Inventor · disambiguated record
Josephine B. Chang
Also filed as: CHANG JOSEPHINE · CHANG JOSEPHINE B · CHANG JOSEPHINE BEA
250 granted patents·34 pending applications·3,320 citations·filing 2000–2022
99Inventor score
Top patents by PatentIndex Score
284 records- 0199US9564573B1Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubitsIBM·Filed 2015·Granted Feb 7, 2017·40 cites·10 claims
- 0299US8637384B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2012·Granted Jan 28, 2014·374 cites·13 claims
- 0399US8637930B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2011·Granted Jan 28, 2014·99 cites·14 claims
- 0499US8637359B2Fin-last replacement metal gate FinFET processCHANG JOSEPHINE B·Filed 2011·Granted Jan 28, 2014·71 cites·17 claims
- 0599US7923337B2Fin field effect transistor devices with self-aligned source and drain regionsIBM·Filed 2007·Granted Apr 12, 2011·234 cites·19 claims
- 0699US7892945B2Nanowire mesh device and method of fabricating sameIBM·Filed 2010·Granted Feb 22, 2011·97 cites·13 claims
- 0798US9748404B1Method for fabricating a semiconductor device including gate-to-bulk substrate isolationIBM·Filed 2016·Granted Aug 29, 2017·32 cites·18 claims
- 0898US8785981B1Non-replacement gate nanomesh field effect transistor with pad regionsIBM·Filed 2013·Granted Jul 22, 2014·49 cites·10 claims
- 0998US8669615B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·47 cites·15 claims
- 1098US8536029B1Nanowire FET and finFETCHANG JOSEPHINE B·Filed 2012·Granted Sep 17, 2013·48 cites·20 claims
- 1197US10381542B2Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubitsIBM·Filed 2015·Granted Aug 13, 2019·16 cites·17 claims
- 1297US9721888B2Trench silicide with self-aligned contact viasIBM·Filed 2015·Granted Aug 1, 2017·21 cites·15 claims
- 1397US9653547B1Integrated etch stop for capped gate and method for manufacturing the sameIBM·Filed 2016·Granted May 16, 2017·22 cites·17 claims
- 1497US9306164B1Electrode pair fabrication using directed self assembly of diblock copolymersIBM·Filed 2015·Granted Apr 5, 2016·22 cites·8 claims
- 1597US8809131B2Replacement gate fin first wire last gate all around devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 19, 2014·35 cites·26 claims
- 1697US8722472B2Hybrid CMOS nanowire mesh device and FINFET deviceCHANG JOSEPHINE B·Filed 2011·Granted May 13, 2014·40 cites·12 claims
- 1797US8658518B1Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·29 cites·20 claims
- 1897US8580624B2Nanowire FET and finFET hybrid technologyBANGSARUNTIP SARUNYA·Filed 2011·Granted Nov 12, 2013·36 cites·21 claims
- 1997US8551833B2Double gate planar field effect transistorsCHANG JOSEPHINE B·Filed 2011·Granted Oct 8, 2013·32 cites·17 claims
- 2097US8466012B1Bulk FinFET and SOI FinFET hybrid technologyCHANG JOSEPHINE B·Filed 2012·Granted Jun 18, 2013·40 cites·21 claims
- 2197US8395220B2Nanomesh SRAM cellCHANG JOSEPHINE·Filed 2012·Granted Mar 12, 2013·33 cites·19 claims
- 2297US8084308B2Single gate inverter nanowire meshCHANG JOSEPHINE·Filed 2009·Granted Dec 27, 2011·83 cites·9 claims
- 2397US7985633B2Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistorsIBM·Filed 2007·Granted Jul 26, 2011·57 cites·5 claims
- 2497US7893492B2Nanowire mesh device and method of fabricating sameIBM·Filed 2009·Granted Feb 22, 2011·76 cites·10 claims
- 2596US8778768B1Non-replacement gate nanomesh field effect transistor with epitixially grown source and drainIBM·Filed 2013·Granted Jul 15, 2014·89 cites·14 claims
- 2696US8216902B2Nanomesh SRAM cellCHANG JOSEPHINE·Filed 2009·Granted Jul 10, 2012·50 cites·5 claims
- 2796US8018007B2Selective floating body SRAM cellIBM·Filed 2009·Granted Sep 13, 2011·34 cites·13 claims
- 2895US10199554B2Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubitsIBM·Filed 2016·Granted Feb 5, 2019·8 cites·20 claims
- 2995US9209095B2III-V, Ge, or SiGe fin base lateral bipolar transistor structure and methodIBM·Filed 2014·Granted Dec 8, 2015·18 cites·18 claims
- 3095US9177814B2Suspended superconducting qubitsIBM·Filed 2013·Granted Nov 3, 2015·17 cites·5 claims
- 3195US8969965B2Fin-last replacement metal gate FinFETIBM·Filed 2014·Granted Mar 3, 2015·18 cites·6 claims
- 3295US8928083B2Diode structure and method for FINFET technologiesIBM·Filed 2013·Granted Jan 6, 2015·18 cites·10 claims
- 3395US8900959B2Non-replacement gate nanomesh field effect transistor with pad regionsIBM·Filed 2013·Granted Dec 2, 2014·18 cites·15 claims
- 3495US8816328B2Patterning contacts in carbon nanotube devicesCHANG JOSEPHINE B·Filed 2012·Granted Aug 26, 2014·13 cites·14 claims
- 3595US8709888B2Hybrid CMOS nanowire mesh device and PDSOI deviceCHANG JOSEPHINE B·Filed 2011·Granted Apr 29, 2014·23 cites·11 claims
- 3695US8673731B2Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 18, 2014·19 cites·19 claims
- 3795US8669167B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·19 cites·19 claims
- 3895US8586449B1Raised isolation structure self-aligned to fin structuresCHANG JOSEPHINE B·Filed 2012·Granted Nov 19, 2013·23 cites·22 claims
- 3995US8541774B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Sep 24, 2013·18 cites·12 claims
- 4095US8422273B2Nanowire mesh FET with multiple threshold voltagesCHANG JOSEPHINE·Filed 2009·Granted Apr 16, 2013·39 cites·9 claims
- 4195US8384065B2Gate-all-around nanowire field effect transistorsIBM·Filed 2009·Granted Feb 26, 2013·34 cites·35 claims
- 4295US8173993B2Gate-all-around nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted May 8, 2012·35 cites·27 claims
- 4394US10268968B2Josephson junctions for improved qubitsIBM·Filed 2017·Granted Apr 23, 2019·8 cites·11 claims
- 4494US9614270B2Superconducting airbridge crossover using superconducting sacrificial materialIBM·Filed 2015·Granted Apr 4, 2017·11 cites·1 claims
- 4594US9559284B2Silicided nanowires for nanobridge weak linksGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 31, 2017·8 cites·12 claims
- 4694US9536794B2Techniques for dual dielectric thickness for a nanowire CMOS technology using oxygen growthIBM·Filed 2015·Granted Jan 3, 2017·10 cites·20 claims
- 4794US9391163B2Stacked planar double-gate lamellar field-effect transistorIBM·Filed 2014·Granted Jul 12, 2016·11 cites·1 claims
- 4894US9362354B1Tuning gate lengths in semiconductor device structuresIBM·Filed 2015·Granted Jun 7, 2016·10 cites·15 claims
- 4994US8878298B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Nov 4, 2014·17 cites·16 claims
- 5094US8809957B2Nanowire FET and FinFET hybrid technologyIBM·Filed 2013·Granted Aug 19, 2014·14 cites·6 claims
Showing the top 50 of 284 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →