9324843B2High germanium content silicon germanium finsIBM·Filed 2014·Granted Apr 26, 2016·8 cites·15 claims
- 0889US10985105B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2018·Granted Apr 20, 2021·3 cites·18 claims
- 0977US12062614B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2021·Granted Aug 13, 2024·0 cites·19 claims
- 1076US11862567B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 1172US6878624B1Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSiIBM·Filed 2003·Granted Apr 12, 2005·20 cites·20 claims
- 1271US7015469B2Electron holography methodIBM·Filed 2004·Granted Mar 21, 2006·8 cites·5 claims
- 1371US2023397506A1Spurious junction prevention via in-situ ion millingIBM·Filed 2023·Application pending·0 cites
- 1470US6875982B2Electron microscope magnification standard providing precise calibration in the magnification range 5000X-2000,000XIBM·Filed 2003·Granted Apr 5, 2005·8 cites·20 claims
- 1567US6884641B2Site-specific methodology for localization and analyzing junction defects in mosfet devicesIBM·Filed 2003·Granted Apr 26, 2005·11 cites·20 claims
- 1664US2025040444A1Free layer in magnetoresistive random-access memoryIBM·Filed 2023·Application pending·0 cites
- 1761US11765985B2Spurious junction prevention via in-situ ion millingIBM·Filed 2020·Granted Sep 19, 2023·0 cites·11 claims
- 1857US11552237B2Grain size control of superconducting materials in thin films for Josephson junctionsIBM·Filed 2020·Granted Jan 10, 2023·0 cites·25 claims
- 1954US2024334837A1Magnetic tunnel junction free layer of multiple materialsIBM·Filed 2023·Application pending·0 cites
- 2053US12048254B2Sacrificial material facilitating protection of a substrate in a qubit deviceIBM·Filed 2020·Granted Jul 23, 2024·0 cites·9 claims
- 2151US11152214B2Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor deviceIBM·Filed 2016·Granted Oct 19, 2021·0 cites·10 claims
- 2250US10505112B1CMOS compatible non-filamentary resistive memory stackIBM·Filed 2018·Granted Dec 10, 2019·0 cites·19 claims
- 2350US2017309723A1Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or iii-v channel of semiconductor deviceIBM·Filed 2017·Application pending·0 cites
- 2449US10529832B2Shallow, abrupt and highly activated tin extension implant junctionIBM·Filed 2016·Granted Jan 7, 2020·0 cites·13 claims
- 2544US2012326314A1Large-grain, low-resistivity tungsten on a conductive compoundBROWN STEPHEN L·Filed 2012·Application pending·0 cites
- 2642US2019273205A1ReRAM DEVICE RESISTIVITY CONTROL BY OXIDIZED ELECTRODEIBM·Filed 2018·Application pending·0 cites
- 2741US2012228773A1Large-grain, low-resistivity tungsten on a conductive compoundBROWN STEPHEN L·Filed 2011·Application pending·0 cites
- 2841US2019245056A1Ferroelectric devices free of extended grain boundariesIBM·Filed 2018·Application pending·0 cites
- 2938US2005054156A1Capacitor and fabrication method using ultra-high vacuum cvd of silicon nitrideIBM·Filed 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when John Bruley files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →