Inventor · disambiguated record
Joseph T. Hillman
Also filed as: HILLMAN JOSEPH · HILLMAN JOSEPH T · HILLMAN JOSEPH TODD
54 granted patents·12 pending applications·5,943 citations·filing 1983–2013
99Inventor score
Files withTOKYO ELECTRON LTD40SONY CORP9SUPERCRITICAL SYSTEMS INC3BROWN RICHARD2MATERIALS RESEARCH CORP2
Top patents by PatentIndex Score
66 records- 0198US6368987B1Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactionsTOKYO ELECTRON LTD·Filed 2000·Granted Apr 9, 2002·642 cites·11 claims
- 0298US6274496B1Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturingTOKYO ELECTRON LTD·Filed 2000·Granted Aug 14, 2001·391 cites·36 claims
- 0398US6183564B1Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing systemTOKYO ELECTRON LTD·Filed 1998·Granted Feb 6, 2001·502 cites·45 claims
- 0498US6161500AApparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactionsTOKYO ELECTRON LTD·Filed 1997·Granted Dec 19, 2000·814 cites·30 claims
- 0598US5567243AApparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactorSONY CORP·Filed 1995·Granted Oct 22, 1996·366 cites·5 claims
- 0698US5562947AMethod and apparatus for isolating a susceptor heating element from a chemical vapor deposition environmentSONY CORP·Filed 1994·Granted Oct 8, 1996·449 cites·38 claims
- 0798US5378501AMethod for chemical vapor deposition of titanium nitride films at low temperaturesFiled 1993·Granted Jan 3, 1995·322 cites·9 claims
- 0897US5997649AStacked showerhead assembly for delivering gases and RF power to a reaction chamberTOKYO ELECTRON LTD·Filed 1998·Granted Dec 7, 1999·224 cites·33 claims
- 0997US5926737AUse of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processingTOKYO ELECTRON LTD·Filed 1997·Granted Jul 20, 1999·213 cites·23 claims
- 1097US5628829AMethod and apparatus for low temperature deposition of CVD and PECVD filmsSONY CORP·Filed 1994·Granted May 13, 1997·270 cites·20 claims
- 1196US6586330B1Method for depositing conformal nitrified tantalum silicide films by thermal CVDTOKYO ELECTRON LTD·Filed 2002·Granted Jul 1, 2003·127 cites·55 claims
- 1295US5866213AMethod for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactorTOKYO ELECTRON LTD·Filed 1997·Granted Feb 2, 1999·140 cites·13 claims
- 1393US6455414B1Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayersTOKYO ELECTRON LTD·Filed 2000·Granted Sep 24, 2002·65 cites·26 claims
- 1493US5665640AMethod for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactorSONY CORP·Filed 1994·Granted Sep 9, 1997·128 cites·26 claims
- 1592US5834371AMethod and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereofTOKYO ELECTRON LTD·Filed 1997·Granted Nov 10, 1998·126 cites·17 claims
- 1691US6409837B1Processing system and method for chemical vapor deposition of a metal layer using a liquid precursorTOKYO ELECTRON LTD·Filed 1999·Granted Jun 25, 2002·97 cites·28 claims
- 1789US9354630B2Flexible laser manufacturing systems and associated methods of use and manufactureSUKHMAN YEFIM P·Filed 2011·Granted May 31, 2016·15 cites·26 claims
- 1889US5451258AApparatus and method for improved delivery of vaporized reactant gases to a reaction chamberMATERIALS RESEARCH CORP·Filed 1994·Granted Sep 19, 1995·83 cites·37 claims
- 1988US7521089B2Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambersTOKYO ELECTRON LTD·Filed 2002·Granted Apr 21, 2009·48 cites·10 claims
- 2087US6548112B1Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamberTOKYO ELECTRON LTD·Filed 1999·Granted Apr 15, 2003·76 cites·10 claims
- 2187US5975912ALow temperature plasma-enhanced formation of integrated circuitsMATERIALS RESEARCH CORP·Filed 1994·Granted Nov 2, 1999·53 cites·15 claims
- 2286US8603217B2Recirculating filtration systems for material processing systems and associated methods of use and manufactureSUKHMAN YEFIM P·Filed 2011·Granted Dec 10, 2013·8 cites·25 claims
- 2383US6093645AElimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridationTOKYO ELECTRON LTD·Filed 1997·Granted Jul 25, 2000·54 cites·32 claims
- 2481US5567483AProcess for plasma enhanced anneal of titanium nitrideSONY CORP·Filed 1995·Granted Oct 22, 1996·62 cites·9 claims
- 2580US6626186B1Method for stabilizing the internal surface of a PECVD process chamberTOKYO ELECTRON LTD·Filed 2000·Granted Sep 30, 2003·19 cites·5 claims
- 2680US6143128AApparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereofTOKYO ELECTRON LTD·Filed 1998·Granted Nov 7, 2000·53 cites·10 claims
- 2780US5593511AMethod of nitridization of titanium thin filmsSONY CORP·Filed 1995·Granted Jan 14, 1997·58 cites·10 claims
- 2878US6500761B1Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatmentTOKYO ELECTRON LTD·Filed 2001·Granted Dec 31, 2002·21 cites·22 claims
- 2977US5989652AMethod of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applicationsTOKYO ELECTRON LTD·Filed 1997·Granted Nov 23, 1999·38 cites·8 claims
- 3076US6482477B1Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers theretoTOKYO ELECTRON LTD·Filed 2000·Granted Nov 19, 2002·20 cites·17 claims
- 3175US5610106APlasma enhanced chemical vapor deposition of titanium nitride using ammoniaSONY CORP·Filed 1995·Granted Mar 11, 1997·48 cites·8 claims
- 3273US6220202B1Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor depositionTOKYO ELECTRON LTD·Filed 1998·Granted Apr 24, 2001·29 cites·6 claims
- 3373US5716870AMethod for producing titanium thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactorSONY CORP·Filed 1996·Granted Feb 10, 1998·29 cites·1 claims
- 3472US6508919B1Optimized liners for dual damascene metal wiringTOKYO ELECTRON LTD·Filed 2000·Granted Jan 21, 2003·19 cites·61 claims
- 3571US7442636B2Method of inhibiting copper corrosion during supercritical CO2 cleaningTOKYO ELECTRON LTD·Filed 2005·Granted Oct 28, 2008·3 cites·33 claims
- 3670US6471782B1Precursor deposition using ultrasonic nebulizerTOKYO ELECTRONIC LTD·Filed 1999·Granted Oct 29, 2002·40 cites·11 claims
- 3770US6037252AMethod of titanium nitride contact plug formationTOKYO ELECTRON LTD·Filed 1997·Granted Mar 14, 2000·35 cites·7 claims
- 3867US7250374B2System and method for processing a substrate using supercritical carbon dioxide processingTOKYO ELECTRON LTD·Filed 2004·Granted Jul 31, 2007·11 cites·24 claims
- 3967US6302057B1Apparatus and method for electrically isolating an electrode in a PECVD process chamberTOKYO ELECTRON LTD·Filed 1998·Granted Oct 16, 2001·34 cites·15 claims
- 4065US6140215AMethod and apparatus for low temperature deposition of CVD and PECVD filmsTOKYO ELECTRON LTD·Filed 1996·Granted Oct 31, 2000·23 cites·8 claims
- 4165US5972790AMethod for forming salicidesTOKYO ELECTRON LTD·Filed 1995·Granted Oct 26, 1999·24 cites·9 claims
- 4263US6635569B1Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatusTOKYO ELECTRON LTD·Filed 1998·Granted Oct 21, 2003·24 cites·29 claims
- 4360US6562708B1Method for incorporating silicon into CVD metal filmsTOKYO ELECTRON LTD·Filed 2000·Granted May 13, 2003·7 cites·24 claims
- 4460US5897380AMethod for isolating a susceptor heating element from a chemical vapor deposition environmentTOKYO ELECTRON LTD·Filed 1996·Granted Apr 27, 1999·19 cites·17 claims
- 4557US6121140AMethod of improving surface morphology and reducing resistivity of chemical vapor deposition-metal filmsTOKYO ELECTRON LTD·Filed 1997·Granted Sep 19, 2000·18 cites·17 claims
- 4656US6632737B1Method for enhancing the adhesion of a barrier layer to a dielectricTOKYO ELECTRON LTD·Filed 2000·Granted Oct 14, 2003·5 cites·86 claims
- 4756US4496180AVacuum handling apparatusCINCINNATI MILACRON IND INC·Filed 1983·Granted Jan 29, 1985·18 cites·7 claims
- 4855US2010000681A1Phase change based heating element system and methodSUPERCRITICAL SYSTEMS INC·Filed 2009·Application pending·0 cites
- 4954US6090705AMethod of eliminating edge effect in chemical vapor deposition of a metalTOKYO ELECTRON LTD·Filed 1998·Granted Jul 18, 2000·19 cites·34 claims
- 5054US4966869ATungsten disilicide CVDSPECTRUM CVD INC·Filed 1990·Granted Oct 30, 1990·28 cites·4 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →