Inventor · disambiguated record
John Macneil
Also filed as: MACNEIL JOHN · MACNEIL JOHN J
22 granted patents·8 pending applications·759 citations·filing 1999–2021
95Inventor score
Top patents by PatentIndex Score
30 records- 0192US7205246B2Forming low k dielectric layersAVIZA TECHNOLOGY LTD·Filed 2002·Granted Apr 17, 2007·518 cites·43 claims
- 0290US6640840B1Delivery of liquid precursors to semiconductor processing reactorsTRIKON HOLDINGS LTD·Filed 2000·Granted Nov 4, 2003·46 cites·4 claims
- 0389US6653247B2Dielectric layer for a semiconductor device and method of producing the sameTRIKON HOLDINGS LTD·Filed 2001·Granted Nov 25, 2003·41 cites·27 claims
- 0487US7210958B1Electrical contact crimp ear serrationETCO INC·Filed 2005·Granted May 1, 2007·36 cites·4 claims
- 0584US7198526B1Low-profile flag electrical terminal connector assemblyETCO INC·Filed 2005·Granted Apr 3, 2007·33 cites·8 claims
- 0684US6846757B2Dielectric layer for a semiconductor device and method of producing the sameTRIKON HOLDINGS LTD·Filed 2003·Granted Jan 25, 2005·26 cites·4 claims
- 0775US6627535B2Methods and apparatus for forming a film on a substrateTRIKON HOLDINGS LTD·Filed 2001·Granted Sep 30, 2003·30 cites·9 claims
- 0862US7140928B1Contact for an electrical connectorETCO INC·Filed 2006·Granted Nov 28, 2006·9 cites·8 claims
- 0960US7351669B2Method of forming a substantially closed voidAVIZA TECHNOLOGY LTD·Filed 2004·Granted Apr 1, 2008·9 cites·16 claims
- 1059US2011268891A1Gas delivery deviceSPP PROCESS TECHNOLOGY SYSTEMS UK LTD·Filed 2009·Application pending·0 cites
- 1158US11643744B2Apparatus for electrochemically processing semiconductor substratesSPTS TECHNOLOGIES LTD·Filed 2021·Granted May 9, 2023·0 cites·19 claims
- 1255US7279201B2Methods and apparatus for forming precursorsAVIZA EUROP LTD·Filed 2002·Granted Oct 9, 2007·2 cites·15 claims
- 1352US10385471B2Electrochemical deposition chamberSPTS TECHNOLOGIES LTD·Filed 2018·Granted Aug 20, 2019·0 cites·17 claims
- 1451US9903039B2Electrochemical deposition chamberPICOFLUIDICS LTD·Filed 2014·Granted Feb 27, 2018·0 cites·11 claims
- 1549US8728337B2Positive displacement pumping chamberSPTS TECHNOLOGIES LTD·Filed 2013·Granted May 20, 2014·0 cites·4 claims
- 1648US11066754B2Apparatus for electrochemically processing semiconductor substratesSPTS TECHNOLOGIES LTD·Filed 2018·Granted Jul 20, 2021·0 cites·14 claims
- 1747US11236433B2Apparatus and method for processing a substrateSPTS TECHNOLOGIES LTD·Filed 2020·Granted Feb 1, 2022·0 cites·17 claims
- 1847US2008245770A1Positive Displacement Pumping ChamberAVIZA TECHNOLOGY LTD·Filed 2006·Application pending·0 cites
- 1946US9945043B2Electro chemical deposition apparatusMACNEIL JOHN·Filed 2011·Granted Apr 17, 2018·0 cites·9 claims
- 2044US7309662B1Method and apparatus for forming a film on a substrateAVIZA EUROP LTD·Filed 2000·Granted Dec 18, 2007·3 cites·28 claims
- 2142US2004040505A1Delivery of liquid precursors to semiconductor processing reactorsFiled 2003·Application pending·0 cites
- 2241US2009104774A1Method of manufacturing a semiconductor deviceNXP BV·Filed 2006·Application pending·0 cites
- 2340US7732307B2Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)AVIZA TECHNOLOGY LTD·Filed 2005·Granted Jun 8, 2010·0 cites·17 claims
- 2440US2004056356A1Methods and apparatus for forming a film on a substrateFiled 2003·Application pending·0 cites
- 2539US2019382908A1Method of producing a structurePICOFLUIDICS LTD·Filed 2019·Application pending·0 cites
- 2636US2004115923A1Method of filling a via or recess in a semiconductor substrateFiled 2002·Application pending·0 cites
- 2735US8968535B2Ion beam sourceMACNEIL JOHN·Filed 2010·Granted Mar 3, 2015·0 cites·8 claims
- 2835US8403699B1Strain relief electrical cable connectorMACNEIL JOHN J·Filed 2011·Granted Mar 26, 2013·1 cites·9 claims
- 2930US2003157781A1Method of filling trenchesFiled 2002·Application pending·0 cites
- 3029US6256871B1Crimping apparatus for electrical connectorsMOLEX INC·Filed 1999·Granted Jul 10, 2001·5 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →